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Seongjin Ahn

Seongjin Ahn appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallquant-ph

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Published work

8 published item(s)

preprint2022arXiv

Density-dependent two-dimensional optimal mobility in ultra-high-quality semiconductor quantum wells

We calculate using the Boltzmann transport theory the density dependent mobility of two-dimensional (2D) electrons in GaAs, SiGe and AlAs quantum wells as well as of 2D holes in GaAs quantum wells. The goal is to precisely understand the recently reported breakthrough in achieving a record 2D mobility for electrons confined in a GaAs quantum well. Comparing our theory with the experimentally reported electron mobility in GaAs quantum wells, we conclude that the mobility is limited by unintentional background random charged impurities at an unprecedented low concentration of $\sim10^{13} \mathrm{cm}^{-3}$. We find that this same low level of background disorder should lead to 2D GaAs hole and 2D AlAs electron mobilities of $\sim10^7 \mathrm{cm}^2/Vs$ and $\sim4\times10^7 \mathrm{cm}^2/Vs$, respectively, which are much higher theoretical limits than the currently achieved experimental values in these systems. We therefore conclude that the current GaAs hole and AlAs electron systems are much dirtier than the state of the arts 2D GaAs electron systems. We present theoretical results for 2D mobility as a function of density, effective mass, quantum well width, and valley degeneracy, comparing with experimental data.

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preprint2022arXiv

Disorder induced 2D metal-insulator transition in moiré transition metal dichalcogenide multilayers

We develop a minimal theory for the recently observed metal-insulator transition (MIT) in two-dimensional (2D) moiré multilayer transition metal dichalcogenides (mTMD) using Coulomb disorder in the environment as the underlying mechanism. In particular, carrier scattering by random charged impurities leads to an effective 2D MIT approximately controlled by the Ioffe-Regel criterion, which is qualitatively consistent with the experiments. We find the necessary disorder to be around $5$-$10\times10^{10}$cm$^{-2}$ random charged impurities in order to quantitatively explain much, but not all, of the observed MIT phenomenology as reported by two different experimental groups. Our estimate is consistent with the known disorder content in TMDs.

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preprint2021arXiv

Anisotropic Fermionic Quasiparticles

We have carried out a comprehensive investigation of the quasiparticle properties of a two-dimensional electron gas, interacting via the long-range Coulomb interaction, in the presence of bare mass anisotropy (i.e. with an elliptic noninteracting Fermi surface) by calculating the self-energy, the spectral function, the scattering rate, and the effective mass within the leading order dynamical self-energy approximation. We find novel anisotropic features of quasiparticle properties that are not captured by the isotropic approximation where the anisotropic effective mass is replaced by the isotropic averaged density-of-states mass. Some of these interesting results are: (1) the renormalization of the quasiparticle spectrum becomes highly anisotropic as the quasiparticle energy increases away from the Fermi energy; (2) the inelastic scattering rate features a strong anisotropy, exhibiting an abrupt jump at different injected energies depending on the momentum direction of the injected electron; (3) the effective mass anisotropy is reduced by interactions. Our results and analysis show that the unjustified neglect of the mass anisotropy can lead to an incorrect description of quasiparticle properties of the anisotropic system although the use of an equivalent isotropic approximation using the density-of-states effective mass works as a reasonable approximation in many situations. We also provide a theory using the plasmon-pole approximation, commenting on its validity for anisotropic self-energy calculations. We comment also on the interaction effect on the Fermi surface topology, finding that the elliptic shape of the bare Fermi surface is preserved, with suppressed ellipticity, in the interacting system to a high degree of accuracy. Our theory provides a complete generalization of the existing isotropic many-body theory of interacting electrons to the corresponding anisotropic systems.

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preprint2021arXiv

Microscopic bath effects on noise spectra in semiconductor quantum dot qubits

When a system is thermally coupled to only a small part of a larger bath, statistical fluctuations of the temperature (more precisely, the internal energy) of this "sub-bath" around the mean temperature defined by the larger bath can become significant. We show that these temperature fluctuations generally give rise to 1/f-like noise power spectral density from even a single two-level system. We extend these results to a distribution of fluctuators, finding the corresponding modification to the Dutta-Horn relation. Then we consider the specific situation of charge noise in silicon quantum dot qubits and show that recent experimental data [E. J. Connors, et al., Phys. Rev. B 100, 165305 (2019)] can be modeled as arising from as few as two two-level fluctuators, and accounting for sub-bath size improves the quality of the fit.

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preprint2021arXiv

Theroy of anisotropic plasmons

We develop the complete theory for the collective plasmon modes of an interacting electron system in the presence of explicit mass (or velocity) anisotropy in the corresponding non-interacting situation, with the effective Fermi velocity being different along different axes. Such effective mass anisotropy is common in solid state materials (e.g., silicon or germanium), where the Fermi surface is often not spherical. We find that the plasmon dispersion itself develops significant anisotropy in such systems, and the commonly used isotropic approximation of using a density of states or optical effective mass does not work for the anisotropic system. We predict a qualitatively new phenomenon in anisotropic systems with no corresponding isotropic analog, where the plasmon mode along one direction decays into electron-hole pairs through Landau damping while the mode remains undamped and stable along a different directions

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preprint2021arXiv

Valley polarization transition in a two-dimensional electron gas

We theoretically study transport signatures associated with a spontaneous 2-valley to 1-valley quantum phase transition in a two-dimensional electron gas (2DEG) tuned by decreasing the 2D carrier density, as claimed in a recent experiment [Phys. Rev. Lett. 127, 116601 (2021)]. The key issue we focus on is whether the experimentally measured 2D resistivity as a function of carrier density is consistent (or not) with an underlying spontaneous valley-polarization transition as assumed uncritically in the experimental report. Our theoretical analysis is particularly germane since the experiment does not directly measure the change in the Fermi surface resulting from the valley polarization transition, but infers such a transition indirectly through transport measurements. We validate the experimental claim, showing that indeed the observed sudden change in the 2D resistivity is quantitatively consistent with a sudden change in the valley polarization from 2 to 1 at the critical density.

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preprint2016arXiv

Collective modes in multi-Weyl semimetals

We investigate collective modes in three dimensional (3D) gapless multi-Weyl semimetals with anisotropic energy band dispersions (i.e., $E\sim \sqrt{ k_{\parallel}^{2J} + k_z^2}$, where $k_{\parallel}$ and $k_z$ are wave vectors and $J$ is a positive integer). For comparison, we also consider the gapless semimetals with the isotropic band dispersions (i.e., $E\sim k^J$). We calculate analytically long-wavelength plasma frequencies incorporating interband transitions and chiral properties of carriers. For both the isotropic and anisotropic cases, we find that interband transitions and chirality lead to the depolarization shift of plasma frequencies. For the isotropic parabolic band dispersion (i.e., $N=2$, $E\sim k^2$), the long-wavelength plasma frequencies lie outside the single particle excitation regions for all carrier densities, and thus the plasmons do not decay via Landau damping. For the higher-order band dispersions ($N \ge 3$) the long-wavelength plasmons experience damping below a critical density. For systems with the anisotropic dispersion the density dependence of the long-wavelength plasma frequency along the direction of non-linear dispersion behaves like that of the isotropic linear band model ($N=1$), while along the direction of linear dispersion it behaves like that of the isotropic non-linear model ($N \ge 2$). Plasmons along both directions remain undamped over a broad range of densities due to the chirality induced depolarization shift. Our results provide a comprehensive picture of how band dispersion and chirality affect plasmon behaviors in 3D gapless chiral systems with the arbitrary band dispersion.

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preprint2014arXiv

Inelastic carrier lifetime in a coupled graphene electron-phonon system: Role of plasmon-phonon coupling

We calculate the inelastic scattering rates and the hot electron inelastic mean free paths for both monolayer and bilayer graphene on a polar substrate. We study the quasiparticle self-energy by taking into account both electron-electron and electron-surface optical (SO) phonon interactions. In this calculation the leading order dynamic screening approximation (G$_0$W approximation) is used to obtain the quasiparticle self-energy by treating electrons and phonons on an equal footing. We find that the strong coupling between the SO phonon and plasmon leads to a new decay channel for the quasiparticle through the emission of the coupled mode, and gives rise to an abrupt increase in the scattering rate, which is absent in the uncoupled system. In monolayer graphene a single jump in the scattering rate occurs, arising from the emission of the low energy branch of the coupled plasmon-phonon modes. In bilayer graphene the emission of both low and high energy branches of the coupled modes contributes to the scattering rate and gives rise to two abrupt changes in the scattering rate. The jumps in the scattering rate can be potentially used in the hot electron device such as switching devices and oscillators.

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