Researcher profile

S. Vézian

S. Vézian contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2016arXiv

Superconductivity in the ferromagnetic semiconductor SmN

The discovery of materials that simultaneously host different phases of matter has often initially confounded, but ultimately enhanced, our basic understanding of the coexisting types of order. The associated intellectual challenges, together with the promise of greater versatility for potential applications, have made such systems a focus of modern materials science. In particular, great efforts have recently been devoted to making semiconductors ferromagnetic and metallic ferromagnets superconducting. Here we report the unprecedented observation of a heavily donor-doped ferromagnetic semiconductor, SmN, becoming superconducting with ferromagnetism remaining intact. The extremely large exchange splitting of the conduction and valence bands in this material necessitates that the superconducting order hosted by SmN is of an unconventional triplet type, most likely exhibiting p-wave symmetry. Short range spin fluctuations, which are thought to be the cause of pairing interactions in currently known triplet superconductors, are quenched in SmN, suggesting its superconductivity to be the result of phonon- or Coulomb-mediated pairing mechanisms. This scenario is further supported by the inferred heavy mass of superconducting charge carriers. The unique near-zero magnetisation associated with the ferromagnetic state in SmN further aids its coexistence with superconductivity. Presenting this novel material system where semiconducting, ferromagnetic and superconducting properties are combined provides a versatile new laboratory for studying quantum phases of matter. Moreover it is a major step towards identifying materials that merge superconductivity and spintronics, urgently needed to enable the design of electronic devices with superior functionality.

preprint2014arXiv

Highly resistive epitaxial Mg-doped GdN thin films

We report the growth by molecular beam epitaxy of highly resistive GdN, using intentional doping with magnesium. Mg-doped GdN layers with resistivities of 1000 Ω.cm and carrier concentrations of 10E16 cm-3 are obtained for films with Mg concentrations up to 5 x 10E19 atoms/cm3. X-ray diffraction rocking curves indicate that Mg-doped GdN films have crystalline quality very similar to undoped GdN films, showing that the Mg doping did not affect the structural properties of the films. A decrease of the Curie temperature with decreasing the electron density is observed, supporting a recently suggested magnetic polaron scenario [F. Natali et al., Phys. Rev. B 87, 035202 (2013)].