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Researcher profile

Saiful I. Khondaker

Saiful I. Khondaker contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-sci

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Published work

19 published item(s)

preprint2014arXiv

Electrical property tuning via defect engineering of single layer MoS2 by oxygen plasma

We demonstrate that the electrical property of a single layer molybdenum disulfide (MoS2) can be significantly tuned from semiconducting to insulating regime via controlled exposure to oxygen plasma. The mobility, on-current and resistance of single layer MoS2 devices were varied up to four orders of magnitude by controlling the plasma exposure time. Raman spectroscopy, X-ray photoelectron spectroscopy and density functional theory studies suggest that the significant variation of electronic properties is caused by the creation of insulating MoO3-rich disordered domains in the MoS2 sheet upon oxygen plasma exposure, leading to an exponential variation of resistance and mobility as a function of plasma exposure time. The resistance variation calculated using an effective medium model is in excellent agreement with the measurements. The simple approach described here can be used for the fabrication of tunable two dimensional nanodevices on MoS2 and other transition metal dichalcogenides.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Photoluminescence quenching in gold - MoS2 hybrid nanoflakes

Achieving tunability of two dimensional (2D) transition metal dichalcogenides (TMDs) functions calls for the introduction of hybrid 2D materials by means of localized interactions with zero dimensional (0D) materials. A metal-semiconductor interface, as in gold (Au) - molybdenum disulfide (MoS2), is of great interest from the standpoint of fundamental science as it constitutes an outstanding platform to investigate plasmonic-exciton interactions and charge transfer. The applied aspects of such systems introduce new options for electronics, photovoltaics, detectors, gas sensing, catalysis, and biosensing. Here we consider pristine MoS2 and study its interaction with Au nanoislands, resulting in local variations of photoluminescence (PL) associated with various Au-MoS2 hybrid configurations. By controllably depositing monolayers of Au on MoS2 to form Au nanostructures of given size and thickness, we investigate the electronic structure of the resulting hybrid systems. We present strong evidence of PL quenching of MoS2 as a result of charge transfer from MoS2 to Au: p-doping of MoS2. The results suggest new avenues for 2D nanoelectronics, active control of transport or catalytic properties.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Photoluminescence Quenching in Single-layer MoS2 via Oxygen Plasma Treatment

By creating defects via oxygen plasma treatment, we demonstrate optical properties variation of single-layer MoS2. We found that, with increasing plasma exposure time, the photoluminescence (PL) evolves from very high intensity to complete quenching, accompanied by gradual reduction and broadening of MoS2 Raman modes, indicative of distortion of the MoS2 lattice after oxygen bombardment. X-ray photoelectron spectroscopy study shows the appearance of Mo6+ peak, suggesting the creation of MoO3 disordered regions in the MoS2 flake. Finally, using band structure calculations, we demonstrate that the creation of MoO3 disordered domains upon exposure to oxygen plasma leads to a direct to indirect bandgap transition in single-layer MoS2, which explains the observed PL quenching.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Recent progress in parallel fabrication of individual single walled carbon nanotube devices

Single walled carbon nanotubes (SWNTs) have attracted immense research interest because of their remarkable physical and electronic properties. In particular, electronic devices fabricated using individual SWNT have shown outstanding device performance surpassing those of Si. However, for the widespread application of SWNTs based electronic devices, parallel fabrication techniques along with Complementary Metal Oxide (CMOS) compatibility are required. One technique that has the potential to integrate SWNTs at the selected position of the circuit in a parallel fashion is AC dielectrophoresis (DEP). In this paper, we review recent progress in the parallel fabrication of SWNT-based devices using DEP. The review begins with a theoretical background for the DEP and then discusses various parameters affecting DEP assembly of SWNTs. We also review the electronic transport properties of the DEP assembled devices and show that high performance devices can be fabricated using DEP. The technique for fabricating all semiconducting field effect transistor using DEP is also reviewed. Finally, we discuss the challenges and opportunities for the DEP assembly of SWNTs.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

High Performance Semiconducting Enriched Carbon Nanotube Thin Film Transistors Using Metallic Carbon Nanotube Electrode

High-performance solution-processed short-channel carbon nanotube (CNT) thin film transistors (TFTs) are fabricated using densely aligned arrays of metallic CNTs (m-CNTs) as source and drain electrodes, and aligned arrays of semiconducting enriched CNTs (s-CNTs) as channel material. The electrical transport measurements at room temperature show that the m-CNT contacted s-CNT array devices with a 2 um channel length perform superiorly to those of control Pd contacted s-CNT devices. The m-CNT contacted devices exhibit a maximum (average) on-conductance of 36.5 uS (19.2 uS), transconductance of 2.6 uS (1.2 uS), mobility of 51 cm2/Vs (25 cm2/Vs), and current on-off ratio of 1.1x10E6 (2.5x10E5). These values are almost an order of magnitude higher than that of control Pd contacted devices with the same channel length and s-CNT linear density. The low temperature charge transport measurements suggest that these improved performances are due to the lower charge injection barrier of m-CNT/s-CNT array devices compared to Pd/s-CNT array devices. We attribute the lower injection barrier to unique geometry of our devices. In addition to using semiconducting enriched CNT, our results suggest that using metallic CNT as an electrode can significantly enhance the performance of CNT TFTs.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Efros-Shklovskii variable range hopping in reduced graphene oxide sheets of varying carbon sp2 fraction

We investigate the low temperature electron transport properties of chemically reduced graphene oxide (RGO) sheets with different carbon sp2 fractions of 55 to 80 %. We show that in the low bias (Ohmic) regime, the temperature (T) dependent resistance (R) of all the devices follow Efros-Shklovskii variable range hopping (ES-VRH) R ~ exp[(T(ES)/T)^1/2] with T(ES) decreasing from 30976 to 4225 K and electron localization length increasing from 0.46 to 3.21 nm with increasing sp2 fraction. From our data, we predict that for the temperature range used in our study, Mott-VRH may not be observed even at 100 % sp2 fraction samples due to residual topological defects and structural disorders. From the localization length, we calculate a bandgap variation of our RGO from 1.43 to 0.21 eV with increasing sp2 fraction from 55 to 80 % which agrees remarkably well with theoretical prediction. We also show that, in the high bias regime, the hopping is field driven and the data follow R ~ exp[(E(0)/E)^1/2] providing further evidence of ES-VRH.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

The Effect of Carbon Nanotube/Organic Semiconductor Interfacial Area on the Performance of Organic Transistors

We show that the performance of pentacene transistors can be significantly improved by maximizing the interfacial area at single walled carbon nanotube (SWCNT)/pentacene. The interfacial areas are varied by anchoring short SWCNTs of different densities (0-30/μm) to the Pd electrodes. The average mobility is increased three, six and nine times for low, medium and high SWCNT densities, respectively, compared to the devices with zero SWCNT. The current on-off ratio and on-current are increased up to 40 times and 20 times with increasing the SWCNT density. We explain the improved device performance using reduced barrier height of SWCNT/pentacene interface.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

A general approach for high yield fabrication of CMOS compatible all semiconducting carbon nanotube field effect transistors

We report strategies of achieving both high assembly yield of carbon nanotubes at selected position of the circuit via dielectrophoresis (DEP) and field effect transistor (FET) yield using semiconducting enriched single walled carbon nanotube (s-SWNT) aqueous solution. When the DEP parameters were optimized for the assembly of individual s-SWNT, 97% of the devices show FET behavior with a maximum mobility of 210 cm2/Vs, on-off current ratio ~ 106 and on conductance up to 3 μS, however with an assembly yield of only 33%. As the DEP parameters were optimized so that 1-5 s-SWNTs are connected per electrode pair, the assembly yield was almost 90% with ~ 90% of these assembled devices demonstrating FET behavior. Further optimization gives an assembly yield of 100% with up to 10 SWNT/site, however with a reduced FET yield of 59%. Improved FET performance including higher current on-off ratio and high switching speed were obtained by integrating a local Al2O3 gate to the device. Our 90% FET with 90% assembly yield is the highest reported so far for carbon nanotube devices. Our study provides a pathway which could become a general approach for the high yield fabrication of CMOS compatible carbon nanotube FETs.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Correlated breakdown of carbon nanotubes in an ultra-high density aligned array

We demonstrate that in a densely packed aligned array of single walled carbon nanotubes, the breakdown of one nanotube leads to a highly correlated breakdown of neighboring nanotubes, thereby producing a nano-fissure. We show that the origin of the correlation is the electrostatic field of the broken nanotubes that produces locally inhomogeneous current and Joule heating distributions in the neighboring intact nanotubes triggering their breakdowns in the vicinity of the broken nanotubes. Our results suggest that the densely aligned array behaves like a correlated solid.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Coulomb Blockade and Hopping Conduction in Graphene Quantum Dots Array

We show that the low temperature electron transport properties of chemically functionalized graphene can be explained as sequential tunneling of charges through a two dimensional array of graphene quantum dots (GQD). Below 15 K, a total suppression of current due to Coulomb blockade through GQD array was observed. Temperature dependent current-gate voltage characteristics show Coulomb oscillations with energy scales of 6.2-10 meV corresponding to GQD sizes of 5-8 nm while resistance data exhibit an Efros-Shklovskii variable range hopping arising from structural and size induced disorder.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Huge Volume Expansion and Structural Transformation of Carbon Nanotube Aligned Arrays during Electrical Breakdown in Vacuum

We observed a huge volume expansion of aligned single walled carbon nanotube (SWNT) arrays accompanied by structural transformation during electrical breakdown in vacuum. The SWNT arrays were assembled between prefabricated Pd source and drain electrodes of 2 μm separation on Si/SiO_2 substrate via dielectrophoresis. At high electrical field, the SWNT arrays erupt into large mushroom-like structure. Systematic studies with controlled electrical bias show that above a certain field SWNTs swell and transform to nanoparticles and flower-like structures with small volume increase. Further increase in electrical bias and repeated sweeping results into amorphous carbon as determined from scanning and transmission electron microscopy (TEM). Cross sectional studies using focused ion beam and TEM show the height of 2-3 nm SWNT array increased to about 1 μm with a volume gain of ~ 400 times. The electron energy loss spectroscopy reveals that graphitic sp^2 networks of SWNTs are transformed predominantly to sp^3. The current-voltage measurements also show an increase in the resistance of the transformed structure.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Semiconducting enriched carbon nanotube align arrays of tunable density and their electrical transport properties

We demonstrate assembly of solution processed semiconducting enriched (99%) single walled carbon nanotubes (s-SWNT) in an array with varying linear density via ac-dielectrophoresis and investigate detailed electronic transport properties of the fabricated devices. We show that (i) the quality of the alignment varies with frequency of the applied voltage and that (ii) by varying the frequency and concentration of the solution, we can control the linear density of the s-SWNTs in the array from 1/μm to 25 /μm. The maximum linear density of 25 s-SWNT /\mum reported here is the highest for any aligned semiconducting array. The DEP assembled s-SWNT devices provide opportunity to investigate transport property of the arrays in the direct transport regime. Room temperature electron transport measurements of the fabricated devices show that with increasing nanotube density the device mobility increases while the current on-off ratio decreases dramatically. For the dense array, the device current density was 16 μA/μm, on-conductance was 390 μS, and sheet resistance was 30 kΩ/\square. These values are the best reported so far for any semiconducting nanotube array.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Ultra-high density alignment of carbon nanotubes array by dielectrophoresis

We report ultra-high density assembly of aligned single walled carbon nanotubes (SWNTs) two dimensional arrays via ac dielectrophoresis using high quality surfactant free and stable SWNT solutions. After optimization of frequency and trapping time, we can reproducibly control the linear density of the SWNT between prefabricated electrodes from 0.5 SWNT/\mum to more than 30 SWNT /\mum by tuning the concentration of the nanotubes in the solution. Our maximum density of 30 SWNT/\mum is the highest for aligned arrays via any solution processing technique reported so far. Further increase of SWNT concentration results dense array with multiple layers. We discuss how the orientation and density of the nanotubes vary with concentrations and channel lengths. Electrical measurement data show that the densely packed aligned arrays have low sheet resistances. Selective removal of metallic SWNTs via controlled electrical breakdown produced field effect transistors (FET) with high current on-off ratio. Ultra-high density alignment reported here will have important implications in fabricating high quality devices for digital and analog electronics.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

High yield fabrication of chemically reduced graphene oxide field effect transistors by dielectrophoresis

We demonstrate high yield fabrication of field effect transistors (FET) using chemically reduced graphene oxide (RGO) sheets suspended in water assembled via dielectrophoresis. The two terminal resistances of the devices were improved by an order of magnitude upon mild annealing at 200 0C in Ar/H2 environment for 1 hour. With the application of a backgate voltage, all of the devices showed FET behavior with maximum hole and electron mobilities of 4.0 and 1.5 cm2/Vs respectively. This study shows promise for scaled up fabrication of graphene based nanoelectronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Position dependent photodetector from large area reduced graphene oxide thin films

We fabricated large area infrared photodetector devices from thin film of chemically reduced graphene oxide (RGO) sheets and studied their photoresponse as a function of laser position. We found that the photocurrent either increases, decreases or remain almost zero depending upon the position of the laser spot with respect to the electrodes. The position sensitive photoresponse is explained by Schottky barrier modulation at the RGO film-electrode interface. The time response of the photocurrent is dramatically slower than single sheet of graphene possibly due to disorder from the chemically synthesis and interconnecting sheets.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Space charge limited conduction with exponential trap distribution in reduced graphene oxide sheets

We elucidate on the low mobility and charge traps of the chemically reduced graphene oxide (RGO) sheets by measuring and analyzing temperature dependent current-voltage characteristics. The RGO sheets were assembled between source and drain electrodes via dielectrophoresis. At low bias voltage the conduction is Ohmic while at high bias voltage and low temperatures the conduction becomes space charge limited with an exponential distribution of traps. We estimate an average trap density of 1.75x10^16 cm^-3. Quantitative information about charge traps will help develop optimization strategies of passivating defects in order to fabricate high quality solution processed graphene devices.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Diffusion mediated photoconduction in multi-walled carbon nanotube films

We investigated the mechanism for photoconduction in multi-walled carbon nanotube (MWNT) film of various electrode separations upon near infrared illumination. In addition to observing strong dependence of photocurrent on the position of the laser spot, we found that the time constant of the dynamic photoresponse is slow and increases with increasing electrode separations. The photoconduction mechanism can be explained by the Schottky barrier modulation at the metal-nanotube film interface and charge carrier diffusion through percolating MWNT networks.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Electronic transport properties of ternary Cd1-xZnxS nanowire network

We present electronic transport characteristics of ternary alloy Cd1-xZnxS nanowire networks in the dark and under white light illumination. Compared to the negligible dark current, we observed a photocurrent enhancement up to 4 orders of magnitude at intensity of 460 mW/cm2. The time constant of the dynamic photoresponse is ~5 sec. The current-voltage characteristics at different intensities show Ohmic behavior at low bias and space charge limited conduction (SCLC) at higher bias voltages. The SCLC behavior and slow time response indicate that the charge transport is dominated by tunneling at the percolating inter-nanowire junctions.

0 citations0 reviewsNo code linkedOpen access