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Source author record

Salvy P. Russo

Salvy P. Russo appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record
cond-mat.mes-hallquant-phcond-mat.mtrl-scicond-mat.supr-concond-mat.str-elDistributed, Parallel, and Cluster Computingphysics.chem-phSoftware Engineering

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Published work

13 published item(s)

preprint2021arXiv

Accurate calculation of excitonic signatures in the absorption spectrum of BiSBr using semiconductor Bloch equations

In order to realize the significant potential of optical materials such as metal halides, computational techniques which give accurate optical properties are needed, which can work hand-in-hand with experiments to generate high efficiency devices. In this work a computationally efficient technique based on semiconductor Bloch equations (SBEs) is developed and applied to the material BiSBr. This approach gives excellent agreement with the experimental optical gap, and also agrees closely with the excitonic stabilisation energy and the absorption spectrum computed using the far more computationally demanding \textit{ab initio} Bethe-Salpeter approach. The SBE method is a good candidate for theoretical spectroscopy on large- or low dimensional systems which are too computationally expensive for an \textit{ab initio} treatment.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Bright $\mathrm{\textit{ab-initio}}$ photoluminescence of NV+ in diamond

The positively charged nitrogen vacancy (NV+) centre in diamond has been traditionally treated as a dark state due to the experimental lack of an optical signature. Recent computational studies have shown that it is possible for the NV+ defect to have an excited state transition equivalent to that of the negatively charged (NV-) centre, but no PL predictions have been reported so far. We report the first $\mathrm{\textit{ab-initio}}$ calculation showing that the NV+ center presents quantum emission, with zero phonon line at 765 nm and a non-zero transition dipole moment, approximately 4x smaller than the transition dipole moment of NV-. We calculate the energy levels of the multielectron states under time-dependent density functional theory (singlet and triplet E states), and using our recently developed frequency cutoff method, we predict the full PL spectrum. Our results suggest that this state cannot be considered intrinsically 'dark' and charge specific quenching mechanisms should be investigated as the cause of the lack of optical activity in experimental characterizations.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

An $\mathrm{\textit{ab-initio}}$ effective solid state photoluminescence by frequency constraint of cluster calculation

Measuring the photoluminescence of defects in crystals is a common experimental technique for analysis and identification. However, current theoretical simulations typically require the simulation of a large number of atoms to eliminate finite size effects, which discourages computationally expensive excited state methods. We show how to extract the room-temperature photoluminescence spectra of defect centres in bulk from an $\mathrm{\textit{ab-initio}}$ simulation of a defect in small clusters. The finite size effect of small clusters manifests as strong coupling to low frequency vibrational modes. We find that removing vibrations below a cutoff frequency determined by constrained optimization returns the main features of the solid state photoluminescence spectrum. This strategy is illustrated for an NV$^{-}$ defect in diamond, presenting a connection between defects in solid state and clusters; the first vibrationally resolved $\mathrm{\textit{ab-initio}}$ photoluminescence spectrum of an NV$^{-}$ defect in a nanodiamond; and an alternative technique for simulating photoluminescence for solid state defects utilizing more accurate excited state methods.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Computational investigations of dispersion interactions between small molecules and graphene-like flakes

In this work, we investigate dispersion interactions in a selection of atomic, molecular, and molecule-surface systems, comparing high-level correlated methods with empirically-corrected density functional theory (DFT). We assess the efficacy of functionals commonly used for surface-based calculations, with and without the D3 correction of Grimme. We find that the inclusion of the correction is essential to get meaningful results, but there is otherwise little to distinguish between the functionals. We also present coupled-cluster quality interaction curves for \ce{H2} and \ce{NO2} interacting with large carbon flakes, acting as models for graphene surfaces, using novel absolutely localised molecular orbital based methods. These calculations demonstrate that the problems with empirically-corrected DFT when investigating dispersion appear to compound as the system size increases, with important implications for future computational studies of molecule-surface interactions.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Correlating the Energetics and Atomic Motions of the Metal-Insulator Transition of M1 Vanadium Dioxide

Materials that undergo reversible metal-insulator transitions are obvious candidates for new generations of devices. For such potential to be realised, the underlying microscopic mechanisms of such transitions must be fully determined. In this work we probe the correlation between the energy landscape and electronic structure of the metal-insulator transition of vanadium dioxide and the atomic motions occurring using first principles calculations and high resolution X-ray diffraction. Calculations find an energy barrier between the high and low temperature phases corresponding to contraction followed by expansion of the distances between vanadium atoms on neighbouring sub-lattices. X-ray diffraction reveals anisotropic strain broadening in the low temperature structure's crystal planes, however only for those with spacings affected by this compression/expansion. GW calculations reveal that traversing this barrier destabilises the bonding/anti-bonding splitting of the low temperature phase. This precise atomic description of the origin of the energy barrier separating the two structures will facilitate more precise control over the transition characteristics for new applications and devices.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Hubbard Physics in the PAW GW Approximation

It is demonstrated that the signatures of the Hubbard Model in the strongly interacting regime can be simulated by modifying the screening in the limit of zero wavevector in Projector-Augmented Wave GW calculations for systems without significant nesting. This modification, when applied to the Mott insulator CuO, results in the opening of the Mott gap by the splitting of states at the Fermi level into upper and lower Hubbard bands, and exhibits a giant transfer of spectral weight upon electron doping. The method is also employed to clearly illustrate that the M$_{1}$ and M$_{2}$ forms of vanadium dioxide are fundamentally different types of insulator. Standard GW calculations are sufficient to open a gap in M$_{1}$ VO$_{2}$, which arise from the Peierls pairings filling the valence band, creating homopolar bonds. The valence band wavefunctions are stabilized with respect to the conduction band, reducing polarizability and pushing the conduction band eigenvalues to higher energy. The M$_{2}$ structure however opens a gap from strong on-site interactions; it is a Mott insulator.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

A 3D investigation of delocalised oxygen two-level defects in Josephson junctions

Environmental two-level systems (TLS) have been identified as significant decoherence sources in Josephson junction (JJ) based circuits. For such quantum devices to be functional, the removal or control of the TLS is a necessity. Understanding the microscopic origins of the 'strongly coupled' TLS type is one current path of investigation to that end. The delocalized oxygen model suggests the atomic position of an oxygen atom is spatially delocalized in the oxide forming the JJ barrier. In this report we extend this model from its previous 2+1D construction to a complete 3D description using a Wick-rotated time-dependent Schrodinger equation to solve for time-independent solutions in three dimensions. We compute experimentally observable parameters for phase qubits and compare the results to the 2+1D framework. We devise a Voronoi classification scheme to investigate oxygen atoms delocalizing within strained and non-strained crystalline lattices, as well as realistic atomic positions a JJ amorphous tunnel barrier constructed in previous density functional studies.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Chiminey: Reliable Computing and Data Management Platform in the Cloud

The enabling of scientific experiments that are embarrassingly parallel, long running and data-intensive into a cloud-based execution environment is a desirable, though complex undertaking for many researchers. The management of such virtual environments is cumbersome and not necessarily within the core skill set for scientists and engineers. We present here Chiminey, a software platform that enables researchers to (i) run applications on both traditional high-performance computing and cloud-based computing infrastructures, (ii) handle failure during execution, (iii) curate and visualise execution outputs, (iv) share such data with collaborators or the public, and (v) search for publicly available data.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Constructing ab initio models of ultra-thin Al-AlOx-Al barriers

The microscopic structure of ultra-thin oxide barriers often plays a major role in modern nano-electronic devices. In the case of superconducting electronic circuits, their operation depends on the electrical non-linearity provided by one or more such oxide layers in the form of ultra-thin tunnel barriers (also known as Josephson junctions). Currently available fabrication techniques manufacture an amorphous oxide barrier, which is attributed as a major noise source within the device. The nature of this noise is currently an open question and requires both experimental and theoretical investigation. Here, we present a methodology for constructing atomic scale computational models of Josephson junctions using a combination of molecular mechanics, empirical and ab initio methods. These junctions consist of ultra-thin amorphous aluminium-oxide layers sandwiched between crystalline aluminium. The stability and structure of these barriers as a function of density and stoichiometry are investigated, which we compare to experimentally observed parameters

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Atomic delocalisation as a microscopic origin of two-level defects in Josephson junctions

Identifying the microscopic origins of decoherence sources prevalent in Josephson junction based circuits is central to their use as functional quantum devices. Focussing on so called "strongly coupled" two-level defects, we construct a theoretical model using the atomic position of the oxygen which is spatially delocalised in the oxide forming the Josephson junction barrier. Using this model, we investigate which atomic configurations give rise to two-level behaviour of the type seen in experiments. We compute experimentally observable parameters for phase qubits and examine defect response under the effects of applied electric field and strain.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Electronic properties of delta-doped phosphorus layers in silicon and germanium

The Thomas-Fermi-Dirac (TFD) approximation and an sp3d5s* tight binding method were used to calculate the electronic properties of a delta-doped phosphorus layer in silicon. This self-consistent model improves on the computational efficiency of "more rigorous" empirical tight binding and ab initio density functional theory models without sacrificing the accuracy of these methods. The computational efficiency of the TFD model provides improved scalability for large multi-atom simulations, such as of nanoelectronic devices that have experimental interest. We also present the first theoretically calculated electronic properties of a delta-doped phosphorus layer in germanium as an application of this TFD model.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Ab initio calculation of valley splitting in monolayer δ-doped phosphorus in silicon

The differences in energy between electronic bands due to valley splitting are of paramount importance in interpreting transport spectroscopy experiments on state-of-the-art quantum devices defined by scanning tunneling microscope lithography. We develop a plane-wave density functional theory description of these systems which is size-limited due to computational tractability. We then develop a less resource-intensive alternative via localized basis functions, retaining the physics of the plane-wave description, and extend this model beyond the capability of plane-wave methods to determine the ab initio valley splitting of well-isolated δ-layers. In obtaining agreement between plane-wave and delocalized methods, we show that the valley splitting has been overestimated in previous ab initio calculations by more than 50%.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Delocalised oxygen as the origin of two-level defects in Josephson junctions

One of the key problems facing superconducting qubits and other Josephson junction devices is the decohering effects of bi-stable material defects. Although a variety of phenomenological models exist, the true microscopic origin of these defects remains elusive. For the first time we show that these defects may arise from delocalisation of the atomic position of the oxygen in the oxide forming the Josephson junction barrier. Using a microscopic model, we compute experimentally observable parameters for phase qubits. Such defects are charge neutral but have non-zero response to both applied electric field and strain. This may explain the observed long coherence time of two-level defects in the presence of charge noise, while still coupling to the junction electric field and substrate phonons.

0 citations0 reviewsNo code linkedOpen access