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T. W. Noh

T. W. Noh appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.str-elcond-mat.mes-hallcond-mat.supr-concond-mat.other

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Published work

28 published item(s)

preprint2016arXiv

Direct penetration of spin-triplet superconductivity into a ferromagnet in Au/SrRuO3/Sr2RuO4 junctions

Efforts have been ongoing to establish superconducting spintronics utilizing ferromagnet/superconductor heterostructures1. Previously reported devices are based on spin-singlet superconductors (SSCs), where the spin degree of freedom is lost. Spin-polarized supercurrent induction in ferromagnetic metals (FMs) is achieved even with SSCs, but only with the aid of interfacial complex magnetic structures, which severely affect information imprinted to the electron spin. Use of spin-triplet superconductors (TSCs) with active spins potentially overcomes this difficulty and further leads to novel functionalities. Here, we report spin-triplet superconductivity induction into a FM SrRuO3 from a leading TSC candidate Sr2RuO4, by fabricating microscopic devices using an epitaxial SrRuO3/Sr2RuO4 hybrid. The differential conductance, exhibiting Andreev-reflection features with multiple energy scales up to around half tesla, indicates the penetration of superconductivity over a considerable distance of 15 nm across the SrRuO3 layer without help of interfacial complex magnetism. This demonstrates the first FM/TSC device exhibiting the spin-triplet proximity effect.

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preprint2014arXiv

Phonon-assisted optical excitation in the narrow bandgap Mott insulator Sr3Ir2O7

We examined the temperature (T) evolution of the optical conductivity spectra of Sr$_3$Ir$_2$O$_7$ over a wide range of 10-400 K. The system was barely insulating, exhibiting a small indirect bandgap of $\sim$0.1 eV. The low-energy features of the optical d-d excitation (${\hbar}ω$ $<$ 0.3 eV) evolved drastically, whereas such evolution was not observed for the O K-edge X-ray absorption spectra. This suggests that the T evolution in optical spectra is not caused by a change in the bare (undressed) electronic structure, but instead, presumably originates from an abundance of phonon-assisted indirect excitations. Our results showed that the low-energy excitations were dominated by phonon-absorption processes which involve, in particular, the optical phonons. This implies that phonon-assisted processes significantly facilitate the charge dynamics in barely insulating Sr$_3$Ir$_2$O$_7$.

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preprint2013arXiv

Spin-orbital locked magnetic excitations in a half-metallic double perovskite Ba2FeReO6

We present a powder inelastic neutron scattering study of magnetic excitations in Ba$_2$FeReO$_6$, a member of the double perovskite family of materials which exhibit half-metallic behavior and high Curie temperatures. We find clear evidence of two well-defined dispersing magnetic modes in its low temperature ferrimagnetic state. We develop a local moment model, which incorporates the interaction of Fe spins with spin-orbit locked magnetic moments on Re, and show that this captures our experimental observations. Our study further opens up double perovskites as model systems to explore the interplay of strong correlations and spin-orbit coupling in 5d transition metal oxides.

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preprint2013arXiv

Temperature Evolution of Itinerant Ferromagnetism in SrRuO3 Probed by Optical Spectroscopy

The temperature ($T$) dependence of the optical conductivity spectra $σ(ω)$ of a single crystal SrRuO$_3$ thin film is studied over a $T$ range from 5 to 450 K. We observed significant $T$ dependence of the spectral weights of the charge transfer and interband $d$-$d$ transitions across the ferromagnetic Curie temperature ($T_c$ ~ 150 K). Such $T$ dependence was attributed to the increase in the Ru spin moment, which is consistent with the results of density functional theory calculations. $T$ scans of $σ(Ω, T)$ at fixed frequencies $Ω$ reveal a clear $T^2$ dependence below $T_c$, demonstrating that the Stoner mechanism is involved in the evolution of the electronic structure. In addition, $σ(Ω, T)$ continues to evolve at temperatures above $T_c$, indicating that the local spin moment persists in the paramagnetic state. This suggests that SrRuO$_3$ is an intriguing oxide system with itinerant ferromagnetism.

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preprint2012arXiv

Spin-Orbit Coupling in Iridium-Based 5d Compounds Probed by X-ray Absorption Spectroscopy

We have performed x-ray absorption spectroscopy (XAS) measurements on a series of Ir-based 5d transition metal compounds, including Ir, IrCl3, IrO2, Na2IrO3, Sr2IrO4, and Y2Ir2O7. By comparing the intensity of the "white-line" features observed at the Ir L2 and L3 absorption edges, it is possible to extract valuable information about the strength of the spin-orbit coupling in these systems. We observe remarkably large, non-statistical branching ratios in all Ir compounds studied, with little or no dependence on chemical composition, crystal structure, or electronic state. This result confirms the presence of strong spin-orbit coupling effects in novel iridates such as Sr2IrO4, Na2IrO3, and Y2Ir2O7, and suggests that even simple Ir-based compounds such as IrO2 and IrCl3 may warrant further study. In contrast, XAS measurements on Re-based 5d compounds, such as Re, ReO2, ReO3, and Ba2FeReO6, reveal statistical branching ratios and negligible spin-orbit coupling effects.

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preprint2011arXiv

Giant Flexoelectric Effect in Ferroelectric Epitaxial Thin Films

We report on nanoscale strain gradients in ferroelectric HoMnO3 epitaxial thin films, resulting in a giant flexoelectric effect. Using grazing-incidence in-plane X-ray diffraction, we measured strain gradients in the films, which were 6 or 7 orders of magnitude larger than typical values reported for bulk oxides. The combination of transmission electron microscopy, electrical measurements, and electrostatic calculations showed that flexoelectricity provides a means of tuning the physical properties of ferroelectric epitaxial thin films, such as domain configurations and hysteresis curves.

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preprint2011arXiv

Polarity control of carrier injection at ferroelectric/metal interfaces for electrically switchable diode and photovoltaic effects

We investigated a switchable ferroelectric diode effect and its physical mechanism in Pt/BiFeO3/SrRuO3 thin-film capacitors. Our results of electrical measurements support that, near the Pt/BiFeO3 interface of as-grown samples, a defective layer (possibly, an oxygen-vacancy-rich layer) becomes formed and disturbs carrier injection. We therefore used an electrical training process to obtain ferroelectric control of the diode polarity where, by changing the polarization direction using an external bias, we could switch the transport characteristics between forward and reverse diodes. Our system is characterized with a rectangular polarization hysteresis loop, with which we confirmed that the diode polarity switching occurred at the ferroelectric coercive voltage. Moreover, we observed a simultaneous switching of the diode polarity and the associated photovoltaic response dependent on the ferroelectric domain configurations. Our detailed study suggests that the polarization charge can affect the Schottky barrier at the ferroelectric/metal interfaces, resulting in a modulation of the interfacial carrier injection. The amount of polarization-modulated carrier injection can affect the transition voltage value at which a space-charge-limited bulk current-voltage (J-V) behavior is changed from Ohmic (i.e., J ~ V) to nonlinear (i.e., J ~ V^n with n \geq 2). This combination of bulk conduction and polarization-modulated carrier injection explains the detailed physical mechanism underlying the switchable diode effect in ferroelectric capacitors.

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preprint2011arXiv

Reduction of charge fluctuation energies in ultrathin NiO films on Ag(001)

We investigate on-site Coulomb interaction energy between two 3p holes U(Ni 3p) of ultrathin NiO films on Ag(001) by both x-ray photoelectron spectroscopy and Auger electron spectroscopy. As the film becomes thin, U(Ni 3p) monotonically decreases, and the difference of U(Ni 3p) for 1 monolayer (ML) film from that of bulk-like thick film δU(Ni 3p) reaches ~ -2.2 eV. The observed δU(Ni 3p) for 1 ML film is well reproduced by the differences of both the image potential and polarization energies between 1 ML film and the bulk-like thick film. Hence, the present results provide an evidence for the picture originally proposed by Duffy et al. [J. Phys. C: Solid State Phys., 16, 4087 (1983)] and Altieri et al. [Phys. Rev. B 59, R2517 (1999)]

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preprint2011arXiv

Step bunching-induced vertical lattice mismatch and crystallographic tilt in vicinal BiFeO3(001) films

Epitaxial (001) BiFeO3 thin films grown on vicinal SrTiO3 substrates are under large anisotropic stress from the substrates. The variations of the crystallographic tilt angle and the c lattice constant, caused by the lattice mismatch, along the film thickness were analyzed quantitatively using the X-ray diffraction technique. By generalizing the Nagai model, we estimated how step bunching resulted in the vertical lattice mismatch between adjacent BiFeO3 layers, which induced the strain relaxation and crystallographic tilt. The step bunching was confirmed by the increased terrace width on the BiFeO3 surface.

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preprint2010arXiv

Electronic structure and anomalous band-edge absorption feature in multiferroic MnWO4: An optical spectroscopic study

We investigated the electronic structure and lattice dynamics of multiferroic MnWO4 by optical spectroscopy. With variation of polarization, temperature, and magnetic field, we obtained optical responses over a wide range of photon energies. The electronic structure of MnWO4 near to the Fermi level was examined, with inter-band transitions identified in optical conductivity spectra above a band-gap of 2.5 eV. As for the lattice dynamics, we identified all the infrared transverse optical phonon modes available according to the group-theory analysis. Although we did not observe much change in global electronic structure across the phase transition temperatures, an optical absorption at around 2.2 eV showed an evident change depending upon the spin configuration and magnetic field. The behavior of this band-edge absorption indicates that spin-orbit coupling plays an important role in multiferroic MnWO4.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Epitaxial growth of multiferroic Pb(Zr0.57Ti0.43)O3-Pb(Fe2/3W1/3)O3 solid-solution thin films and their magnetoelectric effects

We report on epitaxial growth of single-phase [Pb(Zr0.57Ti0.43)O3]0.8[Pb(Fe2/3W1/3)O3]0.2 (PZT-PFW) solid-solution thin films using pulsed laser deposition. X-ray diffraction measurements reveal that the films have a tetragonal structure. The films exhibit ferroelectric properties and weak ferromagnetic responses at room temperature. Magnetoelectric effects were investigated; the nonlinear magnetoelectric coefficient was measured and found to be comparable to those of multiferroic hexagonal manganites, but at least two orders of magnitude smaller than that for polycrystalline PZT-PFW films.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Initial stages of nickel oxide growth on Ag(001) by pulsed laser deposition

Submonolayers of nickel oxide films were grown on an Ag(001) by pulsed laser deposition, and characterized in-situ by both scanning tunneling microscopy and X-ray photoelectron spectroscopy. We observed quasi-two-dimensional growth of the film, and clearly identified several kinds of defects, such as embedded metallic Ni clusters and, notably, oxygen atoms, even while looking deeply into the substrate. These originated from Ni and O hyperthermal projectiles as well as from NiO clusters that were formed during laser ablation of a NiO target. Those defects played a role of nucleation sites in extending the nucleation stage of thin film growth.

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preprint2010arXiv

Reduction of high reset currents in unipolar resistance switching Pt/SrTiOx/Pt capacitors using acceptor doping

The high reset current, IR, in unipolar resistance switching is an important issue which should be resolved for practical applications in nonvolatile memories. We showed that,during the forming and set processes, the compliance current, Icomp, can work as a crucial parameter to reduce IR. Doping with Co or Mn can significantly reduce the leakage current in capacitors made using SrTiOx film, opening a larger operation window for Icomp. By decreasing Icomp with acceptor doping, we could reduce IR in SrTiOx films by a factor of approximately 20. Our work suggests that the decrease of Icomp by carrier doping could be a viable alternative for reducing IR in unipolar resistance switching.

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preprint2010arXiv

Unveiling the ac Dynamics of Ferroelectric Domains by Investigating the Frequency Dependence of Hysteresis Loops

We investigated nonequilibrium domain wall dynamics under an ac field by measuring the hysteresis loops of epitaxial ferroelectric capacitors at various frequencies and temperatures. Polarization switching is induced mostly by thermally activated creep motion at lower frequencies, and by viscous flow motion at higher frequencies. The dynamic crossover between the creep and flow regimes unveils two frequency-dependent scaling regions of hysteresis loops. Based on these findings, we constructed a dynamic phase diagram for hysteretic ferroelectric domain dynamics in the presence of ac fields.

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preprint2009arXiv

Electric-field-controlled directional growth of ferroelectric domains in multiferroic BiFeO3 films

We describe the directional growth of ferroelectric domains in a multiferroic BiFeO3 thin film, which was grown epitaxially on a vicinal (001) SrTiO3 substrate. A detailed structural analysis of the film shows that a strain gradient, which can create a symmetry breaking in a ferroelectric double well potential, causes ferroelectric domains to grow with preferred directionality under the influence of an electric field. Our results suggest the possibility of controlling the direction of domain growth with an electric field by imposing constraints on ferroelectric films, such as a strain gradient.

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preprint2009arXiv

Fundamental thickness limit of itinerant ferromagnetic SrRuO$_3$ thin films

We report on a fundamental thickness limit of the itinerant ferromagnetic oxide SrRuO$_3$ that might arise from the orbital-selective quantum confinement effects. Experimentally, SrRuO$_3$ films remain metallic even for a thickness of 2 unit cells (uc), but the Curie temperature, T$_C$, starts to decrease at 4 uc and becomes zero at 2 uc. Using the Stoner model, we attributed the T$_C$ decrease to a decrease in the density of states (N$_o$). Namely, in the thin film geometry, the hybridized Ru-d$_yz,zx$ orbitals are terminated by top and bottom interfaces, resulting in quantum confinement and reduction of N$_o$.

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preprint2009arXiv

Large 1/f noise of unipolar resistance switching and its percolating nature

We investigated the 1/f noise of Pt/NiO/Pt capacitors that show unipolar resistance switching. When they were switched from the low to high resistance states, the power spectral density of the voltage fluctuation was increased by approximately five orders of magnitude. At 100 K, the relative resistance fluctuation, SR/R2, in the low resistance state displayed a power law dependence on the resistance R with exponent w = 1.6. This behavior can be explained by percolation theory; however, at higher temperatures or near the switching voltage, SR/R2 becomes enhanced further. This large 1/f noise can be therefore an important problem in the development of resistance random access memory devices.

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preprint2009arXiv

Multiple conducting carriers generated in LaAlO3/SrTiO3 heterostructures

We have found that there is more than one type of conducting carriers generated in LaAlO3/SrTiO3 heterostructures by comparing the sheet carrier density and mobility from optical transmission spectroscopy with those from dc-transport measurements. When multiple types of carriers exist, optical characterization dominantly reflects the contribution from the high-density carriers whereas dc-transport measurements may exaggerate the contribution of the high-mobility carriers even though they are present at low-density. Since the low-temperature mobilities determined by dc-transport in the LaAlO3/SrTiO3 heterostructures are much higher than those extracted by optical method, we attribute the origin of high-mobility transport to the low-density conducting carriers.

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preprint2009arXiv

Predictability of reset switching voltages in unipolar resistance switching

In unipolar resistance switching of NiO capacitors, Joule heating in the conducting channels should cause a strong nonlinearity in the low resistance state current-voltage (I-V) curves. Due to the percolating nature of the conducting channels, the reset current IR, can be scaled to the nonlinear coefficient Bo of the I-V curves. This scaling relationship can be used to predict reset voltages, independent of NiO capacitor size; it can also be applied to TiO2 and FeOy capacitors. Using this relation, we developed an error correction scheme to provide a clear window for separating reset and set voltages in memory operations.

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preprint2009arXiv

The electronic structure of epitaxially stabilized 5d perovskite Ca_{1-x}Sr_xIrO_3 (x = 0, 0.5, and 1) thin films: the role of strong spin-orbit coupling

We have investigated the electronic structure of meta-stable perovskite Ca1-xSrxIrO3 (x = 0, 0.5, and 1) thin films using transport measurements, optical spectroscopy, and first-principles calculations. We artificially fabricated the perovskite phase of Ca1-xSrxIrO3, which has a hexagonal or post perovskite crystal structure in bulk form, by growing epitaxial thin films on perovskite GdScO3 substrates using epi-stabilization technique. The transport properties of the perovskite Ca1-xSrxIrO3 films systematically changed from nearly insulating (or semi-metallic) for x = 0 to bad metallic for x = 1. Due to the extended wavefunctions, 5d electrons are usually delocalized. However, the strong spin-orbit coupling in Ca1-xSrxIrO3 results in the formation of effective total angular momentum Jeff = 1/2 and 3/2 states, which puts Ca1-xSrxIrO3 in the vicinity of a metal-insulator phase boundary. As a result, the electrical properties of the Ca1-xSrxIrO3 films are found to be sensitive to x and strain.

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preprint2009arXiv

Two-Dimensional Confinement of 3d1 Electrons in LaTiO3/LaAlO3 Multilayers

We report spectroscopic ellipsometry measurements of the anisotropy of the interband transitions parallel and perpendicular to the planes of (LaTiO3)n(LaAlO3)5 multilayers with n = 1-3. These provide direct information about the electronic structure of the two-dimensional (2D) 3d^1 state of the Ti ions. In combination with LDA+U calculations, we suggest that 2D confinement in the TiO2 slabs lifts the degeneracy of the t_{2g} states leaving only the planar d_xy orbitals occupied. We outline that these multilayers can serve as a model system for the study of the t_{2g} 2D Hubbard model.

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preprint2008arXiv

Localized electronic states induced by defects and possible origin of ferroelectricity in strontium titanate thin films

Several defect configurations including oxygen vacancies have been investigated as possible origins of the reported room-temperature ferroelectricity of strontium titanate (STO) thin films [Appl. Phys. Letts. 91, 042908 (2007)]. First-principles calculations revealed that the Sr-O-O vacancy complexes create deep localized states in the band gap of SrTiO3 without affecting its insulating property. These results are in agreement with electronic structural changes determined from optical transmission and X-ray absorption measurements. This work opens the way to exploiting oxygen vacancies and their complexes as a source of ferroelectricity in perovskite oxide thin films, including STO.

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preprint2007arXiv

Electronic structures of hexagonal RMnO3 (R = Gd, Tb, Dy, and Ho) thin films

We investigated the electronic structure of multiferroic hexagonal RMnO3 (R = Gd, Tb, Dy, and Ho) thin films using both optical spectroscopy and first-principles calculations. Using artificially stabilized hexagonal RMnO3, we extended the optical spectroscopic studies on the hexagonal multiferroic manganite system. We observed two optical transitions located near 1.7 eV and 2.3 eV, in addition to the predominant absorption above 5 eV. With the help of first-principles calculations, we attribute the low-lying optical absorption peaks to inter-site transitions from the oxygen states hybridized strongly with different Mn orbital symmetries to the Mn 3d3z2-r2 state. As the ionic radius of the rare earth ion increased, the lowest peak showed a systematic increase in its peak position. We explained this systematic change in terms of a flattening of the MnO5 triangular bipyramid.

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preprint2006arXiv

Dielectric constants of Ir, Ru, Pt, and IrO2: Contributions from bound charges

We investigated the dielectric functions $ε$($ω$) of Ir, Ru, Pt, and IrO$_2$, which are commonly used as electrodes in ferroelectric thin film applications. In particular, we investigated the contributions from bound charges $ε^{b}$($ω$), since these are important scientifically as well as technologically: the $ε_1^{b}$(0) of a metal electrode is one of the major factors determining the depolarization field inside a ferroelectric capacitor. To obtain $ε_1^{b}$(0), we measured reflectivity spectra of sputtered Pt, Ir, Ru, and IrO2 films in a wide photon energy range between 3.7 meV and 20 eV. We used a Kramers-Kronig transformation to obtain real and imaginary dielectric functions, and then used Drude-Lorentz oscillator fittings to extract $ε_1^{b}$(0) values. Ir, Ru, Pt, and IrO$_2$ produced experimental $ε_1^{b}$(0) values of 48$\pm$10, 82$\pm$10, 58$\pm$10, and 29$\pm$5, respectively, which are in good agreement with values obtained using first-principles calculations. These values are much higher than those for noble metals such as Cu, Ag, and Au because transition metals and IrO$_2$ have such strong d-d transitions below 2.0 eV. High $ε_1^{b}$(0) values will reduce the depolarization field in ferroelectric capacitors, making these materials good candidates for use as electrodes in ferroelectric applications.

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preprint2006arXiv

Initial growth behavior and resulting microstructural properties of heteroepitaxial ZnO thin films on sapphire (0001) substrates

We have investigated the initial growth behavior and resulting microstructural properties of heteroepitaxial ZnO thin films prepared by pulsed laser deposition on sapphire (0001) substrates. High-resolution x-ray diffraction and transmission electron microscopy studies revealed that the initial growth behavior and the microstructure of the films significantly depend on the growth parameters. ZnO films grown at 700 oC with 20 mTorr O2 partial pressure initiated with a columnar growth mode and contained two kinds of domains. These domains were in-plane orientated either ZnO[112-0]//Al2O3[101-0] or ZnO[101-0]//Al2O3[101-0], and were surrounded by highly defective domain boundaries with threading dislocations. The films grown at 800 oC with 1 mTorr O2 showed 2-dimensional layered growth with only one in-plane epitaxial relationship, ZnO[112-0]//Al2O3[101-0]. Most of the defects in the layered grown films were basal plane stacking faults near the interface between ZnO and the substrate. The formation mechanism of the 30o-twisted domains with the in-plane orientation of ZnO[101-0]//Al2O3[101-0] is discussed.

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preprint2006arXiv

Magnetoelectric effects of nanoparticulate Pb(Zr0.52Ti0.48)O3-NiFe2O4 composite films

We fabricated Pb(Zr0.52Ti0.48)O3-NiFe2O4 composite films consisting of randomly dispersed NiFe2O4 nanoparticles in the Pb(Zr0.52Ti0.48)O3 matrix. The structural analysis revealed that the crystal axes of the NiFe2O4 nanoparticles are aligned with those of the ferroelectric matrix. The composite has good ferroelectric and magnetic properties. We measured the transverse and longitudinal components of the magnetoelectric voltage coefficient, which supports the postulate that the magnetoelectric effect comes from direct stress coupling between magnetostrictive NiFe2O4 and piezoelectric Pb(Zr0.52Ti0.48)O3 grains.

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preprint2006arXiv

Multiferroic properties of epitaxially stabilized hexagonal DyMnO3 thin films

We fabricated epitaxial thin films of hexagonal DyMnO3, which otherwise form in a bulk perovskite structure, via deposition on Pt(111)//Al2O3 (0001) and YSZ(111) substrates: each of which has in-plane hexagonal symmetry. The polarization hysteresis loop demonstrated the existence of ferroelectricity in our hexagonal DyMnO3 films at least below 70 K. The observed 2.2 uC/cm^2 remnant polarization at 25 K corresponded to a polarization enhancement by a factor of 10 compared to that of the bulk orthorhombic DyMnO3. Interestingly, this system showed an antiferroelectric-like feature in its hysteresis loop. Our hexagonal DyMnO3 films showed an antiferromagnetic Neel temperature around 60 K and a spin reorientation transition around 40 K. We also found a clear hysteresis in the temperature dependence of the magnetization, which was measured after zero-field-cooling and field-cooling. This hysteresis may well have been of spin glass origin, which was likely to arise from the geometric frustration of antiferromagnetically-coupled Mn spins with an edge-sharing triangular lattice.

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preprint2005arXiv

Orbital-selective Mass Enhancements in Multi-band Ca$_{2-x}$Sr$_{x}$RuO$_{4}$ Systems Analyzed by the Extended Drude Model

We investigated optical spectra of quasi-two-dimensional multi-band Ca$% _{2-x} $Sr$_{x}$RuO$_{4}$ systems. The extended Drude model analysis on the ab-plane optical conductivity spectra indicates that the effective mass should be enhanced near $x=0.5$. Based on the sum rule argument, we showed that the orbital-selective Mott-gap opening for the $d_{yz/zx}$ bands, the widely investigated picture, could not be the origin of the mass enhancement. We exploited the multi-band effects in the extended Drude model analysis, and demonstrated that the intriguing heavy mass state near $x=0.5$ should come from the renormalization of the $d_{xy}$ band.

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