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Sandheep Ravishankar

Sandheep Ravishankar contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2023arXiv

Comparing Methods of Characterizing Energetic Disorder in Organic Solar Cells

Energetic disorder has been known for decades to limit the performance of structurally disordered semiconductors such as amorphous silicon and organic semiconductors. However, in the past years, high performance organic solar cells have emerged showing a continuously reduced amount of energetic disorder. While searching for future high efficiency material systems, it is therefore important to correctly characterize this energetic disorder. While there are several techniques in literature, the most common approaches to probe the density of defect states are using optical excitation as in external quantum efficiency measurements or sequential filling of the tail states by applying an external voltage as in admittance spectroscopy. A metanalysis of available literature as well as our experiments using four characterization techniques on two material systems reveal that electrical, voltage-dependent measurements frequently yield higher values of energetic disorder than optical measurements. With drift-diffusion simulations, we demonstrate that the approaches probe different energy ranges of the subband-gap density of states. We further explore the limitations of the techniques and find that extraction of information from a capacitance-voltage curve can be inhibited by an internal series resistance. Thereby, we explain the discrepancies between measurements techniques with sensitivity to different energy ranges and electronic parameters.

preprint2022arXiv

Intensity Modulated Photocurrent Microspectrosopy for Next Generation Photovoltaics

In this report, we describe a large-area Laser Beam Induced Current (LBIC) microscope that has been adapted to perform Intensity Modulated Photocurrent Spectroscopy in an imaging mode combined with automated J-V electrical characterization. Henceforth we refer to the method as either Intensity Modulated Photocurrent Micro-spectroscopy or simply IMPS microscopy. Microscopy based IMPS aims to use the localised frequency response to correlate the optoelectrical response with a particular interface, bulk material, specific transport layer or transport parameter. The system developed here is specifically designed to track the decomposition of organic solar cells including hybrid-inorganic PSCs during long-term exposure to quantities such as light, oxygen, moisture, and heat

preprint2022arXiv

Interpretation of Mott-Schottky Plots of Photoanodes for Water Splitting

A large body of literature reports that both bismuth vanadate and haematite photoanodes are semiconductors with an extremely high doping density between 10^18-10^21 cm^-3. Such values are obtained from Mott-Schottky plots by assuming that the measured capacitance is dominated by the capacitance of the depletion layer formed by the doping density within the photoanode. In this work, we show that such an assumption is erroneous in many cases because the injection of electrons from the collecting contact creates a ubiquitous capacitance step that is very difficult to distinguish from that of the depletion layer. Based on this reasoning, we derive an analytical resolution limit that is independent of the assumed active area and surface roughness of the photoanode, below which doping densities cannot be measured in a capacitance measurement. We find that the reported doping densities in literature lie very close to this value and therefore conclude that there is no credible evidence from capacitance measurements that confirms that bismuth vanadate and haematite photoanodes contain high doping densities.