Source author record

Sangwoo Kang

Sangwoo Kang appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

cond-mat.mes-hall cond-mat.str-el math.AP math.NA Numerical Analysis

Catalog footprint

What is connected

4works

5topics

4close collaborators

Actions

Connect this record

Open graph Browse works

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

preprint2023arXiv

Inverse problem for a planar conductivity inclusion

This paper concerns the inverse problem of determining a planar conductivity inclusion. Our aim is to analytically recover from the generalized polarization tensors (GPTs), which can be obtained from exterior measurements, a homogeneous inclusion with arbitrary constant conductivity. The primary outcome of recovering a homogeneous inclusion is an inversion formula in terms of the GPTs for conformal mapping coefficients associated with the inclusion. To prove the formula, we establish matrix factorizations for the GPTs.

preprint2022arXiv

Monostatic sampling methods in limited-aperture configuration

We present monostatic sampling methods for limited-aperture scattering problems in two dimensions. The direct sampling method (DSM) is well known to provide a robust, stable, and fast numerical scheme for imaging inhomogeneities from multistatic measurements even with only one or two incident fields. However, in practical applications, monostatic measurements in limited-aperture configuration are frequently encountered. A monostatic sampling method (MSM) was studied in full-aperture configuration in recent literature. In this paper, we develop MSM in limited-aperture configuration and derive an asymptotic formula of the corresponding indicator function. Based on the asymptotic formula, we then analyze the imaging performance of the proposed method depending on the range of measurement directions and the geometric, material properties of inhomogeneities. Furthermore, we propose a modified numerical scheme with multi-frequency measurements that improve imaging performance, especially for small anomalies. Numerical simulations are presented to validate the analytical results.

preprint2016arXiv

Air Stable Doping and Intrinsic Mobility Enhancement in Monolayer $MoS_{2}$ by Amorphous $TiO_{x}$ Encapsulation

To reduce Schottky-barrier-induced contact and access resistance, and the impact of charged impurity and phonon scattering on mobility in devices based on 2D transition metal dichalcogenides (TMDs), considerable effort has been put into exploring various doping techniques and dielectric engineering using $high-κ$ oxides, respectively. The goal of this work is to demonstrate a $high-κ$ dielectric that serves as an effective n-type charge transfer dopant on monolayer (ML) molybdenum disulfide ($MoS_{2}$). Utilizing amorphous titanium suboxide (ATO) as the '$high-κ$ dopant', we achieved a contact resistance of ~ $180$ $Ω.μm$ which is the lowest reported value for ML $MoS_{2}$. An ON current as high as $240$ $μA/μm$ and field effect mobility as high as $83$ $cm^2/V-s$ were realized using this doping technique. Moreover, intrinsic mobility as high as $102$ $cm^2/V-s$ at $300$ $K$ and $501$ $cm^2/V-s$ at $77$ $K$ were achieved after ATO encapsulation which are among the highest mobility values reported on ML $MoS_{2}$. We also analyzed the doping effect of ATO films on ML $MoS_{2}$, a phenomenon which is absent when stoichiometric $TiO_{2}$ is used, using ab initio density functional theory (DFT) calculations which shows excellent agreement with our experimental findings. Based on the interfacial-oxygen-vacancy mediated doping as seen in the case of $high-κ$ ATO - ML $MoS_{2}$, we propose a mechanism for the mobility enhancement effect observed in TMD-based devices after encapsulation in a $high-κ$ dielectric environment.

preprint2014arXiv

Gate-Tunable Resonant Tunneling in Double Bilayer Graphene Heterostructures

We demonstrate gate-tunable resonant tunneling and negative differential resistance in the interlayer current-voltage characteristics of rotationally aligned double bilayer graphene heterostructures separated by hexagonal boron-nitride (hBN) dielectric. An analysis of the heterostructure band alignment using individual layer densities, along with experimentally determined layer chemical potentials indicates that the resonance occurs when the energy bands of the two bilayer graphene are aligned. We discuss the tunneling resistance dependence on the interlayer hBN thickness, as well as the resonance width dependence on mobility and rotational alignment.