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Researcher profile

Daeha Joung

Daeha Joung contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-sci

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Published work

6 published item(s)

preprint2012arXiv

Efros-Shklovskii variable range hopping in reduced graphene oxide sheets of varying carbon sp2 fraction

We investigate the low temperature electron transport properties of chemically reduced graphene oxide (RGO) sheets with different carbon sp2 fractions of 55 to 80 %. We show that in the low bias (Ohmic) regime, the temperature (T) dependent resistance (R) of all the devices follow Efros-Shklovskii variable range hopping (ES-VRH) R ~ exp[(T(ES)/T)^1/2] with T(ES) decreasing from 30976 to 4225 K and electron localization length increasing from 0.46 to 3.21 nm with increasing sp2 fraction. From our data, we predict that for the temperature range used in our study, Mott-VRH may not be observed even at 100 % sp2 fraction samples due to residual topological defects and structural disorders. From the localization length, we calculate a bandgap variation of our RGO from 1.43 to 0.21 eV with increasing sp2 fraction from 55 to 80 % which agrees remarkably well with theoretical prediction. We also show that, in the high bias regime, the hopping is field driven and the data follow R ~ exp[(E(0)/E)^1/2] providing further evidence of ES-VRH.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Coulomb Blockade and Hopping Conduction in Graphene Quantum Dots Array

We show that the low temperature electron transport properties of chemically functionalized graphene can be explained as sequential tunneling of charges through a two dimensional array of graphene quantum dots (GQD). Below 15 K, a total suppression of current due to Coulomb blockade through GQD array was observed. Temperature dependent current-gate voltage characteristics show Coulomb oscillations with energy scales of 6.2-10 meV corresponding to GQD sizes of 5-8 nm while resistance data exhibit an Efros-Shklovskii variable range hopping arising from structural and size induced disorder.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

High yield fabrication of chemically reduced graphene oxide field effect transistors by dielectrophoresis

We demonstrate high yield fabrication of field effect transistors (FET) using chemically reduced graphene oxide (RGO) sheets suspended in water assembled via dielectrophoresis. The two terminal resistances of the devices were improved by an order of magnitude upon mild annealing at 200 0C in Ar/H2 environment for 1 hour. With the application of a backgate voltage, all of the devices showed FET behavior with maximum hole and electron mobilities of 4.0 and 1.5 cm2/Vs respectively. This study shows promise for scaled up fabrication of graphene based nanoelectronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Space charge limited conduction with exponential trap distribution in reduced graphene oxide sheets

We elucidate on the low mobility and charge traps of the chemically reduced graphene oxide (RGO) sheets by measuring and analyzing temperature dependent current-voltage characteristics. The RGO sheets were assembled between source and drain electrodes via dielectrophoresis. At low bias voltage the conduction is Ohmic while at high bias voltage and low temperatures the conduction becomes space charge limited with an exponential distribution of traps. We estimate an average trap density of 1.75x10^16 cm^-3. Quantitative information about charge traps will help develop optimization strategies of passivating defects in order to fabricate high quality solution processed graphene devices.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Electronic transport properties of ternary Cd1-xZnxS nanowire network

We present electronic transport characteristics of ternary alloy Cd1-xZnxS nanowire networks in the dark and under white light illumination. Compared to the negligible dark current, we observed a photocurrent enhancement up to 4 orders of magnitude at intensity of 460 mW/cm2. The time constant of the dynamic photoresponse is ~5 sec. The current-voltage characteristics at different intensities show Ohmic behavior at low bias and space charge limited conduction (SCLC) at higher bias voltages. The SCLC behavior and slow time response indicate that the charge transport is dominated by tunneling at the percolating inter-nanowire junctions.

0 citations0 reviewsNo code linkedOpen access