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Researcher profile

F. Natali

F. Natali contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.softcond-mat.dis-nncond-mat.str-elcond-mat.supr-con

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Published work

10 published item(s)

preprint2020arXiv

Atomic scale investigation of the volume phase transition in concentrated PNIPAM microgels

Combining elastic incoherent neutron scattering and differential scanning calorimetry, we investigate the occurrence of the volume phase transition (VPT) in very concentrated PNIPAM microgel suspensions, from a polymer weight fraction of 30~wt\% up to dry conditions. Although samples are arrested at the macroscopic scale, atomic degrees of freedom are equilibrated and can be probed in a reproducible way. A clear signature of the VPT is present as a sharp drop of the mean square displacement of PNIPAM hydrogen atoms obtained by neutron scattering. As a function of concentration, the VPT gets smoother as dry conditions are approached whereas the VPT temperature shows a minimum at about 43~wt\%. This behavior is qualitatively confirmed by calorimetry measurements. Molecular dynamics simulations are employed to complement experimental results and gain further insights into the nature of the VPT, confirming that it involves the formation of an attractive gel state between the microgels. Overall, these results provide evidence that the VPT in PNIPAM-based systems can be detected at different time- and length-scales as well as in overcrowded conditions.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Superconductivity in the ferromagnetic semiconductor SmN

The discovery of materials that simultaneously host different phases of matter has often initially confounded, but ultimately enhanced, our basic understanding of the coexisting types of order. The associated intellectual challenges, together with the promise of greater versatility for potential applications, have made such systems a focus of modern materials science. In particular, great efforts have recently been devoted to making semiconductors ferromagnetic and metallic ferromagnets superconducting. Here we report the unprecedented observation of a heavily donor-doped ferromagnetic semiconductor, SmN, becoming superconducting with ferromagnetism remaining intact. The extremely large exchange splitting of the conduction and valence bands in this material necessitates that the superconducting order hosted by SmN is of an unconventional triplet type, most likely exhibiting p-wave symmetry. Short range spin fluctuations, which are thought to be the cause of pairing interactions in currently known triplet superconductors, are quenched in SmN, suggesting its superconductivity to be the result of phonon- or Coulomb-mediated pairing mechanisms. This scenario is further supported by the inferred heavy mass of superconducting charge carriers. The unique near-zero magnetisation associated with the ferromagnetic state in SmN further aids its coexistence with superconductivity. Presenting this novel material system where semiconducting, ferromagnetic and superconducting properties are combined provides a versatile new laboratory for studying quantum phases of matter. Moreover it is a major step towards identifying materials that merge superconductivity and spintronics, urgently needed to enable the design of electronic devices with superior functionality.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Twisted phase of the orbital-dominant ferromagnet SmN in a GdN/SmN heterostructure

The strong spin-orbit interaction in the rare-earth elements ensures that even within a ferromagnetic state there is a substantial orbital contribution to the ferromagnetic moment, in contrast to more familiar transition metal systems, where the orbital moment is usually quenched. The orbital-dominant magnetization that is then possible within rare-earth systems facilitates the fabrication of entirely new magnetic heterostructures, and here we report a study of a particularly striking example comprising interfaces between GdN and SmN. Our investigation reveals a twisted magnetization arising from the large spin-only magnetic moment in GdN and the nearly zero, but orbital-dominant, moment of SmN. The unusual twisted phase is driven by (i) the similar ferromag- netic Gd-Gd, Sm-Sm and Gd-Sm exchange interactions, (ii) a SmN Zeeman interaction 200 times weaker than that of GdN, and (iii) the orbital-dominant SmN magnetic moment. The element specificity of X-ray magnetic circular dichroism (XMCD) is used in seperate modes probing both bulk and surface regions, revealing the depth profile of the twisting magnetization.

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preprint2014arXiv

Highly resistive epitaxial Mg-doped GdN thin films

We report the growth by molecular beam epitaxy of highly resistive GdN, using intentional doping with magnesium. Mg-doped GdN layers with resistivities of 1000 Ω.cm and carrier concentrations of 10E16 cm-3 are obtained for films with Mg concentrations up to 5 x 10E19 atoms/cm3. X-ray diffraction rocking curves indicate that Mg-doped GdN films have crystalline quality very similar to undoped GdN films, showing that the Mg doping did not affect the structural properties of the films. A decrease of the Curie temperature with decreasing the electron density is observed, supporting a recently suggested magnetic polaron scenario [F. Natali et al., Phys. Rev. B 87, 035202 (2013)].

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Electric field and photo-excited control of the carrier concentration in GdN

We present both electric-field and photo-excited control of the carrier concentration in GdN. There is no evidence in the results of a carrier-mediated contribution to the Gd-Gd exchange interaction that has been suggested to explain a measured Curie temperature that is much higher than obtained within theoretical treatments. Persistent carrier concentrations seen in both the field-effect and photo-induced conductivities point to a distribution of long-lived trap states below the conduction band, very likely centred at nitrogen vacancies

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preprint2013arXiv

Europium nitride: A novel diluted magnetic semiconductor

Europium nitride is semiconducting and contains non-magnetic \3+, but sub-stoichiometric EuN has Eu in a mix of 2+ and 3+ charge states. We show that at \2+ ~concentrations near 15-20% EuN is ferromagnetic with a Curie temperature as high as 120 K. The \3+ ~polarization follows that of the \2+, confirming that the ferromagnetism is intrinsic to the EuN which is thus a novel diluted magnetic semiconductor. Transport measurements shed light on the likely exchange mechanisms.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Spin/orbit moment imbalance in the near-zero moment ferromagnetic semiconductor SmN

SmN is ferromagnetic below 27 K, and its net magnetic moment of 0.03 Bohr magnetons per formula unit is one of the smallest magnetisations found in any ferromagnetic material. The near-zero moment is a result of the nearly equal and opposing spin and orbital moments in the 6H5/2 ground state of the Sm3+ ion, which leads finally to a nearly complete cancellation for an ion in the SmN ferromagnetic state. Here we explore the spin alignment in this compound with X-ray magnetic circular dichroism at the Sm L2,3 edges. The spectral shapes are in qualitative agreement with computed spectra based on an LSDA+U (local spin density approximation with Hubbard-U corrections) band structure, though there remain differences in detail which we associate with the anomalous branching ratio in rare-earth L edges. The sign of the spectra determine that in a magnetic field the Sm 4f spin moment aligns antiparallel to the field; the very small residual moment in ferromagnetic SmN aligns with the 4f orbital moment and antiparallel to the spin moment. Further measurements on very thin (1.5 nm) SmN layers embedded in GdN show the opposite alignment due to a strong Gd-Sm exchange, suggesting that the SmN moment might be further reduced by about 0.5 % Gd substitution.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Epitaxial integration of the intrinsic ferromagnetic semiconductor GdN with silicon technology

A major challenge for the next generation of spintronics devices is the implementation of ferromagnetic-semiconductor thin films as spin injectors and detectors. Spin-polarised carrier injection cannot be accomplished efficiently from metals, and coupled with the rarity of intrinsic ferromagnetic semiconductors this has driven intensive study of diluted magnetic semiconductors. Chief among these is the doped III-V compound (Ga,Mn)As. These materials suffer from a number of drawbacks; they (i) require magnetic-ion doping well above the solubility limit, and (ii) must be hole doped to above the degenerate limit, preventing independent control of the carrier concentration and charge sign. Here we demonstrate the first epitaxial growth of a recently-characterised intrinsic ferromagnetic semiconductor, GdN, on silicon substrates, providing an essential step on the way to integrate new spintronics functionalities into Si-based technology. The films have been characterised as regards their growth toward fully relaxed GdN, the density and mobility of their carriers, and their magnetic behaviour.

0 citations0 reviewsNo code linkedOpen access
preprint2008arXiv

Ergodicity breaking in strong and network-forming glassy system

The temperature dependence of the non-ergodicity factor of vitreous GeO$_2$, $f_{q}(T)$, as deduced from elastic and quasi-elastic neutron scattering experiments, is analyzed. The data are collected in a wide range of temperatures from the glassy phase, up to the glass transition temperature, and well above into the undercooled liquid state. Notwithstanding the investigated system is classified as prototype of strong glass, it is found that the temperature- and the $q$-behavior of $f_{q}(T)$ follow some of the predictions of Mode Coupling Theory. The experimental data support the hypothesis of the existence of an ergodic to non-ergodic transition occurring also in network forming glassy systems.

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