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Samuel Peana

Samuel Peana contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2022arXiv

Engineering the Temporal Dynamics with Fast and Slow Materials for All-Optical Switching

All optical switches offer advanced control over the properties of light at ultrafast timescales using optical pulses as both the signal and the control. Limited only by material response times, these switches can operate at terahertz speeds, essential for technology-driven applications such as all-optical signal processing and ultrafast imaging, as well as for fundamental studies such as frequency translation and novel optical media concepts such as photonic time crystals. In conventional systems, the switching time is determined by the relaxation response of a single active material, which is challenging to adjust dynamically. This work demonstrates that the zero-to-zero response time of an all-optical switch can instead be varied through the combination of so-called fast and slow materials in a single device. When probed in the epsilon-near-zero operational regime of a material with a slow response time, namely, plasmonic titanium nitride, the switch exhibits a relatively slow, nanosecond response time. The response time then decreases reaching the picosecond time scale in the ENZ regime of the faster material, namely, aluminum-doped zinc oxide. Overall, the response time of the switch is shown to vary by two orders of magnitude in a single device and can be selectively controlled through the interaction of the probe signal with the constituent materials. The ability to adjust the switching speed by controlling the light-matter interaction in a multi-material structure provides an additional degree of freedom in all-optical switch design. Moreover, the proposed approach utilizes slower materials that are very robust and allow to enhance the field intensities while faster materials ensure an ultrafast dynamic response. The proposed control of the switching time could lead to new functionalities within key applications in multiband transmission, optical computing, and nonlinear optics.

preprint2022arXiv

Gaussian dispersion analysis in the time domain: efficient conversion with Padé approximants

We present an approach for adapting the Gaussian dispersion analysis (GDA) of optical materials to time-domain simulations. Within a GDA model, the imaginary part of a measured dielectric function is presented as a sum of Gaussian absorption terms. Such a simple model is valid for materials where inhomogeneous broadening is substantially larger than the homogeneous linewidth. The GDA model is the essential broadband approximation for the dielectric function of many glasses, polymers, and other natural and artificial materials with disorder. However, efficient implementation of this model in time-domain full-wave electromagnetic solvers has never been fully achieved. We start with a causal form of an isolated oscillator with Gaussian-type absorption - Causal Dawson-Gauss oscillator. Then, we derive explicit analytical formulas to implement the Gaussian oscillator in a finite-difference time-domain (FDTD) solver with minimal use of memory and floating point operations. The derivation and FDTD implementation employ our generalized dispersive material (GDM) model - a universal, modular approach to describing optical dispersion with Padé approximants. We share the FDTD prototype codes that include automated generation of the approximants and a universal FDTD dispersion implementation that employs various second-order accurate numerical schemes. The codes can be used with non-commercial solvers and commercial software for time-domain simulations of light propagation in dispersive media, which are experimentally characterized with GDA models.

preprint2021arXiv

Room temperature single-photon emitters in silicon nitride

Single-photon emitters are essential for enabling several emerging applications in quantum information technology, quantum sensing and quantum communication. Scalable photonic platforms capable of hosting intrinsic or directly embedded sources of single-photon emission are of particular interest for the realization of integrated quantum photonic circuits. Here, we report on the first-time observation of room-temperature single-photon emitters in silicon nitride (SiN) films grown on silicon dioxide substrates. As SiN has recently emerged as one of the most promising materials for integrated quantum photonics, the proposed platform is suitable for scalable fabrication of quantum on-chip devices. Photophysical analysis reveals bright (>$10^5$ counts/s), stable, linearly polarized, and pure quantum emitters in SiN films with the value of the second-order autocorrelation function at zero time delay $g^{(2)}(0)$ below 0.2 at room temperatures. The emission is suggested to originate from a specific defect center in silicon nitride due to the narrow wavelength distribution of the observed luminescence peak. Single-photon emitters in silicon nitride have the potential to enable direct, scalable and low-loss integration of quantum light sources with the well-established photonic on-chip platform.