Source author record

Sanjeev K. Gupta

Sanjeev K. Gupta appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

Catalog footprint

What is connected

2works
2topics
4close collaborators

Actions

Connect this record

Log in to claim

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

2 published item(s)

preprint2013arXiv

Optical Properties and Raman Studies of Partially Edge Terminated Vertically Aligned Nanocrystalline MoS2 Thin Film

The optical and vibrational properties of nanocrystalline thin films of MoS2, comprised of a mixture of edge terminated vertically aligned (ETVA) and (001)-oriented regions, on large insulating substrates are reported. From high resolution transmission electron microscopy (HRTEM), the average size of ETVA nanocrystals were ~5 nm and each nanocrystal consisted of only 3 to 5 monolayers of MoS2. The films were highly transparent (~80%) but the percent of transmittance decreased as the energy of the incident light approached to the band gap. Additionally, weak excitonic peaks were observed both in the absorption and transmission spectra. The room temperature Raman study showed that both the E12g and A1g modes were significantly broader, and a few additional Raman modes were observed when compared to bulk MoS2. The broadening of the A1g mode was analyzed using the phonon-confinement model and the calculated particle size was in good agreement with TEM observations. Moreover, the temperature coefficient of the A1g mode was estimated from the temperature dependent Raman studies.

preprint2009arXiv

Modified Confinement Model for Size Dependent Raman Shift and Linewidth of Silicon Nanocrystals

A modified phonon confinement model considering the size distribution, an improved phonon dispersion curve and a confinement function is developed for the calculation of size dependent Raman spectra of the silicon (Si) nanocrystals. The model is capable in simultaneous calculation of the Raman shift, intensity and linewidth. The calculated size dependent redshift and linewidth of Raman spectra are in good agreement with the available experimental data in literature and better than previously reported theoretical results. The rapid rise in the redshift and linewidth for relatively smaller Si nanocrystals are well reproduced. The asymmetric behavior of Raman spectra is also obtained from the present model.