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Sefaattin Tongay

Sefaattin Tongay appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-elphysics.opticscond-mat.quant-gasquant-ph

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Published work

25 published item(s)

preprint2022arXiv

Brightening of a dark monolayer semiconductor via strong light-matter coupling in a cavity

Engineering the properties of quantum materials via strong light-matter coupling is a compelling research direction with a multiplicity of modern applications. Those range from modifying charge transport in organic molecules, steering particle correlation and interactions, and even controlling chemical reactions. Here, we study the modification of the material properties via strong coupling and demonstrate an effective inversion of the excitonic band-ordering in a monolayer of WSe2 with spin-forbidden, optically dark ground state. In our experiments, we harness the strong light-matter coupling between cavity photon and the high energy, spin-allowed bright exciton, and thus creating two bright polaritonic modes in the optical bandgap with the lower polariton mode pushed below the WSe2 dark state. We demonstrate that in this regime the commonly observed luminescence quenching stemming from the fast relaxation to the dark ground state is prevented, which results in the brightening of this intrinsically dark material. We probe this effective brightening by temperature-dependent photoluminescence, and we find an excellent agreement with a theoretical model accounting for the inversion of the band ordering and phonon-assisted polariton relaxation.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Charge transfer dynamics in MoSe$_{2}$/hBN/WSe$_{2}$ heterostructures

Ultrafast charge transfer processes provide a facile way to create interlayer excitons in directly contacted transition metal dichalcogenide (TMD) layers. More sophisticated heterostructures composed of TMD/hBN/TMD enable new ways to control interlayer exciton properties and achieve novel exciton phenomena, such as exciton insulators and condensates, where longer lifetimes are desired. In this work, we experimentally study the charge transfer dynamics in a heterostructure composed of a 1 nm thick hBN spacer between MoSe$_{2}$ and WSe$_{2}$ monolayers. We observe the hole transfer from MoSe$_{2}$ to WSe$_{2}$ through the hBN barrier with a time constant of 500 ps, which is over 3 orders of magnitude slower than that between TMD layers without a spacer. Furthermore, we observe strong competition between the interlayer charge transfer and intralayer exciton-exciton annihilation processes at high excitation densities. Our work opens possibilities to understand charge transfer pathways in TMD/hBN/TMD heterostructures for the efficient generation and control of interlayer excitons.

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preprint2022arXiv

Hysteresis-Free High Mobility Graphene Encapsulated in Tungsten Disulfide

High mobility is a crucial requirement for a large variety of electronic device applications. The state-of-the-art for high quality graphene devices is based on heterostructures made with graphene encapsulated in $>80\,$nm-thick flakes of hexagonal boron nitride (hBN). Unfortunately, scaling up multilayer hBN while precisely controlling the number of layers remains an elusive challenge, resulting in a rough material unable to enhance the mobility of graphene. This leads to the pursuit of alternative, scalable materials, which can be simultaneously used as substrate and encapsulant for graphene. Tungsten disulfide (WS$_2$) is a transition metal dichalcogenide, which was successfully grown in large ($\sim$mm-size) multi-layers by chemical vapour deposition. However, the resistance \textit{vs} gate voltage characteristics when gating graphene through WS$_2$ exhibit largely hysteretic shifts of the charge neutrality point (CNP) in the order of $Δn\sim$2.6$\cdot$10$^{11}$ cm$^{-2}$, hindering the use of WS$_2$ as a reliable encapsulant. The hysteresis originates due to the charge traps from sulfur vacancies present in WS$_2$. In this work, we report for the first time the use of WS$_2$ as a substrate and the overcoming of hysteresis issues by chemically treating WS$_2$ with a super-acid, which passivates these vacancies and strips the surface from contaminants. The hysteresis is significantly reduced below the noise level by at least a factor five (to $Δn<$5$\cdot$10$^{10}$ cm$^{-2}$) and, simultaneously, the room-temperature mobility of WS$_2$-encapsulated graphene is as high as $\sim$6.2$\cdot$10$^{4}$ cm$^{-2}$V$^{-1}$s$^{-1}$ at a carrier density $n$ $\sim$1$\cdot$ 10$^{12}$ cm$^{-2}$. Our results promote WS$_2$ to a valid alternative to hBN as encapsulant for high-performance graphene devices.

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preprint2022arXiv

Mapping the dispersion of the occupied and unoccupied band structure in photoexcited 1T-TiSe$_2$

Charge density waves (CDW) are states of broken symmetry with a periodic modulation of charge and lattice typically leading to the opening of a gap in the band structure. In the model CDW system 1T-TiSe$_2$ such a gap opens up between its Se$_{4p}$ valence and Ti$_{3d}$ conduction band, accompanied by a change of dispersion. These changes are crucial in understanding the CDW phase, as they provide a measure of the Se$_{4p}$-Ti$_{3d}$ hybridization strength and characteristic mechanistic features. Using time- and angle-resolved photoelectron spectroscopy (trARPES), the unoccupied band structure is populated with near-infrared (NIR) pump pulses which allows to to directly visualize the parabolically-shaped Ti$_{3d}$ conduction band. Furthermore, we observe a transient change of effective mass in the Se$_{4p}$ valence band following photoexcitation. This occurs alongside an overall reduction due to weakening of the CDW phase and is accompanied by an oscillating component with the frequency of the characteristic A$_{1g}$ phonon. These observations, enabled by trAPRES, highlight the importance of the lattice contributions in establishing the CDW order in 1T-TiSe$_2$.

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preprint2022arXiv

Nature of novel moiré exciton states in WSe$_2$/WS$_2$ heterobilayers

Moiré patterns of transition metal dichalcogenide (TMD) heterobilayers have proven to be an ideal platform to host unusual correlated electronic phases, emerging magnetism, and correlated exciton physics. While the existence of novel moiré excitonic states is established through optical measurements, the microscopic nature of these states is still poorly understood, often relying on empirically fit models. Here, combining large-scale first-principles GW-BSE calculations and micro-reflection spectroscopy, we identify the nature of the exciton resonances in WSe$_2$/WS$_2$ moiré superlattices, discovering a surprisingly rich set of moiré excitons that cannot be even qualitatively captured by prevailing continuum models. Our calculations reveal moiré excitons with distinct characters, including modulated Wannier excitons and previously unindentified intralayer charge-transfer excitons. Signatures of these distinct excitonic characters are confirmed experimentally via the unique carrier-density and magnetic-field dependences of different moiré exciton resonances. Our study highlights the highly non-trivial exciton states that can emerge in TMD moiré superlattices, and suggests novel ways of tuning many-body physics in moiré systems by engineering excited-states with specific spatial characters.

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preprint2022arXiv

Revealing the order parameter dynamics of 1T-TiSe$_2$ following optical excitation

The formation of a charge density wave state is characterized by an order parameter. The way it is established provides unique information on both the role that correlation plays in driving the charge density wave formation and the mechanism behind its formation. Here we use time and angle resolved photoelectron spectroscopy to optically perturb the charge-density phase in 1T-TiSe$_2$ and follow the recovery of its order parameter as a function of energy, momentum and excitation density. Our results reveal that two distinct orders contribute to the gap formation, a CDW order and pseudogap-like order, manifested by an overall robustness to optical excitation. A detailed analysis of the magnitude of the the gap as a function of excitation density and delay time reveals the excitonic long-range nature of the CDW gap and the short-range Jahn-Teller character of the pseudogap order. In contrast to the gap, the intensity of the folded Se$_{4p}$* band can only give access to the excitonic order. These results provide new information into the the long standing debate on the origin of the gap in TiSe$_2$ and place it in the same context of other quantum materials where a pseudogap phase appears to be a precursor of long-range order.

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preprint2022arXiv

Skyrmion formation in Ni-based Janus dihalide monolayers: Interplay between magnetic frustration and Dzyaloshinskii-Moriya interaction

We present a comprehensive theory of the magnetic phases in monolayer nickel-based Janus dihalides (NiIBr, NiICl, NiBrCl) through a combination of first-principles calculations and atomistic simulations. Phonon band structure calculations and finite temperature molecular dynamics simulations show that Ni-dihalide Janus monolayers are stable. The parameters of the interacting spin Hamiltonian extracted from ab initio calculations show that nickel-dihalide Janus monolayers exhibit varying degrees of magnetic frustration together with a large Dzyaloshinskii-Moriya interaction due to their inherent inversion symmetry breaking. The atomistic simulations reveal a delicate interplay between these two competing magnetic interactions in giving rise to skyrmion formation.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Strong Effects of Interlayer Interaction on Valence-Band Splitting in Transition Metal Dichalcogenides

Understanding the origin of valence band maxima (VBM) splitting in transition metal dichalcogenides (TMDs) is important because it governs the unique spin and valley physics in monolayer and multilayer TMDs. In this work, we present our systematic study of VBM splitting ($Δ$) in atomically thin MoS$_2$ and WS$_2$ by employing photocurrent spectroscopy as we change the temperature and the layer numbers. We found that VBM splitting in monolayer MoS$_2$ and WS$_2$ depends strongly on temperature, which contradicts the theory that spin-orbit coupling solely determines the VBM splitting in monolayer TMDs. We also found that the rate of change of VBM splitting with respect to temperature ($m=\frac{\partialΔ}{\partial T}$) is the highest for monolayer (-0.14 meV/K for MoS$_2$) and the rate decreases as the layer number increases ($m ~ 0$ meV/K for 5 layers MoS$_2$). We performed density functional theory (DFT) and the GW with Bethe-Salpeter Equation (GW-BSE) calculations to determine the electronic band structure and optical absorption for a bilayer MoS$_2$ with different interlayer separations. Our simulations agree with the experimental observations and demonstrate that the temperature dependence of VBM splitting in atomically thin monolayer and multilayer TMDs originates from the changes in the interlayer coupling strength between the neighboring layers. By studying two different types of TMDs and many different layer thicknesses, we also demonstrate that VBM splitting also depends on the layer numbers and type of transition metals. Our study will help understand the role spin-orbit coupling and interlayer interaction play in determining the VBM splitting in quantum materials and develop next-generation devices based on spin-orbit interactions.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Correlated interlayer exciton insulator in double layers of monolayer WSe2 and moiré WS2/WSe2

Moiré superlattices in van der Waals heterostructures have emerged as a powerful tool for engineering novel quantum phenomena. Here we report the observation of a correlated interlayer exciton insulator in a double-layer heterostructure composed of a WSe2 monolayer and a WS2/WSe2 moiré bilayer that are separated by an ultrathin hexagonal boron nitride (hBN). The moiré WS2/WSe2 bilayer features a Mott insulator state at hole density p/p0 = 1, where p0 corresponds to one hole per moiré lattice site. When electrons are added to the Mott insulator in the WS2/WSe2 moiré bilayer and an equal number of holes are injected into the WSe2 monolayer, a new interlayer exciton insulator emerges with the holes in the WSe2 monolayer and the electrons in the doped Mott insulator bound together through interlayer Coulomb interactions. The excitonic insulator is stable up to a critical hole density of ~ 0.5p0 in the WSe2 monolayer, beyond which the system becomes metallic. Our study highlights the opportunities for realizing novel quantum phases in double-layer moiré systems due to the interplay between the moiré flat band and strong interlayer electron interactions.

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preprint2021arXiv

Raman spectrum of Janus transition metal dichalcogenide monolayers WSSe and MoSSe

Janus transition metal dichalcogenides (TMDs) lose the horizontal mirror symmetry of ordinary TMDs, leading to the emergence of additional features, such as native piezoelectricity, Rashba effect, and enhanced catalytic activity. While Raman spectroscopy is an essential nondestructive, phase- and composition-sensitive tool to monitor the synthesis of materials, a comprehensive study of the Raman spectrum of Janus monolayers is still missing. Here, we discuss the Raman spectra of WSSe and MoSSe measured at room and cryogenic temperatures, near and off resonance. By combining polarization-resolved Raman data with calculations of the phonon dispersion and using symmetry considerations, we identify the four first-order Raman modes and higher-order two-phonon modes. Moreover, we observe defect-activated phonon processes, which provide a route toward a quantitative assessment of the defect concentration and, thus, the crystal quality of the materials synthesized. Our work establishes a solid background for future research on material synthesis, study, and application of Janus TMD monolayers.

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preprint2020arXiv

Confinement of long-lived interlayer excitons in WS$_2$/WSe$_2$ heterostructures

Interlayer excitons in layered materials constitute a novel platform to study many-body phenomena arising from long-range interactions between quantum particles. The ability to localise individual interlayer excitons in potential energy traps is a key step towards simulating Hubbard physics in artificial lattices. Here, we demonstrate spatial localisation of long-lived interlayer excitons in a strongly confining trap array using a WS$_{2}$/WSe$_{2}$ heterostructure on a nanopatterned substrate. We detect long-lived interlayer excitons with lifetime approaching 0.2 ms and show that their confinement results in a reduced lifetime in the microsecond range and stronger emission rate with sustained optical selection rules. The combination of a permanent dipole moment, spatial confinement and long lifetime places interlayer excitons in a regime that satisfies one of the requirements for observing long-range dynamics in an optically resolvable trap lattice.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Dipolar and magnetic properties of strongly absorbing hybrid interlayer excitons in pristine bilayer MoS$_2$

Van der Waals heterostructures composed of transition metal dichalcogenide monolayers (TMDs) are characterized by their truly rich excitonic properties which are determined by their structural, geometric and electronic properties: In contrast to pure monolayers, electrons and holes can be hosted in different materials, resulting in highly tunable dipolar manyparticle complexes. However, for genuine spatially indirect excitons, the dipolar nature is usually accompanied by a notable quenching of the exciton oscillator strength. Via electric and magnetic field dependent measurements, we demonstrate, that a slightly biased pristine bilayer MoS$_2$ hosts strongly dipolar excitons, which preserve a strong oscillator strength. We scrutinize their giant dipole moment, and shed further light on their orbital- and valley physics via bias-dependent magnetic field measurements.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Manipulation of room-temperature Valley-Coherent Exciton-Polaritons in atomically thin crystals by real and artificial magnetic fields

Strong spin-orbit coupling and inversion symmetry breaking in transition metal dichalcogenide monolayers yield the intriguing effects of valley-dependent optical selection rules. As such, it is possible to substantially polarize valley excitons with chiral light and furthermore create coherent superpositions of K and K- polarized states. Yet, at ambient conditions dephasing usually becomes too dominant, and valley coherence typically is not observable. Here, we demonstrate that valley coherence is, however, clearly observable for a single monolayer of WSe2, if it is strongly coupled to the optical mode of a high quality factor microcavity. The azimuthal vector, representing the phase of the valley coherent superposition, can be directly manipulated by applying magnetic fields, and furthermore, it sensibly reacts to the polarization anisotropy of the cavity which represents an artificial magnetic field. Our results are in qualitative and quantitative agreement with our model based on pseudospin rate equations, accounting for both effects of real and pseudo-magnetic fields.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Giant Valley-Zeeman Splitting from Spin-Singlet and Spin-Triplet Interlayer Excitons in WSe2/MoSe2 Heterostructure

Transition metal dichalcogenides (TMDCs) heterostructure with a type II alignment hosts unique interlayer excitons with the possibility of spin-triplet and spin-singlet states. However, the associated spectroscopy signatures remain elusive, strongly hindering the understanding of the Moire potential modulation of the interlayer exciton. In this work, we unambiguously identify the spin-singlet and spin-triplet interlayer excitons in the WSe2/MoSe2 hetero-bilayer with a 60-degree twist angle through the gate- and magnetic field-dependent photoluminescence spectroscopy. Both the singlet and triplet interlayer excitons show giant valley-Zeeman splitting between the K and K' valleys, a result of the large Lande g-factor of the singlet interlayer exciton and triplet interlayer exciton, which are experimentally determined to be ~ 10.7 and ~ 15.2, respectively, in good agreement with theoretical expectation. The PL from the singlet and triplet interlayer excitons show opposite helicities, determined by the atomic registry. Helicity-resolved photoluminescence excitation (PLE) spectroscopy study shows that both singlet and triplet interlayer excitons are highly valley-polarized at the resonant excitation, with the valley polarization of the singlet interlayer exciton approaches unity at ~ 20 K. The highly valley-polarized singlet and triplet interlayer excitons with giant valley-Zeeman splitting inspire future applications in spintronics and valleytronics.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Near-unity light absorption in a monolayer WS2 van der Waals heterostructure cavity

Excitons in monolayer transition-metal-dichalcogenides (TMDs) dominate their optical response and exhibit strong light-matter interactions with lifetime-limited emission. While various approaches have been applied to enhance light-exciton interactions in TMDs, the achieved strength have been far below unity, and a complete picture of its underlying physical mechanisms and fundamental limits has not been provided. Here, we introduce a TMD-based van der Waals heterostructure cavity that provides near-unity excitonic absorption, and emission of excitonic complexes that are observed at ultra-low excitation powers. Our results are in full agreement with a quantum theoretical framework introduced to describe the light-exciton-cavity interaction. We find that the subtle interplay between the radiative, non-radiative and dephasing decay rates plays a crucial role, and unveil a universal absorption law for excitons in 2D systems. This enhanced light-exciton interaction provides a platform for studying excitonic phase-transitions and quantum nonlinearities and enables new possibilities for 2D semiconductor-based optoelectronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Optical detection of Mott and generalized Wigner crystal states in WSe2/WS2 moiré superlattices

Moiré superlattices are emerging as a new route for engineering strongly correlated electronic states in two-dimensional van der Waals heterostructures, as recently demonstrated in the correlated insulating and superconducting states in magic-angle twisted bilayer graphene and ABC trilayer graphene/boron nitride moiré superlattices. Transition metal dichalcogenide (TMDC) moiré heterostructures provide another exciting model system to explore correlated quantum phenomena, with the addition of strong light-matter interactions and large spin-orbital coupling. Here we report the optical detection of strongly correlated phases in semiconducting WSe2/WS2 moiré superlattices. Our sensitive optical detection technique reveals a Mott insulator state at one hole per superlattice site (ν = 1), and surprising insulating phases at fractional filling factors ν = 1/3 and 2/3, which we assign to generalized Wigner crystallization on an underlying lattice. Furthermore, the unique spin-valley optical selection rules of TMDC heterostructures allow us to optically create and investigate low-energy spin excited states in the Mott insulator. We reveal an especially slow spin relaxation lifetime of many microseconds in the Mott insulating state, orders-of-magnitude longer than that of charge excitations. Our studies highlight novel correlated physics that can emerge in moiré superlattices beyond graphene.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Resolving spin, valley, and moiré quasi-angular momentum of interlayer excitons in WSe2/WS2 heterostructures

Moiré superlattices provide a powerful way to engineer properties of electrons and excitons in two-dimensional van der Waals heterostructures. The moiré effect can be especially strong for interlayer excitons, where electrons and holes reside in different layers and can be addressed separately. In particular, it was recently proposed that the moiré superlattice potential not only localizes interlayer exciton states at different superlattice positions, but also hosts an emerging moiré quasi-angular momentum (QAM) that periodically switches the optical selection rules for interlayer excitons at different moiré sites. Here we report the observation of multiple interlayer exciton states coexisting in a WSe2/WS2 moiré superlattice and unambiguously determine their spin, valley, and moiré QAM through novel resonant optical pump-probe spectroscopy and photoluminescence excitation spectroscopy. We demonstrate that interlayer excitons localized at different moiré sites can exhibit opposite optical selection rules due to the spatially-varying moiré QAM. Our observation reveals new opportunities to engineer interlayer exciton states and valley physics with moiré superlattices for optoelectronic and valleytronic applications.

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preprint2016arXiv

Observation of Ultralong Valley Lifetime in WSe2/MoS2 Heterostructures

The valley degree of freedom in two-dimensional (2D) crystals recently emerged as a novel information carrier in addition to spin and charge. The intrinsic valley lifetime in 2D transition metal dichalcoginides (TMD) is expected to be remarkably long due to the unique spin-valley locking behavior, where the inter-valley scattering of electron requires simultaneously a large momentum transfer to the opposite valley and a flip of the electron spin. The experimentally observed valley lifetime in 2D TMDs, however, has been limited to tens of nanoseconds so far. Here we report efficient generation of microsecond-long lived valley polarization in WSe2/MoS2 heterostructures by exploiting the ultrafast charge transfer processes in the heterostructure that efficiently creates resident holes in the WSe2 layer. These valley-polarized holes exhibit near unity valley polarization and ultralong valley lifetime: we observe a valley-polarized hole population lifetime of over 1 us, and a valley depolarization lifetime (i.e. inter-valley scattering lifetime) over 40 us at 10 Kelvin. The near-perfect generation of valley-polarized holes in TMD heterostructures with ultralong valley lifetime, orders of magnitude longer than previous results, opens up new opportunities for novel valleytronics and spintronics applications.

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preprint2016arXiv

Ultra-low power threshold for laser induced changes in optical properties of 2D Molybdenum dichalcogenides

The optical response of traditional semiconductors depends on the laser excitation power used in experiments. For two-dimensional (2D) semiconductors, laser excitation effects are anticipated to be vastly different due to complexity added by their ultimate thinness, high surface to volume ratio, and laser-membrane interaction effects. We show in this article that under laser excitation the optical properties of 2D materials undergo irreversible changes. Most surprisingly these effects take place even at low steady state excitation, which is commonly thought to be non-intrusive. In low temperature photoluminescence (PL) we show for monolayer (ML) MoSe2 samples grown by different techniques that laser treatment increases significantly the trion (i.e. charged exciton) contribution to the emission compared to the neutral exciton emission. Comparison between samples exfoliated onto different substrates shows that laser induced doping is more efficient for ML MoSe2 on SiO2/Si compared to h-BN and gold. For ML MoS2 we show that exposure to laser radiation with an average power in the $μ$W/$μ$m$^2$ range does not just increase the trion-to-exciton PL emission ratio, but may result in the irreversible disappearance of the neutral exciton PL emission and a shift of the main PL peak to lower energy.

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preprint2015arXiv

Electronic structure, spin-orbit coupling, and interlayer interaction in bulk MoS2 and WS2

We present in-depth measurements of the electronic band structure of the transition-metal dichalcogenides (TMDs) MoS2 and WS2 using angle-resolved photoemission spectroscopy, with focus on the energy splittings in their valence bands at the K point of the Brillouin zone. Experimental results are interpreted in terms of our parallel first-principles computations. We find that interlayer interaction only weakly contributes to the splitting in bulk WS2, resolving previous debates on its relative strength. We additionally find that across a range of TMDs, the band gap generally decreases with increasing magnitude of the valence-band splitting, molecular mass, or ratio of the out-of-plane to in-plane lattice constant. Our results provide an important reference for future studies of electronic properties of MoS2 and WS2 and their applications in spintronics and valleytronics devices.

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preprint2015arXiv

Spin-orbit engineering in transition metal dichalcogenide alloy monolayers

Transition metal dichalcogenide (TMDC) monolayers are newly discovered semiconductors for a wide range of applications in electronics and optoelectronics. Most studies have focused on binary monolayers that share common properties: direct optical bandgap, spin-orbit (SO) splittings of hundreds of meV, light-matter interaction dominated by robust excitons and coupled spin-valley states of electrons. Studies on alloy-based monolayers are more recent, yet they may not only extend the possibilities for TMDC applications through specific engineering but also help understanding the differences between each binary material. Here, we synthesized highly crystalline Mo$_{(1-x)}$W$_{x}$Se$_2$ to show engineering of the direct optical bandgap and the SO coupling in ternary alloy monolayers. We investigate the impact of the tuning of the SO spin splitting on the optical and polarization properties. We show a non-linear increase of the optically generated valley polarization as a function of tungsten concentration, where 40% tungsten incorporation is sufficient to achieve valley polarization as high as in binary WSe2. We also probe the impact of the tuning of the conduction band SO spin splitting on the bright versus dark state population i.e. PL emission intensity. We show that the MoSe2 PL intensity decreases as a function of temperature by an order of magnitude, whereas for WSe2 we measure surprisingly an order of magnitude increase over the same temperature range (T=4-300K). The ternary material shows a trend between these two extreme behaviors. These results show the strong potential of SO engineering in ternary TMDC alloys for optoelectronics and applications based on electron spin- and valley-control.

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preprint2014arXiv

Elastic Properties of Chemical-Vapor-Deposited Monolayer MoS2, WS2, and Their Bilayer Heterostructures

Elastic properties of materials are an important factor in their integration in applications. Chemical vapor deposited (CVD) monolayer semiconductors are proposed as key components in industrial-scale flexible devices and building blocks of 2D van der Waals heterostructures. However, their mechanical and elastic properties have not been fully characterized. Here we report high 2D elastic moduli of CVD monolayer MoS2 and WS2 (~ 170 N/m), which is very close to the value of exfoliated MoS2 monolayers and almost half the value of the strongest material, graphene. The 2D moduli of their bilayer heterostructures are lower than the sum of 2D modulus of each layer, but comparable to the corresponding bilayer homostructure, implying similar interactions between the hetero monolayers as between homo monolayers. These results not only provide deep insight to understanding interlayer interactions in 2D van der Waals structures, but also potentially allow engineering of their elastic properties as desired.

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preprint2013arXiv

Mechanically Modulated Tunneling Resistance in Monolayer MoS2

We report on the modulation of tunneling resistance in MoS2 monolayers by nano-indentation using an atomic force microscope (AFM). The resistance between the conductive AFM tip and the bottom electrode separated by a monolayer MoS2 is reversibly reduced by up to 4 orders of magnitude, which is attributed to enhanced quantum tunneling when the monolayer is compressed by the tip force. Under the WKB approximation, the experimental data is quantitatively explained by using the metal-insulator-metal tunneling diode model. As an ideal tunneling medium, the defect-free, nanometer-thick MoS2 monolayer can serve as the active layer for non-impacting nano-electro-mechanical switches.

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preprint2012arXiv

High Efficiency Graphene Solar Cells by Chemical Doping

We demonstrate single layer graphene/n-Si Schottky junction solar cells that under AM1.5 illumination exhibit a power conversion efficiency (PCE) of 8.6%. This performance, achieved by doping the graphene with bis(trifluoromethanesulfonyl)amide, exceeds the native(undoped) device performance by a factor of 4.5 and the best previously reported PCE in similar devices by a factor of nearly 6. Current-voltage, capacitance-voltage and external quantum efficiency measurements show the enhancement to be due to the doping induced shift in the graphene chemical potential which increases the graphene carrier density (decreasing the cell series resistance) and increases the built-in potential.

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preprint2010arXiv

Growth and characterization of multiferroic BiMnO$_3$ thin films

We have grown epitaxial thin films of multiferroic BiMnO$_3$ using pulsed laser deposition. The films were grown on SrTiO$_3$ (001) substrates by ablating a Bi-rich target. Using x-ray diffraction we confirmed that the films were epitaxial and the stoichiometry of the films was confirmed using Auger electron spectroscopy. The films have a ferromagnetic Curie temperature ($T_C$) of 85$\pm$5 K and a saturation magnetization of 1 $μ_B$/Mn. The electric polarization as a function of electric field ($P-E$) was measured using an interdigital capacitance geometry. The $P-E$ plot shows a clear hysteresis that confirms the multiferroic nature of the thin films.

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