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Researcher profile

Sangwoo Kang

Sangwoo Kang contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.str-elmath.APmath.NANumerical Analysis

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Published work

3 published item(s)

preprint2023arXiv

Inverse problem for a planar conductivity inclusion

This paper concerns the inverse problem of determining a planar conductivity inclusion. Our aim is to analytically recover from the generalized polarization tensors (GPTs), which can be obtained from exterior measurements, a homogeneous inclusion with arbitrary constant conductivity. The primary outcome of recovering a homogeneous inclusion is an inversion formula in terms of the GPTs for conformal mapping coefficients associated with the inclusion. To prove the formula, we establish matrix factorizations for the GPTs.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Monostatic sampling methods in limited-aperture configuration

We present monostatic sampling methods for limited-aperture scattering problems in two dimensions. The direct sampling method (DSM) is well known to provide a robust, stable, and fast numerical scheme for imaging inhomogeneities from multistatic measurements even with only one or two incident fields. However, in practical applications, monostatic measurements in limited-aperture configuration are frequently encountered. A monostatic sampling method (MSM) was studied in full-aperture configuration in recent literature. In this paper, we develop MSM in limited-aperture configuration and derive an asymptotic formula of the corresponding indicator function. Based on the asymptotic formula, we then analyze the imaging performance of the proposed method depending on the range of measurement directions and the geometric, material properties of inhomogeneities. Furthermore, we propose a modified numerical scheme with multi-frequency measurements that improve imaging performance, especially for small anomalies. Numerical simulations are presented to validate the analytical results.

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preprint2014arXiv

Gate-Tunable Resonant Tunneling in Double Bilayer Graphene Heterostructures

We demonstrate gate-tunable resonant tunneling and negative differential resistance in the interlayer current-voltage characteristics of rotationally aligned double bilayer graphene heterostructures separated by hexagonal boron-nitride (hBN) dielectric. An analysis of the heterostructure band alignment using individual layer densities, along with experimentally determined layer chemical potentials indicates that the resonance occurs when the energy bands of the two bilayer graphene are aligned. We discuss the tunneling resistance dependence on the interlayer hBN thickness, as well as the resonance width dependence on mobility and rotational alignment.

0 citations0 reviewsNo code linkedOpen access