Source author record

Sang-Hoon Han

Sang-Hoon Han appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

Catalog footprint

What is connected

2works
3topics
4close collaborators

Actions

Connect this record

Log in to claim

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

2 published item(s)

preprint2021arXiv

Topology for Substrate Routing in Semiconductor Package Design

In this work, we propose a new signal routing method for solving routing problems that occur in the design process of semiconductor package substrates. Our work uses a topological transformation of the layers of the package substrate in order to simplify the routing problem into a problem of connecting points on a circle with non-intersecting straight line segments. The circle, which we call the Circular Frame, is a polygonal schema, which is originally used in topology to study the topological structure of 2-manifolds. We show through experiments that our new routing method based on the Circular Frame competes with certain grid-based routing algorithms.

preprint2012arXiv

Terahertz nano antenna enabled early transition in VO2

We study terahertz transmission through nano-patterned vanadium dioxide thin film. It is found that the patterning allows the lowering of the apparent transition temperature. For the case of the smallest width nano antennas, the transition temperature is lower by as many as ten degrees relative to the bare film, so that the nano patterned hysteresis curves completely separate themselves from their bare film counterparts. This early transition comes from the one order of magnitude enhanced effective dielectric constants by nano antennas. This phenomenon opens up the possibility of transition temperature engineering.