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S. Y. Jang

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Published work

5 published item(s)

preprint2011arXiv

Charge states and magnetic ordering in LaMnO3/SrTiO3 superlattices

We investigated the magnetic and optical properties of [(LaMnO3)n/(SrTiO3)8]20 (n = 1, 2, and 8) superlattices grown by pulsed laser deposition. We found a weak ferromagnetic and semiconducting state developed in all superlattices. An analysis of the optical conductivity showed that the LaMnO3 layers in the superlattices were slightly doped. The amount of doping was almost identical regardless of the LaMnO3 layer thickness up to eight unit cells, suggesting that the effect is not limited to the interface. On the other hand, the magnetic ordering became less stable as the LaMnO3 layer thickness decreased, probably due to a dimensional effect.

preprint2011arXiv

Giant Flexoelectric Effect in Ferroelectric Epitaxial Thin Films

We report on nanoscale strain gradients in ferroelectric HoMnO3 epitaxial thin films, resulting in a giant flexoelectric effect. Using grazing-incidence in-plane X-ray diffraction, we measured strain gradients in the films, which were 6 or 7 orders of magnitude larger than typical values reported for bulk oxides. The combination of transmission electron microscopy, electrical measurements, and electrostatic calculations showed that flexoelectricity provides a means of tuning the physical properties of ferroelectric epitaxial thin films, such as domain configurations and hysteresis curves.

preprint2011arXiv

Step bunching-induced vertical lattice mismatch and crystallographic tilt in vicinal BiFeO3(001) films

Epitaxial (001) BiFeO3 thin films grown on vicinal SrTiO3 substrates are under large anisotropic stress from the substrates. The variations of the crystallographic tilt angle and the c lattice constant, caused by the lattice mismatch, along the film thickness were analyzed quantitatively using the X-ray diffraction technique. By generalizing the Nagai model, we estimated how step bunching resulted in the vertical lattice mismatch between adjacent BiFeO3 layers, which induced the strain relaxation and crystallographic tilt. The step bunching was confirmed by the increased terrace width on the BiFeO3 surface.

preprint2009arXiv

Electric-field-controlled directional growth of ferroelectric domains in multiferroic BiFeO3 films

We describe the directional growth of ferroelectric domains in a multiferroic BiFeO3 thin film, which was grown epitaxially on a vicinal (001) SrTiO3 substrate. A detailed structural analysis of the film shows that a strain gradient, which can create a symmetry breaking in a ferroelectric double well potential, causes ferroelectric domains to grow with preferred directionality under the influence of an electric field. Our results suggest the possibility of controlling the direction of domain growth with an electric field by imposing constraints on ferroelectric films, such as a strain gradient.

preprint2009arXiv

The electronic structure of epitaxially stabilized 5d perovskite Ca_{1-x}Sr_xIrO_3 (x = 0, 0.5, and 1) thin films: the role of strong spin-orbit coupling

We have investigated the electronic structure of meta-stable perovskite Ca1-xSrxIrO3 (x = 0, 0.5, and 1) thin films using transport measurements, optical spectroscopy, and first-principles calculations. We artificially fabricated the perovskite phase of Ca1-xSrxIrO3, which has a hexagonal or post perovskite crystal structure in bulk form, by growing epitaxial thin films on perovskite GdScO3 substrates using epi-stabilization technique. The transport properties of the perovskite Ca1-xSrxIrO3 films systematically changed from nearly insulating (or semi-metallic) for x = 0 to bad metallic for x = 1. Due to the extended wavefunctions, 5d electrons are usually delocalized. However, the strong spin-orbit coupling in Ca1-xSrxIrO3 results in the formation of effective total angular momentum Jeff = 1/2 and 3/2 states, which puts Ca1-xSrxIrO3 in the vicinity of a metal-insulator phase boundary. As a result, the electrical properties of the Ca1-xSrxIrO3 films are found to be sensitive to x and strain.