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See-Hun Yang

See-Hun Yang appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.othercond-mat.str-elcond-mat.supr-conphysics.atom-ph

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Published work

14 published item(s)

preprint2020arXiv

Spintronics on Chiral Objects

Chirality, handedness, is one of the most fundamental intriguing asymmetries in nature. By definition, chiral objects cannot be superimposed onto each other after mirror reflection operation. Numerous examples of chiral structures can be found in nature, for example, chiral molecules and chiral magnetic nanostructures. Moving electrons are associated with handedness by their own spins due to spin-orbit interaction thus exhibiting various emergent phenomena as they interact with chiral materials, which otherwise would not be observed in achiral systems. This new paradigm allows the potential development of new forms of devices or methods by utilizing reciprocal interaction of chiral objects with moving electron spins. This review updates the remarkable progresses in Spintronics on Chiral Objects that have been made over the past few years providing provides an outlook for new opportunities and potential applications with new insights.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Classical limit of Rabi nutations in spins of ferromagnets

Rabi oscillations describe the interaction of a two-level system with a rotating electromagnetic field. As such, they serve as the principle method for manipulating quantum bits. By using a combination of femtosecond laser pulses and microwave excitations, we have observed the classical form of Rabi nutations in a ferromagnetic system whose equations of motion mirror the case of a precessing quantum two-level system. Key to our experiments is the selection of a subset of spins that is in resonance with the microwave excitation and whose coherence time is thereby extended. Taking advantage of Gilbert damping, the relaxation times are further increased such that mode-locking takes place. The observation of such Rabi nutations is the first step towards potential applications based on phase-coherent spin manipulation in ferromagnets.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Experimental Investigation of Temperature-Dependent Gilbert Damping in Permalloy Thin Films

The Gilbert damping of ferromagnetic materials is arguably the most important but least understood phenomenological parameter that dictates real-time magnetization dynamics. Understanding the physical origin of the Gilbert damping is highly relevant to developing future fast switching spintronics devices such as magnetic sensors and magnetic random access memory. Here, we report an experimental study of temperature-dependent Gilbert damping in permalloy (Py) thin films of varying thicknesses by ferromagnetic resonance. From the thickness dependence, two independent contributions to the Gilbert damping are identified, namely bulk damping and surface damping. Of particular interest, bulk damping decreases monotonically as the temperature decreases, while surface damping shows an enhancement peak at the temperature of ~50 K. These results provide an important insight to the physical origin of the Gilbert damping in ultrathin magnetic films.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Facet-dependent giant spin orbit torque in single crystalline antiferromagnetic Ir-Mn / ferromagnetic permalloy bilayers

There has been considerable interest in spin-orbit torques for the purpose of manipulating the magnetization of ferromagnetic (FM) films or nano-elements for spintronic technologies. Spin-orbit torques are derived from spin currents created from charge currents in materials with significant spin-orbit coupling that diffuse into an adjacent FM material. There have been intensive efforts to search for candidate materials that exhibit large spin Hall angles, i.e. efficient charge to spin current conversion. Here we report, using spin torque ferromagnetic resonance, the observation of a giant spin Hall angle of up to ~0.35 in (100) oriented single crystalline antiferromagnetic (AF) IrMn3 thin films, coupled to ferromagnetic permalloy layers, and a spin Hall angle that is about three times smaller in (111) oriented films. For the (100) oriented samples we show that the magnitude of the spin Hall angle can be significantly changed by manipulating the populations of the various AF domains through field annealing. Using ab-initio calculations we show that the triangular AF structure of IrMn3 gives rise to a substantial intrinsic spin Hall conductivity that is three times larger for the (100) than for the (111) orientations, consistent with our experimental findings.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Determination of intrinsic damping of perpendicularly magnetized ultrathin films from time resolved precessional magnetization measurements

Magnetization dynamics are strongly influenced by damping. An effective damping constant αeff is often determined experimentally from the spectral linewidth of the free induction decay of the magnetization after the system is excited to its non-equilibrium state. Such an αeff, however, reflects both intrinsic damping as well as inhomogeneous broadening. In this paper we compare measurements of the magnetization dynamics in ultrathin non-epitaxial films having perpendicular magnetic anisotropy using two different techniques, time-resolved magneto optical Kerr effect (TRMOKE) and hybrid optical-electrical ferromagnetic resonance (OFMR). By using an external magnetic field that is applied at very small angles to the film plane in the TRMOKE studies, we develop an explicit closed-form analytical expression for the TRMOKE spectral linewidth and show how this can be used to reliably extract the intrinsic Gilbert damping constant. The damping constant determined in this way is in excellent agreement with that determined from the OFMR method on the same samples. Our studies indicate that the asymptotic high-field approach that is often used in the TRMOKE method to distinguish the intrinsic damping from the effective damping may result in significant error, because such high external magnetic fields are required to make this approach valid that they are out of reach. The error becomes larger the lower is the intrinsic damping constant, and thus may account for the anomalously high damping constants that are often reported in TRMOKE studies. In conventional ferromagnetic resonance (FMR) studies, inhomogeneous contributions can be readily distinguished from intrinsic damping contributions from the magnetic field dependence of the FMR linewidth. Using the analogous approach, we show how reliable values of the intrinsic damping can be extracted from TRMOKE.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Giant thermal spin torque assisted magnetic tunnel junction switching

Spin-polarized charge-currents induce magnetic tunnel junction (MTJ) switching by virtue of spin-transfer-torque (STT). Recently, by taking advantage of the spin dependent thermoelectric properties of magnetic materials, novel means of generating spin-currents from temperature gradients, and their associated thermal spin torques (TSTs) have been proposed, but so far these TSTs have not been large enough to influence MTJ switching. Here we demonstrate significant TSTs in MTJs by generating large temperature gradients across ultrathin MgO tunnel barriers that considerably affect the switching fields of the MTJ. We attribute the origin of the TST to an asymmetry of the tunneling conductance across the zero-bias voltage of the MTJ. Remarkably, we estimate through magneto-Seebeck voltage measurements that the charge-currents that would be generated due to the temperature gradient would give rise to STT that is a thousand times too small to account for the changes in switching fields that we observe.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Role of transparency of platinum-ferromagnet interface in determining intrinsic magnitude of spin Hall effect

The spin Hall effect (SHE) converts charge current to pure spin currents in orthogonal directions in materials that have significant spin-orbit coupling.The efficiency of the conversion is described by the spin Hall Angle (SHA). The SHA can most readily be inferred by using the generated spin currents to excite or rotate the magnetization of ferromagnetic films or nano-elements via spin-transfer torques.Some of the largest spin torque derived spin Hall angles (ST-SHA) have been reported in platinum. Here we show, using spin torque ferromagnetic resonance (ST-FMR) measurements, that the transparency of the Pt-ferromagnet interface to the spin current plays a central role in determining the magnitude of the ST-SHA. We measure a much larger ST-SHA in Pt/cobalt (~0.11) compared to Pt/permalloy (~0.05) bilayers when the interfaces are assumed to be completely transparent. Taking into account the transparency of these interfaces, as derived from spin-mixing conductances, we find that the intrinsic SHA in platinum has a much higher value of 0.19 +- 0.04 as compared to the ST-SHA. The importance of the interface transparency is further exemplified by the insertion of atomically thin magnetic layers at the Pt/permalloy interface that we show strongly modulates the magnitude of the ST-SHA.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Domain wall trajectory determined by its fractional topological edge defects

A domain wall (DW) in a ferromagnetic nanowire is composed of elementary topological bulk and edge defects with integer and fractional winding numbers, respectively, whose relative spatial arrangement determines the chirality of the DW. Here we show how we can understand and control the trajectory of DWs in magnetic branched networks, composed of connected nanowires, by considering their fractional elementary topological defects and how they interact with those innate to the network. We first develop a highly reliable mechanism for the injection of a DW of a given chirality into a nanowire and show that its chirality determines which branch the DW follows at a symmetric Y-shaped magnetic junction - the fundamental building block of the network. Using these concepts, we unravel the origin of the one-dimensional nature of magnetization reversal of connected artificial spin ice systems that have been observed in the form of Dirac strings.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Enhanced interface perpendicular magnetic anisotropy in Ta|CoFeB|MgO using nitrogen doped Ta underlayers

We show that the magnetic characteristics of Ta|CoFeB|MgO magnetic heterostructures are strongly influenced by doping the Ta underlayer with nitrogen. In particular, the saturation magnetization drops upon doping the Ta underlayer, suggesting that the doped underlayer acts as a boron diffusion barrier. In addition, the thickness of the magnetic dead layer decreases with increasing nitrogen doping. Surprisingly, the interface magnetic anisotropy increases to ~1.8 erg/cm2 when an optimum amount of nitrogen is introduced into the Ta underlayer. These results show that nitrogen doped Ta serves as a good underlayer for Spintronics applications including magnetic tunnel junctions and domain wall devices.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Spin injection and detection in lanthanum- and niobium-doped SrTiO3 using the Hanle technique

There has been much interest in the injection and detection of spin polarized carriers in semiconductors for the purposes of developing novel spintronic devices. Here we report the electrical injection and detection of spin-polarized carriers into Nb-doped strontium titanate (STO) single crystals and La-doped STO epitaxial thin films using MgO tunnel barriers and the three-terminal Hanle technique. Spin lifetimes of up to ~100 ps are measured at room temperature and vary little as the temperature is decreased to low temperatures. However, the mobility of the STO has a strong temperature dependence. This behavior and the carrier doping dependence of the spin lifetime suggest that the spin lifetime is limited by spin-dependent scattering at the MgO/STO interfaces, perhaps related to the formation of doping induced Ti3+. Our results reveal a severe limitation of the three-terminal Hanle technique for measuring spin lifetimes within the interior of the subject material.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Negative tunneling magnetoresistance by canted magnetization in MgO/NiO tunnel barriers

The influence of insertion of an ultra-thin NiO layer between the MgO barrier and ferromagnetic electrode in magnetic tunnel junctions has been investigated by measuring the tunneling magnetoresistance and the X-ray magnetic circular dichroism (XMCD). The magnetoresistance shows a high asymmetry with respect to bias voltage, giving rise to a negative value of -16% at 2.8 K. We attribute this to the formation of non-collinear spin structures in the NiO layer as observed by XMCD. The magnetic moments of the interface Ni atoms tilt from the easy axis due to exchange interaction and the tilting angle decreases with increasing the NiO thickness. The experimental observations are further support by non-collinear spin density functional theory.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

The Kondo effect in magnetic impurities and ferromagnetic contacts

Planar macroscopic magnetic tunnel junctions exhibit well defined zero bias anomalies when a thin layer of ferromagnetic CoFe(B) nanodots is inserted within a MgO based tunnel barrier. The conductance curves exhibit a single and a double peak, respectively, for anti-parallel and parallel alignment of the magnetizations of the electrodes which sandwich the tunnel barrier. This leads to a suppression of the tunneling magnetoresistance near zero bias. We show that the double peak structure indicates that the zero-bias anomaly is spin-split due to a magnetic exchange interaction between the magnetic nanodots and the ferromagnetic electrodes. Using a model based on an Anderson quantum dot coupled to ferromagnetic leads, we show that these results imply the coexistence of a Kondo effect and ferromagnetism.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Extremely long quasiparticle spin lifetimes in superconducting aluminium using MgO tunnel spin injectors

There has been an intense search in recent years for long-lived spin-polarized carriers for spintronic and quantum-computing devices. Here we report that spin polarized quasi-particles in superconducting aluminum layers have surprisingly long spin-lifetimes, nearly a million times longer than in their normal state. The lifetime is determined from the suppression of the aluminum's superconductivity resulting from the accumulation of spin polarized carriers in the aluminum layer using tunnel spin injectors. A Hanle effect, observed in the presence of small in-plane orthogonal fields, is shown to be quantitatively consistent with the presence of long-lived spin polarized quasi-particles. Our experiments show that the superconducting state can be significantly modified by small electric currents, much smaller than the critical current, which is potentially useful for devices involving superconducting qubits.

0 citations0 reviewsNo code linkedOpen access
preprint2007arXiv

Crossover from Kondo assisted suppression to co-tunneling enhancement of tunneling magnetoresistance via ferromagnetic nanodots in MgO tunnel barriers

Recently, it has been shown that magnetic tunnel junctions with thin MgO tunnel barriers exhibit extraordinarily high tunneling magnetoresistance (TMR) values at room temperature1, 2. However, the physics of spin dependent tunneling through MgO barriers is only beginning to be unravelled. Using planar magnetic tunnel junctions in which ultra-thin layers of magnetic metals are deposited in the middle of a MgO tunnel barrier here we demonstrate that the TMR is strongly modified when these layers are discontinuous and composed of small pancake shaped nanodots. At low temperatures, in the Coulomb blockade regime, for layers less than ~1 nm thick, the conductance of the junction is increased at low bias consistent with Kondo assisted tunneling. In the same regime we observe a suppression of the TMR. For slightly thicker layers, and correspondingly larger nanodots, the TMR is enhanced at low bias, consistent with co-tunneling.

0 citations0 reviewsNo code linkedOpen access