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Researcher profile

Sayantan Ghosh

Sayantan Ghosh contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallphysics.app-phcond-mat.mtrl-scicond-mat.othercond-mat.supr-conData Structures and Algorithmsnucl-thphysics.data-anq-fin.ST

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Published work

7 published item(s)

preprint2024arXiv

The Impact of Anisotropy on Neutron Star Properties: Insights from I-f-C Universal Relations

This study presents a universal relation for anisotropic neutron stars, called the $I-f-C$ relation, which accounts for the local anisotropic pressure using the Quasi-Local (QL) Model proposed by Horvat et al. \cite{QL_Model} to describe the anisotropy inside the neutron star. This study analyzes approximately 60 unified tabulated EoS-ensembles, spanning from relativistic to non-relativistic mean-field models, that comply with multimessenger constraints and cover a broad range of stiffness. The results indicate that the relationship between the parameters becomes more robust with positive anisotropy, while it weakens with negative anisotropy. With the help of the GW170817 \& GW190814 tidal deformability limit, a theoretical limit for the canonical $f$-mode frequency for both isotropic and anisotropic stars is established. For isotropic case the canonical $f$-mode frequency for event GW170817 \& GW190814 is $f_{1.4} = 2.605^{+0.487} _ {-0.459}\ \mathrm{kHz}$ and $ f_{1.4} = 2.093^{+0.150} _ {-0.125} \ \mathrm{kHz}$ respectively. These established relationships have the potential to serve as a reliable tool to limit the equation of state of nuclear matter when measurements of relevant observables are obtained.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Wavelength-Controlled Photocurrent Polarity Switching in BP-MoS$_2$ Heterostructure

Layered two-dimensional van der Waals (vdW) semiconductors and their heterostructures have been shown to exhibit positive photoconductance (PPC) in many studies. A few recent reports have demonstrated negative photoconductance (NPC) as well that can enable broadband photodetection besides multi-level optoelectronic logic and memory. Controllable and reversible switching between PPC and NPC is a key requirement for these applications. This report demonstrates visible-to-near infrared wavelength-driven NPC and PPC, along with reversible switching between the two, in an air stable, high mobility, broadband black phosphorus (BP) field effect transistor (FET) covered with a few layer MoS$_2$ flake. The crossover switching wavelength can be tuned by varying the MoS$_2$ bandgap through its flake thickness and the NPC and PPC photoresponsivities can be modulated using electrostatic gating as well as laser power. Recombination-driven NPC and PPC allows for reversible switching at reasonable time scales of a few seconds. Further, gate voltage-dependent negative persistent photoconductance enables synaptic behavior that is well-suited for optosynaptic applications.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Coupling-decoupling of conducting topological surface states in thick Bi$_2$Se$_3$ single crystals

Sensitive ac susceptibility measurements of a topological insulator, Bi$_2$Se$_3$ single crystal, using mutual two coil inductance technique (Ref. 32) shows coupling and decoupling of high conducting surface states. The coupling of the surface states exists upto thickness of 70 microns, which is much larger than the direct coupling limit of thickness approximately 5 to 10 nanometers found in thin films. The high conducting topological surface states are coupled through the crystal via high electrically conducting channels, generated by Selenium vacancies. These conducting channels through the bulk disintegrate beyond 70 micron thickness and at high temperatures, thereby leading to decoupling of the topological surface states. We show the decoupled surface states persist upto room temperature in the topological insulator. Analysis of Nyquist plot of ac-susceptibility response of the TI using a resistor (R) Inductor (L) model shows an inductive nature of the coupling between surface states found in these Bi$_2$Se$_3$ crystals.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Imaging the topological current carrying state and the surface to bulk transformation, in Bi2Se3 single crystal and thin film

Magneto-optics based current imaging technique compares the nature of topological current distribution in a single crystal and thin film of topological insulator material, Bi2Se3. The single crystal, at low temperatures, has uniform topological surface current sheets which are about 3.6 nm thick. With increasing temperature, the current partially diverts into the crystal bulk and concomitantly, the sheet break up into a patchy network of high and low current density regions. The temperature dependence of the high current density areas shows that the surface to bulk transformation in the crystal has features of classical phase transition phenomena. The surface area fraction with topological high current density behaves like an order parameter. This phase transition is driven by disorder. In Bi2Se3 thin film we show the presence of quasi one-dimensional topological edge currents which are suppressed with a weak applied magnetic field. The edge current transforms into a uniform bulk current in the film.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Near-direct bandgap $WSe_2$/$ReS_2$ type-II pn heterojunction for enhanced ultrafast photodetection and high-performance photovoltaics

PN heterojunctions comprising layered van der Waals (vdW) semiconductors have been used to demonstrate current rectifiers, photodetectors, and photovoltaic devices. However, a direct or near-direct bandgap at the heterointerface that can significantly enhance optical generation, for high light absorbing few/multi-layer vdW materials, has not yet been shown. In this work, for the first time, few-layer group-6 transition metal dichalcogenide (TMD) $WSe_2$ is shown to form a sizeable (0.7 eV) near-direct bandgap with type-II band alignment at its interface with the group-7 TMD $ReS_2$ through density functional theory calculations. Further, the type-II alignment and photogeneration across the interlayer bandgap have been experimentally confirmed through micro-photoluminescence and IR photodetection measurements, respectively. High optical absorption in few-layer flakes, large conduction and valence band offsets for efficient electron-hole separation and stacking of light facing, direct bandgap $ReS_2$ on top of gate tunable $WSe_2$ are shown to result in excellent and tunable photodetection as well as photovoltaic performance through flake thickness dependent optoelectronic measurements. Few-layer flakes demonstrate ultrafast response time (5 $μ$s) at high responsivity (3 A/W) and large photocurrent generation and responsivity enhancement at the heterostructure overlap region (10-100X) for 532 nm laser illumination. Large open-circuit voltage of 0.64 V and short-circuit current of 2.6 $μ$A enables high output electrical power. Finally, long term air-stability and a facile single contact metal fabrication process makes the multi-functional few-layer $WSe_2$/$ReS_2$ heterostructure diode technologically promising for next-generation optoelectronic applications.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Planar pinning induced, lowering of vortex dimensionality and low field melting in a single crystal of Ba0.6K0.4Fe2As2

Theoretically, the vortex melting phenomenon occurs at both low and high magnetic fields at a fixed temperature. While the high field melting has been extensively investigated in high Tc cuprates, the low field melting phenomena in the presence of disorder hasn't been well explored. Using bulk magnetization measurement and high-sensitivity differential magneto-optical imaging technique, we detect a low-field vortex melting phenomenon in a single crystal of Ba0.6K0.4Fe2As2. The low field melting is accompanied by a significant change in local magnetization ~ 3 G, which decreases with increasing applied field. The observed vortex melting phenomena is traced on a field temperature phase diagram and which lies very close to theoretically predicted Lindemann criteria based low field melting line. Our analysis shows a Lindemann number cL = 0.14 associated with the low field melting. Imaging of low-field vortex melting features shows the process nucleates via formation of extended finger-like projections which spreads across the sample with increasing field or temperature, before entering into an interaction-dominated vortex solid phase regime. Magnetization scaling analysis shows that the dimensionality of melting vortex state is close to one. Angular dependence of bulk magnetization hysteresis loop in our sample shows the presence of extended defects. From our studies, we propose the sample contains a peculiar geometry of extended defects arranged in a plane in the sample, with these planes extending through the sample thickness. In the weak intervortex interaction limit, we argue that reduced vortex dimensionality due to pinning by these peculiar extended defect planes strongly enhances thermal fluctuations. It is these extended defects planes, which we propose are promoting low dimensional vortex melting in the pnictide system.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Statistical Properties of Fluctuations: A Method to Check Market Behavior

We analyze the Bombay stock exchange (BSE) price index over the period of last 12 years. Keeping in mind the large fluctuations in last few years, we carefully find out the transient, non-statistical and locally structured variations. For that purpose, we make use of Daubechies wavelet and characterize the fractal behavior of the returns using a recently developed wavelet based fluctuation analysis method. the returns show a fat-tail distribution as also weak non-statistical behavior. We have also carried out continuous wavelet as well as Fourier power spectral analysis to characterize the periodic nature and correlation properties of the time series.

0 citations0 reviewsNo code linkedOpen access