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Researcher profile

Satoshi Yoshida

Satoshi Yoshida contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-sciBiological Physicscond-mat.stat-mech

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Published work

3 published item(s)

preprint2022arXiv

Thermodynamic role of main reaction pathway and multi-body information flow in membrane transport

The two classes of membrane transport, namely, secondary active and passive transport, are understood as different reaction pathways in the same protein structure, described by the 16-state model in this paper. To quantify the thermodynamic difference between secondary active transport and passive transport, we extend the second law of information thermodynamics of the autonomous demon in the four-state model composed of two subsystems to the 16-state model composed of four subsystems representing the membrane transport. We reduce the 16 states to 4 states and derive the coarse-grained second law of information thermodynamics, which provides an upper bound of the free energy transport by the coarse-grained information flow. We also derive an upper bound on the free energy transport by the multi-body information flow representing the two-body or four-body correlations in the 16-state model by exploiting the cycle decomposition. The coarse-grained information flow and the multi-body information flows express the quantitative difference between secondary active and passive transport. The numerical analysis shows that the coarse-grained information flow is positive for secondary active transport and negative for passive transport. The four-body correlation is dominant in the multi-body information flows for secondary active transport. In contrast, the two-body correlation is dominant for passive transport. This result shows that both the sign of the coarse-grained information flow and the difference of the four-body correlation and the two-body correlation explain the difference of the free energy transport in secondary active and passive transport.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Hybridization between the ligand $p$ band and Fe-3$d$ orbitals in the p-type ferromagnetic semiconductor (Ga,Fe)Sb

(Ga,Fe)Sb is a promising ferromagnetic semiconductor for practical spintronic device applications because its Curie temperature ($T_{\rm C}$) is above room temperature. However, the origin of ferromagnetism with high $T_{\rm C}$ remains to be elucidated. Here, we use soft x-ray angle-resolved photoemission spectroscopy (SX-ARPES) to investigate the valence-band (VB) structure of (Ga$_{0.95}$,Fe$_{0.05}$)Sb including the Fe-3$d$ impurity band (IB), to unveil the mechanism of ferromagnetism in (Ga,Fe)Sb. We find that the VB dispersion in (Ga$_{0.95}$,Fe$_{0.05}$)Sb observed by SX-ARPES is similar to that of GaSb, indicating that the doped Fe atoms hardly affect the band dispersion. The Fe-3$d$ resonant ARPES spectra demonstrate that the Fe-3$d$ IB crosses the Fermi level ($E_{\rm F}$) and hybridizes with the VB of GaSb. These observations indicate that the VB structure of (Ga$_{0.95}$,Fe$_{0.05}$)Sb is consistent with that of the IB model which is based on double-exchange interaction between the localized 3$d$ electrons of the magnetic impurities. The results indicate that the ferromagnetism in (Ga,Fe)Sb is formed by the hybridization of the Fe-3$d$ IB with the ligand $p$ band of GaSb.

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preprint2019arXiv

Intrinsic 2D Ferromagnetism in V5Se8 Epitaxial Thin Films

The discoveries of intrinsic ferromagnetism in atomically-thin van der Waals crystals have opened up a new research field enabling fundamental studies on magnetism at two-dimensional (2D) limit as well as development of magnetic van der Waals heterostructures. To date, a variety of 2D ferromagnetism has been explored mainly by mechanically exfoliating 'originally ferromagnetic (FM)' van der Waals crystals, while bottom-up approach by thin film growth technique has demonstrated emergent 2D ferromagnetism in a variety of 'originally non-FM' van der Waals materials. Here we demonstrate that V5Se8 epitaxial thin films grown by molecular-beam epitaxy (MBE) exhibit emergent 2D ferromagnetism with intrinsic spin polarization of the V 3d electrons despite that the bulk counterpart is 'originally antiferromagnetic (AFM)'. Moreover, thickness-dependence measurements reveal that this newly-developed 2D ferromagnet could be classified as an itinerant 2D Heisenberg ferromagnet with weak magnetic anisotropy, broadening a lineup of 2D magnets to those potentially beneficial for future spintronics applications.

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