Researcher profile

Sanjoy Pal

Sanjoy Pal contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate

cond-mat.mtrl-sci physics.optics

Trust snapshot

Quick read

Trust 13 - Baseline

2works

0followers

2topics

4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

preprint2014arXiv

Carbon Irradiated SI-GaAs for Photoconductive THz Detection

We report here a photoconductive material for THz generation and detection with sub-picosecond carrier lifetime made by C12 (Carbon) irradiation on commercially available semi-insulating (SI) GaAs. We are able to reduce the carrier lifetime of SI-GaAs down to sub-picosecond by irradiating it with various irradiation dosages of Carbon (C12) ions. With an increase of the irradiation dose from ~1012 /cm2 to ~1015 /cm2 the carrier lifetime of SI-GaAs monotonously decreases to 0.55 picosecond, resulting in strongly improved THz pulse detection compared with normal SI-GaAs.

preprint2013arXiv

Highly Efficient and Electrically Robust Carbon Irradiated SI-GaAs Based Photoconductive THz Emitters

We demonstrate here an efficient THz source with low electrical power consumption. We have increased the maximum THz radiation power emitted from SI-GaAs based photoconductive emitters by two orders of magnitude. By irradiating the SI-GaAs substrate with Carbon-ions up to 2 micron deep, we have created lot of defects and decreased the life time of photo-excited carriers inside the substrate. Depending on the irradiation dose we find 1 to 2 orders of magnitude decrease in total current flowing in the substrate, resulting in subsequent decrease of heat dissipation in the antenna. This has resulted in increasing maximum cut-off of the applied voltage across Photo-Conductive Emitter (PCE) electrodes to operate the device without thermal breakdown from ~35 V to > 150 V for the 25 micron electrode gaps. At optimum operating conditions, carbon irradiated (10^14 ions/cm^2) PCEs give THz pulses with power about 100 times higher in comparison to the usual PCEs on SI-GaAs and electrical to THz power conversion efficiency has improved by a factor of ~ 800.