Researcher profile

S. -W. Tsai

S. -W. Tsai contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2020arXiv

Quantum Joule Expansion of One-Dimensional Systems

We investigate the Joule expansion of nonintegrable quantum systems that contain bosons or spinless fermions in one-dimensional lattices. A barrier initially confines the particles to be in half of the system in a thermal state described by the canonical ensemble and is removed at time $t = 0$. We investigate the properties of the time-evolved density matrix, the diagonal ensemble density matrix and the corresponding canonical ensemble density matrix with an effective temperature determined by the total energy conservation using exact diagonalization. The weights for the diagonal ensemble and the canonical ensemble match well for high initial temperatures that correspond to negative effective final temperatures after the expansion. At long times after the barrier is removed, the time-evolved Rényi entropy of subsystems bigger than half can equilibrate to the thermal entropy with exponentially small fluctuations. The time-evolved reduced density matrix at long times can be approximated by a thermal density matrix for small subsystems. Few-body observables, like the momentum distribution function, can be approximated by a thermal expectation of the canonical ensemble with strongly suppressed fluctuations. The negative effective temperatures for finite systems go to nonnegative temperatures in the thermodynamic limit for bosons, but is a true thermodynamic effect for fermions, which is confirmed by finite temperature density matrix renormalization group calculations. We propose the Joule expansion as a way to dynamically create negative temperature states for fermion systems with repulsive interactions.

preprint2009arXiv

Electronic Doping and Scattering by Transition Metals on Graphene

We investigate the effects of transition metals (TM) on the electronic doping and scattering in graphene using molecular beam epitaxy combined with in situ transport measurements. The room temperature deposition of TM onto graphene produces clusters that dope n-type for all TM investigated (Ti, Fe, Pt). We also find that the scattering by TM clusters exhibits different behavior compared to 1/r Coulomb scattering. At high coverage, Pt films are able to produce doping that is either n-type or weakly p-type, which provides experimental evidence for a strong interfacial dipole favoring n-type doping as predicted theoretically.