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Researcher profile

Beatriz Noheda

Beatriz Noheda contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.str-elphysics.app-phphysics.chem-ph

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Published work

10 published item(s)

preprint2022arXiv

Ferroelastic domain walls in BiFeO$_3$ as memristive networks

Electronic conduction along individual domain walls (DWs) has been reported in BiFeO$_3$ (BFO) and other nominally insulating ferroelectrics. DWs in these materials separate regions of differently oriented electrical polarization (domains) and are just a few atoms wide, providing self-assembled nanometric conduction paths. In this work, it is shown that electronic transport is possible also from wall to wall through the dense network of as-grown DWs in BFO thin films. Electric field cycling at different points of the network, performed locally by conducting atomic force microscope (cAFM), induces resistive switching selectively at the DWs, both for vertical (single wall) and lateral (wall-to-wall) conduction. These findings are the first step towards investigating DWs as memristive networks for information processing and in-materio computing.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Phenomenological classification of metals based on resistivity

Efforts to understand metallic behaviour have led to important concepts such as those of strange metal, bad metal or Planckian metal. However, a unified description of metallic resistivity is still missing. An empirical analysis of a large variety of metals shows that the parallel resistor formalism used in the cuprates, which includes T-linear and T-quadratic dependence of the electron scattering rates, can be used to provide a phenomenological description of the electrical resistivity in all metals, where these two contributions are shown to correspond to the two first terms of a Taylor expansion of the resistivity, detached of their physics origin, and thus, valid for any metal. Here we show that the different metallic classes are then determined by the relative magnitude of these two components and the magnitude of the extrapolated residual resistivity. These two parameters allow to categorize a few systems that are notoriously hard to ascribe to one of the currently accepted metallic classes. This approach also reveals that the T-linear term has a common origin in all cases, strengthening the arguments that propose the universal character of the Planckian dissipation bound.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Guidelines for the stabilization of a polar rhombohedral phase in epitaxial Hf0.5Zr0.5O2 thin films

The unconventional Si-compatible ferroelectricity in hafnia-based systems, which becomes robust only at nanoscopic sizes, has attracted a lot of interest. While a metastable polar orthorhombic (o-) phase (Pca21) is widely regarded as the responsible phase for ferroelectricity, a higher energy polar rhombohedral (r-) phase is recently reported on epitaxial HfZrO4 (HZO) films grown on (001) SrTiO3 (R3m or R3), (0001) GaN (R3), and Si (111). Armed with results on these systems, here we report a systematic study leading towards identifying comprehensive global trends for stabilizing r-phase polymorphs in epitaxially grown HZO thin films (6 nm) on various substrates (perovskites, hexagonal and Si).

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Atomic Layer Deposition of SiO$_2$-GeO$_2$ multilayers

Despite its interest for CMOS applications, Atomic Layer Deposition (ALD) of GeO$_{2}$ thin films, by itself or in combination with SiO$_{2}$, has not been widely investigated yet. Here we report the ALD growth of SiO$_{2}$/GeO$_{2}$ multilayers on Silicon substrates using a so far unreported Ge precursor. The characterization of multilayers with various periodicities reveals successful layer-by-layer growth with electron density contrast and absence of chemical intermixing, down to a periodicity of 2 atomic layers.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Ferroelectric PbZr$_{1-x}$Ti$_x$O$_3$ by ethylene glycol-based chemical solution synthesis

We have investigated a water-stable sol-gel method based on ethylene glycol as a solvent and bridging ligand for the synthesis of ferroelectric lead zirconate titanate in bulk and thin film forms. This method offers lower toxicity of the solvent, higher stability towards atmospheric moisture and a simplified synthetic procedure compared to traditional sol-gel methods. Ceramic pellets of Nb-doped lead zirconate titanate (PNZT) in the rhombohedral phase were produced with high density and good piezoelectric properties, comparable to those reported in the literature and those found in commercial piezoelectric elements. In addition, a nine-layer thin film stack was fabricated from the same sol by spin coating onto platinized silicon substrates. The films were crack-free and showed a dense perovskite grain structure with a weak (111) orientation. Piezoelectric measurements of the film showed a piezoelectric coefficient comparable to literature values and good stability towards fatigue.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Structure and magnetic properties of epitaxial CaFe2O4 thin films

CaFe2O4 is a highly anisotropic antiferromagnet reported to display two spin arrangements with up-up-down-down (phase A) and up-down-up-down (phase B) configurations. The relative stability of these phases is ruled by the competing ferromagnetic and antiferromagnetic interactions between Fe3+ spins arranged in two different environments, but a complete understanding of the magnetic structure of this material does not exist yet. In this study we investigate epitaxial CaFe2O4 thin films grown on TiO2 (110) substrates by means of Pulsed Laser Deposition (PLD). Structural characterization reveals the coexistence of two out-of-plane crystal orientations and the formation of three in-plane oriented domains. The magnetic properties of the films, investigated macroscopically as well as locally, including highly sensitive Mossbauer spectroscopy, reveal the presence of just one order parameter showing long-range ordering below T = 185 K and the critical nature of the transition. In addition, a non-zero in-plane magnetization is found, consistent with the presence of uncompensated spins at phase or domain boundaries, as proposed for bulk samples.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Direct epitaxial growth of polar (1-x)HfO2-(x)ZrO2 ultra-thin films on Silicon

Ultra-thin Hf1-xZrxO2 films have attracted tremendous interest owing to their Si-compatible ferroelectricity arising from polar polymorphs. While these phases have been grown on Si as polycrystalline films, epitaxial growth was only achieved on non-Si substrates. Here we report direct epitaxy of polar phases on Si using pulsed laser deposition enabled via in situ scavenging of the native a-SiOx under ballistic conditions. On Si (111), polar rhombohedral (r)-phase and bulk monoclinic (m-) phase coexist, with the volume of the former increasing with increasing Zr concentration. R-phase is stabilized in the regions with a direct connection between the substrate and the film through the compressive strain provided by an interfacial crystalline c-SiO2 layer., The film relaxes to a bulk m-phase in regions where a-SiOx regrows. On Si (100), we observe polar orthorhombic o-phase coexisting with m-phase, stabilized by inhomogeneous strains at the intersection of monoclinic domains. This work provides fundamental insight into the conditions that lead to the preferential stabilization of r-, o- and m-phases.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Magneto-ionic control of spin polarization in magnetic tunnel junctions

Magnetic tunnel junctions (MTJs) with Hf0.5Zr0.5O2 barriers are reported to show both tunneling magnetoresistance effect (TMR) and tunneling electroresistance effect (TER), displaying four resistance states by magnetic and electric field switching. Here we show that, under electric field cycling of large enough magnitude, the TER can reach values as large as 10^6%. Moreover, concomitant with this TER enhancement, the devices develop electrical control of spin polarization, with sign reversal of the TMR effect. Currently, this intermediate state exists for a limited number of cycles and understanding the origin of these phenomena is key to improve its stability. The experiments presented here point to the magneto-ionic effect as the origin of the large TER and strong magneto-electric coupling, showing that ferroelectric polarization switching of the tunnel barrier is not the main contribution.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Stabilization of phase-pure rhombohedral HfZrO4 in Pulsed Laser Deposited thin films

Controlling the crystalline structure of Hafnium Zirconate and its epitaxial relationship to a semiconducting electrode has a high technological interest, as ferroelectric materials are key ingredients for emerging electronic devices. Using Pulsed Laser Deposition, a phase pure, ultra-thin film of HfZrO4 is grown epitaxially on a GaN (0001) / Si (111) template. Since standard microscopy techniques do not allow to determine with certitude the crystalline structure of the film due to the weak scattering of oxygen, differentiated differential phase contrast (DPC) Scanning Transmission Electron Microscopy is used to allow the direct imaging of oxygen columns in the film. Combined with X-Rays diffraction analysis, the polar nature and rhombohedral R3 symmetry of the film are demonstrated.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Tunable resistivity exponents in the metallic phase of epitaxial nickelates

We report a detailed analysis of the electrical resistivity exponent of thin films of NdNiO3 as a function of epitaxial strain. Strain-free thin-films show a linear dependence of the resistivity vs temperature, consistent with a classical Fermi gas ruled by electron-phonon interactions. In addition, the apparent temperature exponent, n, can be tuned with the epitaxial strain between n= 1 and n= 3. We discuss the critical role played by quenched random disorder in the value of n. Our work shows that the assignment of Fermi/Non-Fermi liquid behaviour based on experimentally obtained resistivity exponents requires an in-depth analysis of the degree of disorder in the material.

0 citations0 reviewsNo code linkedOpen access