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Sergey Kafanov

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cond-mat.mes-hall cond-mat.supr-con physics.app-ph cond-mat.mtrl-sci cond-mat.str-el

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preprint2022arXiv

Optoelectrical nanomechanical resonators made from multilayered 2D materials

Studies involving nanomechanical motion have evolved from its detection and understanding of its fundamental aspects to its promising practical utility as an integral component of hybrid systems. Nanomechanical resonators' indispensable role as transducers between optical and microwave fields in hybrid systems, such as quantum communications interface, have elevated their importance in recent years. It is therefore crucial to determine which among the family of nanomechanical resonators is more suitable for this role. Most of the studies revolve around nanomechanical resonators of ultrathin structures because of their inherently large mechanical amplitude due to their very low mass. Here, we argue that the underutilized nanomechanical resonators made from multilayered two-dimensional (2D) materials are the better fit for this role because of their comparable electrostatic tunability and larger optomechanical responsivity. To show this, we first demonstrate the electrostatic tunability of mechanical modes of a multilayered nanomechanical resonator made from graphite. We also show that the optomechanical responsivity of multilayered devices will always be superior as compared to the few-layer devices. Finally, by using the multilayered model and comparing this device with the reported ones, we find that the electrostatic tunability of devices of intermediate thickness is not significantly lower than that of ultrathin ones. Together with the practicality in terms of fabrication ease and design predictability, we contend that multilayered 2D nanomechanical resonators are the optimal choice for the electromagnetic interface in integrated quantum systems.

preprint2020arXiv

Observing off-resonance motion of nanomechanical resonators as modal superposition

Observation of resonance modes is the most straightforward way of studying mechanical oscillations because these modes have maximum response to stimuli. However, a deeper understanding of mechanical motion could be obtained by also looking at modal responses at frequencies in between resonances. A common way to do this is to force a mechanical object into oscillations and study its off-resonance behaviour. In this paper, we present visualisation of the modal response shapes for a mechanical drum driven off resonance. By using the frequency modal analysis, we describe these shapes as a superposition of resonance modes. We find that the spatial distribution of the oscillating component of the driving force affects the modal weight or participation. Moreover, we are able to infer the asymmetry of the drum by studying the dependence of the resonance modes shapes on the frequency of the driving force. Our results highlight that dynamic responses of any mechanical system are mixtures of their resonance modes with various modal weights, further giving credence to the universality of this phenomenon.

preprint2015arXiv

A planar Al-Si Schottky Barrier MOSFET operated at cryogenic temperatures

Schottky Barrier (SB)-MOSFET technology offers intriguing possibilities for cryogenic nano-scale devices, such as Si quantum devices and superconducting devices. We present experimental results on a novel device architecture where the gate electrode is self-aligned with the device channel and overlaps the source and drain electrodes. This facilitates a sub-5 nm gap between the source/drain and channel, and no spacers are required. At cryogenic temperatures, such devices function as p-MOS Tunnel FETs, as determined by the Schottky barrier at the Al-Si interface, and as a further advantage, fabrication processes are compatible with both CMOS and superconducting logic technology.

preprint2009arXiv

Periodicity in Al/Ti superconducting single electron transistors

We present experiments on single Cooper-pair transistors made of two different superconducting materials. We chose Ti and Al to create an energy gap profile such that the island has a higher gap than the leads, thereby acting as a barrier to quasiparticle tunneling. Our transport measurements demonstrate that quasiparticle poisoning is suppressed in all our TiAlTi structures (higher gap for the island) with clear 2e periodicity observed, whereas full quasiparticle poisoning is observed in all AlTiAl devices (higher gap for the leads) with e periodicity.

preprint2008arXiv

Measurement of the shot noise in a single electron transistor

We have systematically measured the shot noise in a single electron transistor (SET) as a function of bias and gate voltages. By embedding a SET in a resonance circuit we have been able to measure its shot noise at the resonance frequency 464 MHz, where the 1/f noise is negligible. We can extract the Fano factor which varies between 0.5 and 1 depending on the amount of Coulomb blockade in the SET, in very good agreement with the theory.

preprint2006arXiv

An ultra sensitive radio frequency single electron transistor working up to 4.2 K

We present the fabrication and measurement of a radio frequency single electron transistor (rf-SET), that displays a very high charge sensitivity of 1.9 microlectrons/sqrt(Hz) at 4.2 K. At 40 mK, the charge sensitivity is 0.9 and 1.0 microlectrons/sqrt(Hz) in the superconducting and normal state respectively. The sensitivity was measured as a function of radio frequency amplitude at three different temperatures: 40 mK, 1.8 K and 4.2 K.