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Alexander Kildishev

Alexander Kildishev contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2022arXiv

Gaussian dispersion analysis in the time domain: efficient conversion with Padé approximants

We present an approach for adapting the Gaussian dispersion analysis (GDA) of optical materials to time-domain simulations. Within a GDA model, the imaginary part of a measured dielectric function is presented as a sum of Gaussian absorption terms. Such a simple model is valid for materials where inhomogeneous broadening is substantially larger than the homogeneous linewidth. The GDA model is the essential broadband approximation for the dielectric function of many glasses, polymers, and other natural and artificial materials with disorder. However, efficient implementation of this model in time-domain full-wave electromagnetic solvers has never been fully achieved. We start with a causal form of an isolated oscillator with Gaussian-type absorption - Causal Dawson-Gauss oscillator. Then, we derive explicit analytical formulas to implement the Gaussian oscillator in a finite-difference time-domain (FDTD) solver with minimal use of memory and floating point operations. The derivation and FDTD implementation employ our generalized dispersive material (GDM) model - a universal, modular approach to describing optical dispersion with Padé approximants. We share the FDTD prototype codes that include automated generation of the approximants and a universal FDTD dispersion implementation that employs various second-order accurate numerical schemes. The codes can be used with non-commercial solvers and commercial software for time-domain simulations of light propagation in dispersive media, which are experimentally characterized with GDA models.

preprint2022arXiv

Tailoring the Thickness-Dependent Optical Properties of Conducting Nitrides and Oxides for Epsilon-Near-Zero-Enhanced Photonic Applications

The unique properties of the emerging photonic materials - conducting nitrides and oxides - especially their tailorability, large damage thresholds, and the so-called epsilon-near-zero (ENZ) behavior, have enabled novel photonic phenomena spanning optical circuitry, tunable metasurfaces, and nonlinear optical devices. This work explores direct control of the optical properties of polycrystalline titanium nitride (TiN) and aluminum-doped zinc oxide (AZO) by tailoring the film thickness, and their potential for ENZ-enhanced photonic applications. We demonstrate that TiN-AZO bilayers act as Ferrell-Berreman metasurfaces with thickness-tailorable epsilon-near-zero resonances in the AZO films operating in the telecom wavelengths spanning from 1470 to 1750 nm. The bilayer stacks also act as strong light absorbers in the ultraviolet regime employing the radiative ENZ modes and the Fabry-Perot modes in the constituent TiN films. The studied Berreman metasurfaces exhibit optically-induced reflectance modulation of 15% with picosecond response-time. Together with the optical response tailorability of conducting oxides and nitrides, utilizing the field-enhancement near the tunable ENZ regime could enable a wide range of nonlinear optical phenomena, including all-optical switching, time refraction, and high-harmonic generation.

preprint2020arXiv

Extraordinarily Large Permittivity Modulation in Zinc Oxide for Dynamic Nanophotonics

The dielectric permittivity of a material encapsulates the essential physics of light-matter interaction into the material's local response to optical excitation. Dynamic, photo-induced modulation of the permittivity can enable an unprecedented level of control over the phase, amplitude, and polarization of light. Therefore, the detailed dynamic characterization of technology-relevant materials with substantially tunable optical properties and fast response times is a crucial step in the realization of tunable optical devices. This work reports on the extraordinarily large permittivity changes in zinc oxide thin films (up to -3.6 relative change in the real part of the dielectric permittivity at 1600 nm wavelength) induced by optically generated free carriers. We demonstrate broadband reflectance modulation up to 70 percent in metal-backed oxide mirrors at the telecommunication wavelengths, with picosecond-scale relaxation times. The epsilon near zero points of the films can be dynamically shifted from 8.5 microns to 1.6 microns by controlling the pump fluence. Finally, we show that the modulation can be selectively enhanced at specific wavelengths employing metal-backed ZnO disks while maintaining picosecond-scale switching times. This work provides insights into the free-carrier assisted permittivity modulation in zinc oxide and could enable the realization of novel dynamic devices for beam-steering, polarizers, and spatial light modulators.