Researcher profile

Benjamin Klingebiel

Benjamin Klingebiel contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2023arXiv

Comparing Methods of Characterizing Energetic Disorder in Organic Solar Cells

Energetic disorder has been known for decades to limit the performance of structurally disordered semiconductors such as amorphous silicon and organic semiconductors. However, in the past years, high performance organic solar cells have emerged showing a continuously reduced amount of energetic disorder. While searching for future high efficiency material systems, it is therefore important to correctly characterize this energetic disorder. While there are several techniques in literature, the most common approaches to probe the density of defect states are using optical excitation as in external quantum efficiency measurements or sequential filling of the tail states by applying an external voltage as in admittance spectroscopy. A metanalysis of available literature as well as our experiments using four characterization techniques on two material systems reveal that electrical, voltage-dependent measurements frequently yield higher values of energetic disorder than optical measurements. With drift-diffusion simulations, we demonstrate that the approaches probe different energy ranges of the subband-gap density of states. We further explore the limitations of the techniques and find that extraction of information from a capacitance-voltage curve can be inhibited by an internal series resistance. Thereby, we explain the discrepancies between measurements techniques with sensitivity to different energy ranges and electronic parameters.

preprint2021arXiv

Interface Optimization via Fullerene Blends Enables Open-Circuit Voltages of 1.35 V in CH3NH3Pb(I0.8Br0.2)3 Solar Cells

Non-radiative recombination processes are the biggest hindrance to approaching the radiative limit of the open-circuit voltage for wide-band gap perovskite solar cells. In addition, to high bulk quality, good interfaces and good energy level alignment for majority carriers at charge transport layer-absorber interfaces are crucial to minimize non-radiative recombination pathways. By tuning the lowest-unoccupied molecular-orbital of electron transport layers via the use of different fullerenes and fullerene blends, we demonstrate open-circuit voltages exceeding 1.35 V in CH3NH3Pb(I0.8Br0.2)3 device. Further optimization of mobility in binary fullerenes electron transport layer can boost the power conversion efficiency as high as 18.6%. We note in particular that the Voc-fill factor product is > 1.085 V, which is the highest value reported for halide perovskites with this band gap.