Researcher profile

Sébastien Pezzagna

Sébastien Pezzagna contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate

Trust snapshot

Quick read

Trust 17 - Baseline
4works
0followers
5topics
4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Research graph

See the researcher in context

Open full explorer

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

4 published item(s)

preprint2026arXiv

Oxygen in diamond: thermal stability of ST1 spin centres and creation of oxygen-pair complexes

Little is known about oxygen-related defects in diamond. Recently, the promising room-temperature spin centre named ST1 was identified as an oxygen centre, but of still unknown atomic structure and thermal stability. In this work, we report on the optically active oxygen-related centres and the conditions for their formation, using ion implantation of oxygen in various conditions of depth and fluence. More specifically, we establish the temperature formation/stability range of the ST1 centre, which has a maximum at about 1100°C and is narrower than for NV centres. In these conditions, optically detected magnetic resonance (ODMR) on small ST1 ensembles was measured with a spin readout contrast of > 20% at 300K. In cathodoluminescence, the 535 nm ST1 peak is not observed. Besides, a broad peak centred at 460 nm is measured for implantation of O$_2$ molecular ions. For an annealing temperature of 1500°C, a different centre is formed (with ZPL at 584.5 nm) with an intensity increasing with a power law 1.5 < p < 1.9 dependence from the implantation fluence. This suggests that this centre contains two oxygen atoms. Besides, a new spectral feature associated to an intrinsic defect was also observed, with four prominent lines (especially at 594nm). Finally, the thermal formation and stability of oxygen centres in diamond presented here are important for the identification of the atomic structure of defects such as the ST1 and possible O$_2$V$_x$ complex by means of ab initio calculations. Indeed, the formation energies and charge states of defect centres are easier to compute than the full energy level scheme, which to date still remains unsuccessful regarding the ST1 centre.

preprint2022arXiv

Detection of single W-centers in silicon

Controlling the quantum properties of individual fluorescent defects in silicon is a key challenge towards advanced quantum photonic devices prone to scalability. Research efforts have so far focused on extrinsic defects based on impurities incorporated inside the silicon lattice. Here we demonstrate the detection of single intrinsic defects in silicon, which are linked to a tri-interstitial complex called W-center, with a zero-phonon line at 1.218$μ$m. Investigating their single-photon emission properties reveals new information about this common radiation damage center, such as its dipolar orientation and its photophysics. We also identify its microscopic structure and show that although this defect does not feature electronic states in the bandgap, Coulomb interactions lead to excitonic radiative recombination below the silicon bandgap. These results could set the stage for numerous quantum perspectives based on intrinsic luminescent defects in silicon, such as quantum integrated photonics, quantum communications and quantum sensing.

preprint2015arXiv

Nanoimplantation and Purcell enhancement of single NV centers in photonic crystal cavities in diamond

We present the controlled creation of single nitrogen-vacancy (NV) centers via ion implantation at the center of a photonic crystal cavity which is fabricated in an ultrapure, single crystal diamond membrane. High-resolution placement of NV centers is achieved using collimation of a 5keV-nitrogen ion beam through a pierced tip of an atomic force microscope (AFM). We demonstrate coupling of the implanted NV centers&#39; broad band fluorescence to a cavity mode and observe Purcell enhancement of the spontaneous emission. The results are in good agreement with a master equation model for the cavity coupling.

preprint2013arXiv

Statistical investigations on nitrogen-vacancy center creation

Experiments show that shallow nitrogen implantations (<10keV) result in a negatively charged nitrogen-vacancy center (NV-) yield of 0.01-0.1%. The most succesful technique for introducing NV- centers in the carbon matrix is ion implantation followed by annealing at 1100K. We investigated the influence of channeling effects during shallow implantation and statistical diffusion using molecular dynamics (MD) and Monte Carlo (MC) approaches. Energy barriers for the diffusion process were calculated using the density functional theory (DFT). Our simulations show a significant difference in the NV yield compared to the experiment. Statistically, 25% of the implanted nitrogens form a NV center after annealing.