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Saeedeh Farokhipoor

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cond-mat.mtrl-sci cond-mat.str-el

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preprint2020arXiv

Large magnetoelectric coupling in multiferroic oxide heterostructures assembled via epitaxial lift-off

The strain dependent functional properties of epitaxial transition metal oxide films can be significantly modified via substrate selection. However, large lattice mismatches preclude dislocation-free epitaxial growth on ferroelectric substrates, whose strain states are modified by applied electric fields. Here we overcome this mismatch problem by depositing an epitaxial film of ferromagnetic La0.7Sr0.3MnO3 on a single crystal substrate of well lattice matched SrTiO3 via a film of SrRuO3 that we subsequently dissolved, permitting the transfer of unstrained La0.7Sr0.3MnO3 to a ferroelectric substrate of 0.68Pb(Mg1/3Nb2/3)O3 0.32PbTiO3 in a different crystallographic orientation. Ferroelectric domain switching, and a concomitant ferroelectric phase transition, produced large non volatile changes of magnetization that were mediated by magnetic domain rotations at locations defined by the microstructure - as revealed via high resolution vector maps of magnetization constructed from photoemission electron microscopy data, with contrast from x-ray magnetic circular dichroism. In future, our method may be exploited to control functional properties in dislocation free epitaxial films of any composition.

preprint2019arXiv

Tunable resistivity exponents in the metallic phase of epitaxial nickelates

We report a detailed analysis of the electrical resistivity exponent of thin films of NdNiO3 as a function of epitaxial strain. Strain-free thin-films show a linear dependence of the resistivity vs temperature, consistent with a classical Fermi gas ruled by electron-phonon interactions. In addition, the apparent temperature exponent, n, can be tuned with the epitaxial strain between n= 1 and n= 3. We discuss the critical role played by quenched random disorder in the value of n. Our work shows that the assignment of Fermi/Non-Fermi liquid behaviour based on experimentally obtained resistivity exponents requires an in-depth analysis of the degree of disorder in the material.

preprint2012arXiv

Resistive switching in ferroelectric BiFeO3 by 1.7 eV change of the Schottky barrier height

Using metal-ferroelectric junctions as switchable diodes was proposed several decades ago. This was shown to actually work in PbZr(1-x)TixO3 (PZT) by Blom et al. [P.W. M. Blom et al., Phys. Rev. Lett. 73, 2107 (1994)], who reported switching in the rectification direction and changes of the current of about 2 orders of magnitude upon switching the polarization direction of the ferroelectric layer. This form of resistive switching enables the read out of a ferroelectric memory state at higher speed compared to the capacitive design, without destroying the information in each reading cycle. Recently, Jiang and coworkers have shown that these Schottky barrier effects are enormous in BiFeO3, giving thousand times more switched charge than found by in PZT [A.Q. Jiang. et al., Adv. Mat. 23, 1277 (2011)]. Here, by performing local conductivity measurements, we attribute this to a large change of the Schottky barrier height between the as-grown, down-polarized domains and the up-polarized domains. These measurements allow to estimate the relative effect of polarization charges and screening charges on the conduction through the ferroelectric.