Source author record

Sergej Schuwalow

Sergej Schuwalow appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

cond-mat.mtrl-sci cond-mat.str-el physics.comp-ph physics.ins-det quant-ph

Catalog footprint

What is connected

4works

5topics

4close collaborators

Actions

Connect this record

Open graph Browse works

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

preprint2020arXiv

Electronic structure of InAs and InSb surfaces: density functional theory and angle-resolved photoemission spectroscopy

The electronic structure of surfaces plays a key role in the properties of quantum devices. However, surfaces are also the most challenging to simulate and engineer. Here, we study the electronic structure of InAs(001), InAs(111), and InSb(110) surfaces using a combination of density functional theory (DFT) and angle-resolved photoemission spectroscopy (ARPES). We were able to perform large-scale first principles simulations and capture effects of different surface reconstructions by using DFT calculations with a machine-learned Hubbard U correction [npj Comput. Mater. 6, 180 (2020)]. To facilitate direct comparison with ARPES results, we implemented a "bulk unfolding" scheme by projecting the calculated band structure of a supercell surface slab model onto the bulk primitive cell. For all three surfaces, we find a good agreement between DFT calculations and ARPES. For InAs(001), the simulations clarify the effect of the surface reconstruction. Different reconstructions are found to produce distinctive surface states. For InAs(111) and InSb(110), the simulations help elucidate the effect of oxidation. Owing to larger charge transfer from As to O than from Sb to O, oxidation of InAs(111) leads to significant band bending and produces an electron pocket, whereas oxidation of InSb(110) does not. Our combined theoretical and experimental results may inform the design of quantum devices based on InAs and InSb semiconductors, e.g., topological qubits utilizing the Majorana zero modes.

preprint2012arXiv

Charge losses in segmented silicon sensors at the Si-SiO2 interface

Using multi-channel time-resolved current measurements (multi TCT), the charge collection of p+n silicon strip sensors for electron-hole pairs produced close to the Si-SiO2 interface by a focussed sub-nanosecond laser with a wavelength of 660 nm has been studied. Sensors before and after irradiation with 1 MGy of X-rays have been investigated. The charge signals induced in the readout strips and the rear electrode as a function of the position of the light spot are described by a model which allows a quantitative determination of the charge losses and of the widths of the electron-accumulation and hole-inversion layers close to the Si-SiO2 interface. Depending on the applied bias voltage, biasing history and environmental conditions, like humidity, incomplete electron or hole collection and different widths of the accumulation layers are observed. In addition, the results depend on the time after biasing the sensor, with time constants which can be as long as days. The observations are qualitatively explained with the help of detailed sensor simulations. Finally, their relevance for the detection of X-ray photons and charged particles, and for the stable operation of segmented p+n silicon sensors is discussed.

preprint2012arXiv

Impact of the Dzyaloshinskii-Moriya interaction in strongly correlated itinerant systems

Spin-only approaches to anisotropic effects in strongly interacting materials are often insufficient for systems close to the Mott regime. Within a model context, here the consequences of the low-symmetry relevant Dzyaloshinskii-Moriya (DM) interaction are studied for strongly correlated, but overall itinerant, systems. Namely, we investigate the Hubbard bilayer model supplemented by a DM term at half filling and in the hole-doped regime. As an add-on, further results for the two- impurity Anderson model with DM interaction are also provided. The model Hamiltonians are treated by means of the rotational invariant slave boson technique at saddle point within a (cellular) cluster approach. Already small values of the anisotropic interaction prove to have a strong influence on the phases and correlation functions with increasing U. An intriguing metallic spin-flop phase is found in the doped bilayer model and a reduction of the RKKY exchange in the two-impurity model.

preprint2010arXiv

Realistic modeling of the electronic structure and the effect of correlations for Sn/Si(111) and Sn/Ge(111) surfaces

The correlated electronic structure of the submonolayer surface systems Sn/Si(111) and Sn/Ge(111) is investigated by density-functional theory (DFT) and its combination with explicit many-body methods. Namely, the dynamical mean-field theory and the slave-boson mean-field theory are utilized for the study of the intriguing interplay between structure, bonding and electronic correlation. In this respect, explicit low-energy one- and four($sp^2$-like)-band models are derived using maximally-localized Wannier(-like) functions. In view of the possible low-dimensional magnetism in the Sn submonolayers we compare different types of magnetic orders and indeed find a 120$^\circ$ antiferromagnetic ordering to be stable in the ground state. With single-site methods and cellular-cluster extensions the influence of a finite Hubbard $U$ on the surface states in a planar and a reconstructed structural geometry is furthermore elaborated.