BZPEERReading, trust and collaboration for research
Menu

Discover

GraphFollow connections around a paper, topic or saved view.

Workspaces

HomePick up where your research flow left off.InboxHandle requests, replies and notifications from one place.CollectionsCurate reading lists, evidence sets and shareable dossiers.ResearchSee your private provenance graph, trail and imports.CollaborationMove from discovery into focused discussion rooms.PublishDraft, preview and publish full-text research articles.

Network

ExpertsFind specialists worth following or asking for help.CommunitiesJoin research circles organized around shared work.PartnersSee external organizations active around the same topics.

Opportunities

ListingsBrowse roles, calls and collaborations with clearer fit signals.

Account

Log inReturn to your reading and collaboration workspace.Create accountStart saving work, following people and joining teams.
Log inCreate account

Researcher profile

Lei Zhai

Lei Zhai contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hall

Trust snapshot

Quick read

Trust 17 - Baseline
4works
0followers
1topics
4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Research graph

See the researcher in context

Open full explorer

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

4 published item(s)

preprint2011arXiv

Coulomb Blockade and Hopping Conduction in Graphene Quantum Dots Array

We show that the low temperature electron transport properties of chemically functionalized graphene can be explained as sequential tunneling of charges through a two dimensional array of graphene quantum dots (GQD). Below 15 K, a total suppression of current due to Coulomb blockade through GQD array was observed. Temperature dependent current-gate voltage characteristics show Coulomb oscillations with energy scales of 6.2-10 meV corresponding to GQD sizes of 5-8 nm while resistance data exhibit an Efros-Shklovskii variable range hopping arising from structural and size induced disorder.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

High yield fabrication of chemically reduced graphene oxide field effect transistors by dielectrophoresis

We demonstrate high yield fabrication of field effect transistors (FET) using chemically reduced graphene oxide (RGO) sheets suspended in water assembled via dielectrophoresis. The two terminal resistances of the devices were improved by an order of magnitude upon mild annealing at 200 0C in Ar/H2 environment for 1 hour. With the application of a backgate voltage, all of the devices showed FET behavior with maximum hole and electron mobilities of 4.0 and 1.5 cm2/Vs respectively. This study shows promise for scaled up fabrication of graphene based nanoelectronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Position dependent photodetector from large area reduced graphene oxide thin films

We fabricated large area infrared photodetector devices from thin film of chemically reduced graphene oxide (RGO) sheets and studied their photoresponse as a function of laser position. We found that the photocurrent either increases, decreases or remain almost zero depending upon the position of the laser spot with respect to the electrodes. The position sensitive photoresponse is explained by Schottky barrier modulation at the RGO film-electrode interface. The time response of the photocurrent is dramatically slower than single sheet of graphene possibly due to disorder from the chemically synthesis and interconnecting sheets.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Space charge limited conduction with exponential trap distribution in reduced graphene oxide sheets

We elucidate on the low mobility and charge traps of the chemically reduced graphene oxide (RGO) sheets by measuring and analyzing temperature dependent current-voltage characteristics. The RGO sheets were assembled between source and drain electrodes via dielectrophoresis. At low bias voltage the conduction is Ohmic while at high bias voltage and low temperatures the conduction becomes space charge limited with an exponential distribution of traps. We estimate an average trap density of 1.75x10^16 cm^-3. Quantitative information about charge traps will help develop optimization strategies of passivating defects in order to fabricate high quality solution processed graphene devices.

0 citations0 reviewsNo code linkedOpen access