Researcher profile

S. V. Poltavtsev

S. V. Poltavtsev contributes to research discovery and scholarly infrastructure.

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Published work

6 published item(s)

preprint2022arXiv

Extending the time of coherent optical response in ensemble of singly-charged InGaAs quantum dots

The ability to extend the time scale of the coherent optical response from large ensembles of quantum emitters is highly appealing for applications in quantum information devices. In semiconductor nanostructures, spin degrees of freedom can be used as auxiliary, powerful tools to modify the coherent optical dynamics. Here, we apply this approach to negatively charged (In,Ga)As/GaAs self-assembled quantum dots which are considered as excellent quantum emitters with robust optical coherence and high bandwidth. We study 3-pulse spin-dependent photon echoes subject to moderate transverse magnetic fields up to 1 T. We demonstrate that the timescale of coherent optical response can be extended by at least an order of magnitude by the field. Without magnetic field, the photon echo decays with $T_ 2$ = 0.45 ns which is determined by the radiative lifetime of trions $T_1$ = 0.27 ns. In the presence of the transverse magnetic field, the decay of the photon echo signal is given by spin dephasing time of the ensemble of resident electrons $T_{2,e}$ ~ 4 ns. We demonstrate that the non-zero transverse g-factor of the heavy holes in the trion state plays a crucial role in the temporal evolution and magnetic field dependence of the long-lived photon echo signal.

preprint2020arXiv

Accurate photon echo timing by optical freezing of exciton dephasing and rephasing in quantum dots

Semiconductor quantum dots are excellent candidates for ultrafast coherent manipulation of qubits by laser pulses on picosecond timescales or even faster. In inhomogeneous ensembles a macroscopic optical polarization decays rapidly due to dephasing, which, however, is reversible in photon echoes carrying complete information about the coherent ensemble dynamics. Control of the echo emission time is mandatory for applications. Here, we propose a novel concept to reach this goal. In a two-pulse photon echo sequence, we apply an additional resonant control pulse with multiple of 2pi area. Depending on its arrival time, the control slows down dephasing or rephasing of the exciton ensemble during its action. We demonstrate for self-assembled (In,Ga)As quantum dots that the photon echo emission time can be retarded or advanced by 5 ps relative to its nominal appearance time without control. This versatile protocol may be used to obtain significantly longer temporal shifts for suitably tailored control pulses.

preprint2020arXiv

Quantum beats in the polarization of the spin-dependent photon echo from donor-bound excitons in CdTe/(Cd,Mg)Te quantum wells

We study the quantum beats in the polarization of the photon echo from donor-bound exciton ensembles in semiconductor quantum wells. To induce these quantum beats, a sequence composed of a circularly polarized and a linearly polarized picosecond laser pulse in combination with an external transverse magnetic field is used. This results in an oscillatory behavior of the photon echo amplitude, detected in the $σ^+$ and $σ^-$ circular polarizations, occurring with opposite phases relative to each other. The beating frequency is the sum of the Larmor frequencies of the resident electron and the heavy hole when the second pulse is polarized along the magnetic field. The beating frequency is, on the other hand, the difference of these Larmor frequencies when the second pulse is polarized orthogonal to the magnetic field. The measurement of both beating frequencies serves as a method to determine precisely the in-plane hole $g$ factor, including its sign. We apply this technique to observe the quantum beats in the polarization of the photon echo from the donor-bound excitons in a 20-nm-thick CdTe/Cd$_{0.76}$Mg$_{0.24}$Te quantum well. From these quantum beats we obtain the in-plane heavy hole $g$ factor $g_h=-0.143\pm0.005$.

preprint2020arXiv

The in-plane anisotropy of the hole $g$ factor in CdTe/(Cd,Mg)Te quantum wells studied by spin-dependent photon echoes

We use the two-pulse spin-dependent photon echo technique to study the in-plane hole spin anisotropy in a 20~nm-thick CdTe/Cd$_{0.76}$Mg$_{0.24}$Te single quantum well by exciting the donor-bound exciton resonance. We take advantage of the photon echo sensitivity to the relative phase of the electron and hole spin precession and study various interactions contributing to the hole in-plane spin properties. The main contribution is found to arise from the crystal cubic symmetry described by the Luttinger parameter $q=0.095$, which is substantially larger than the one theoretically expected for CdTe or found in other quantum well structures. Another contribution is induced by the strain within the quantum well. These two contributions manifest as different harmonics of the spin precession frequencies in the photon echo experiment, when strength and orientation of the Voigt magnetic field are varied. The magnitude of the effective in-plane hole $g$ factor is found to vary in the range $|\tilde{g_h}|$=0.125--0.160 in the well plane.

preprint2019arXiv

Step-like spectral distribution of photoelectrons at the percolation threshold in heavily $p$-doped GaAs

We study the origin of the step-like shoulder on the high energy side of the low temperature photoluminescence spectrum of heavily $p$-doped GaAs. We show experimentally that it is controlled by the Fermi-Dirac distribution of the holes and by the energy distribution of the photoexcited electrons showing a sharp step-like dependence. This step is attributed to the percolation threshold in the conduction band separating localized from delocalized electron states. A comprehensive set of optical techniques based on spin orientation of electrons, namely the Hanle effect, time- and polarization-resolved photoluminescence, as well as transient pump-probe Faraday rotation are used for these studies. We identify two different electron ensembles with substantially different spin lifetimes of 20 and 280~ps, limited by the lifetime of the electrons. Their spin relaxation times are longer than 2~ns. The relative contribution of short- and long-lived photoexcited electrons to the emission spectrum changes abruptly at the high-energy photoluminescence step-like tail. For energies above the percolation threshold the electron states are empty due to fast energy relaxation, while for lower energies the relaxation is suppressed and the majority of photoelectrons populate these states.

preprint2008arXiv

Effect of annealing on the hyperfine interaction in InAs/GaAs quantum dots

The hyperfine interaction of an electron with nuclei in the annealed self-assembled InAs/GaAs quantum dots is theoretically analyzed. For this purpose, the annealing process, and energy structure of the quantum dots are numerically modeled. The modeling is verified by comparison of the calculated optical transitions and of the experimental data on photoluminescence for set of the annealed quantum dots. The localization volume of the electron in the ground state and the partial contributions of In, Ga, and As nuclei to the hyperfine interaction are calculated as functions of the annealing temperature. It is established that the contribution of indium nuclei into the hyperfine interaction becomes predominant up to high annealing temperatures (T = 980 C) when the In content in the quantum dots does not exceed 25%. Effect of the nuclear spin fluctuations on the electron spin polarization is numerically modeled. Effective field of the fluctuations is found to be in good agreement with experimental data available.