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S. Schöche

S. Schöche appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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physics.opticscond-mat.mes-hallcond-mat.mtrl-sci

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Published work

4 published item(s)

preprint2015arXiv

Cavity-enhanced optical Hall effect in two-dimensional free charge carrier gases detected at terahertz frequencies

The effect of a tunable, externally coupled Fabry-Pérot cavity to resonantly enhance the optical Hall effect signatures at terahertz frequencies produced by a traditional Drude-like two-dimensional electron gas is shown and discussed in this communication. As a result, the detection of optical Hall effect signatures at conveniently obtainable magnetic fields, for example by neodymium permanent magnets, is demonstrated. An AlInN/GaN-based high electron mobility transistor structure grown on a sapphire substrate is used for the experiment. The optical Hall effect signatures and their dispersions, which are governed by the frequency and the reflectance minima and maxima of the externally coupled Fabry-Pérot cavity, are presented and discussed. Tuning the externally coupled Fabry-Pérot cavity strongly modifies the optical Hall effect signatures, which provides a new degree of freedom for optical Hall effect experiments in addition to frequency, angle of incidence and magnetic field direction and strength.

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preprint2015arXiv

Infrared dielectric function, phonon modes and free-charge carrier properties of high-Al-content Al$_x$Ga$_{1-x}$N alloys determined by mid-infrared spectroscopic ellipsometry and optical Hall effect

The phonon mode parameters and anisotropic mid-infrared dielectric function tensor components of high- Al-content Al$_x$Ga$_{1-x}$N alloys in dependence of the Al content $x$ are precisely determined from mid-infrared spectroscopic ellipsometry measurements for a set of high-quality Si-doped Al$_x$Ga$_{1-x}$N epitaxial layers on 4H-SiC substrates. Two-mode behavior of the $E_1$(TO) modes and one-mode behavior of the $A_1$(LO) mode are found in agreement with previous Raman scattering spectroscopy reports. The composition dependencies of the IR active phonon frequency parameters are established and a discussion on the silent $B_1$ mode that may be disorder activated is provided. The static dielectric constants in dependence of $x$ are determined by using the best-match model derived phonon mode frequency and high-frequency dielectric constant parameters and applying the Lydanne-Sachs-Teller relation. The effective mass parameter in high-Al-content Al$_x$Ga$_{1-x}$N alloys and its composition dependence are determined from mid-infrared optical Hall effect measurements. Furtheremore, the free electron concentration $N$ and mobility parameters $μ$ of Al$_x$Ga$_{1-x}$N films with similar Si doping levels are investigated as function of the Al content, $x$ and discussed.

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preprint2013arXiv

Electron effective mass in Al$_{0.72}$Ga$_{0.28}$N alloys determined by mid-infrared optical Hall effect

The effective electron mass parameter in Si-doped Al$_{0.72}$Ga$_{0.28}$N is determined to be $m^\ast=(0.336\pm0.020)\,m_0$ from mid-infrared optical Hall effect measurements. No significant anisotropy of the effective electron mass parameter is found supporting theoretical predictions. Assuming a linear change of the effective electron mass with the Al content in AlGaN alloys and $m^\ast=0.232\,m_0$ for GaN, an average effective electron mass of $m^\ast=0.376\,m_0$ can be extrapolated for AlN. The analysis of mid-infrared spectroscopic ellipsometry measurements further confirms the two phonon mode behavior of the E$_1$(TO) and one phonon mode behavior of the A$_1$(LO) phonon mode in high-Al-content AlGaN alloys as seen in previous Raman scattering studies.

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preprint2013arXiv

Free-charge carrier parameters of n-type, p-type and compensated InN:Mg determined by Infrared Spectroscopic Ellipsometry

Infrared spectroscopic ellipsometry is applied to investigate the free-charge carrier properties of Mg-doped InN films. Two representative sets of In-polar InN grown by molecular beam epitaxy with Mg concentrations ranging from $1.2\times10^{17}$ cm$^{-3}$ to $8\times10^{20}$ cm$^{-3}$ are compared. P-type conductivity is indicated for the Mg concentration range of $1\times10^{18}$ cm$^{-3}$ to $9\times10^{19}$ cm$^{-3}$ from a systematic investigation of the longitudinal optical phonon plasmon broadening and the mobility parameter in dependence of the Mg concentration. A parameterized model that accounts for the phonon-plasmon coupling is applied to determine the free-charge carrier concentration and mobility parameters in the doped bulk InN layer as well as the GaN template and undoped InN buffer layer for each sample. The free-charge carrier properties in the second sample set are consistent with the results determined in a comprehensive analysis of the first sample set reported earlier [Schöche et al., J. Appl. Phys. 113, 013502 (2013)]. In the second set, two samples with Mg concentration of $2.3\times10^{20}$ cm$^{-3}$ are identified as compensated n-type InN with very low electron concentrations which are suitable for further investigation of intrinsic material properties that are typically governed by high electron concentrations even in undoped InN. The compensated n-type InN samples can be clearly distinguished from the p-type conductive material of similar plasma frequencies by strongly reduced phonon plasmon broadening.

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