Source author record

S. Shrestha

Explore this author’s publications, collaborators and research topics. This catalog record has not been claimed by its author.

ResearcherUnclaimed source record

cond-mat.mtrl-sci cond-mat.mes-hall cond-mat.str-el cond-mat.supr-con physics.ins-det

Catalog footprint

Research overview

3works

5topics

4close collaborators

Actions

Is this your work?

Open graph Browse papers

preprint2021arXiv

Emergent interlayer magnetic order via strain-induced orthorhombic distortion in the 5d Mott insulator Sr2IrO4

We report a La2CuO4-like interlayer antiferromagnetic order in Sr2IrO4 films with large orthorhombic distortion (> 1.5%). The biaxial lattice strain in epitaxial heterostructures of Sr2IrO4/Ca3Ru2O7 lowers the crystal symmetry of Sr2IrO4 from tetragonal (C4) to orthorhombic (C2), guiding the Ir 5d Jeff = 1/2 pseudospin moment parallel to the elongated b-axis via magnetic anisotropy. From resonant X-ray scattering experiments, we observed an antiferromagnetic order in the orthorhombic Sr2IrO4 film whose interlayer stacking pattern is inverted from that of the tetragonal Sr2IrO4 crystal. This interlayer stacking is similar to that of the orthorhombic La2CuO4, implying that the asymmetric interlayer exchange interaction along a and b-directions exceeds the anisotropic interlayer pseudo-dipolar interaction. Our result suggests that strain-induced distortion can provide a delicate knob for tuning the long-range magnetic order in quasi-two-dimensional systems by evoking the competition between the interlayer exchange coupling and the pseudo-dipolar interaction.

preprint2016arXiv

MuPix7 - A fast monolithic HV-CMOS pixel chip for Mu3e

The MuPix7 chip is a monolithic HV-CMOS pixel chip, thinned down to 50 μm. It provides continuous self-triggered, non-shuttered readout at rates up to 30 Mhits/chip of 3x3 mm^2 active area and a pixel size of 103x80 μm^2. The hit efficiency depends on the chosen working point. Settings with a power consumption of 300 mW/cm^2 allow for a hit efficiency >99.5%. A time resolution of 14.2 ns (Gaussian sigma) is achieved. Latest results from 2016 test beam campaigns are shown.

preprint2011arXiv

Electrical Properties of Conductive Ge Nanocrystal Thin Films Fabricated by Low Temperature In-situ Growth

Thin films composed of Ge nanocrystals embedded in amorphous SiO2 matrix (Ge-NCs TFs) were prepared using a low temperature in-situ growth method. Unexpected high p-type conductivity was observed in the intrinsic Ge-NCs TFs. Unintentional doping from shallow dopants was excluded as a candidate mechanism of hole generation. Instead, the p-type characteristic was attributed to surface state induced hole accumulation in NCs, and the hole conduction was found to be a thermally activated process involving charge hopping from one NC to its nearest neighbor. Theoretical analysis has shown that the density of surface states in Ge-NCs is sufficient to induce adequate holes for measured conductivity. The film conductivity can be improved significantly by post-growth rapid thermal annealing and this effect is explained by a simple thermodynamic model. The impact of impurities on the conduction properties was also studied. Neither compensation nor enhancement in conduction was observed in the Sb and Ga doped Ge-NCs TFs, respectively. This could be attributed to the fact that these impurities are no longer shallow dopants in NCs and are much less likely to be effectively activated. Finally, the photovoltaic effect of heterojunction diodes employing such Ge-NCs TFs was characterized in order to demonstrate its functionality in device implementation.

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.