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P. Kühne

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cond-mat.mes-hall cond-mat.mtrl-sci physics.optics

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preprint2015arXiv

Cavity-enhanced optical Hall effect in two-dimensional free charge carrier gases detected at terahertz frequencies

The effect of a tunable, externally coupled Fabry-Pérot cavity to resonantly enhance the optical Hall effect signatures at terahertz frequencies produced by a traditional Drude-like two-dimensional electron gas is shown and discussed in this communication. As a result, the detection of optical Hall effect signatures at conveniently obtainable magnetic fields, for example by neodymium permanent magnets, is demonstrated. An AlInN/GaN-based high electron mobility transistor structure grown on a sapphire substrate is used for the experiment. The optical Hall effect signatures and their dispersions, which are governed by the frequency and the reflectance minima and maxima of the externally coupled Fabry-Pérot cavity, are presented and discussed. Tuning the externally coupled Fabry-Pérot cavity strongly modifies the optical Hall effect signatures, which provides a new degree of freedom for optical Hall effect experiments in addition to frequency, angle of incidence and magnetic field direction and strength.

preprint2015arXiv

Infrared dielectric function, phonon modes and free-charge carrier properties of high-Al-content Al $_x$ Ga $_{1-x}$ N alloys determined by mid-infrared spectroscopic ellipsometry and optical Hall effect

The phonon mode parameters and anisotropic mid-infrared dielectric function tensor components of high- Al-content Al $_x$ Ga $_{1-x}$ N alloys in dependence of the Al content $x$ are precisely determined from mid-infrared spectroscopic ellipsometry measurements for a set of high-quality Si-doped Al $_x$ Ga $_{1-x}$ N epitaxial layers on 4H-SiC substrates. Two-mode behavior of the $E_1$ (TO) modes and one-mode behavior of the $A_1$ (LO) mode are found in agreement with previous Raman scattering spectroscopy reports. The composition dependencies of the IR active phonon frequency parameters are established and a discussion on the silent $B_1$ mode that may be disorder activated is provided. The static dielectric constants in dependence of $x$ are determined by using the best-match model derived phonon mode frequency and high-frequency dielectric constant parameters and applying the Lydanne-Sachs-Teller relation. The effective mass parameter in high-Al-content Al $_x$ Ga $_{1-x}$ N alloys and its composition dependence are determined from mid-infrared optical Hall effect measurements. Furtheremore, the free electron concentration $N$ and mobility parameters $μ$ of Al $_x$ Ga $_{1-x}$ N films with similar Si doping levels are investigated as function of the Al content, $x$ and discussed.

preprint2014arXiv

An integrated mid-infrared, far-infrared and terahertz optical Hall effect instrument

We report on the development of the first integrated mid-infrared, far-infrared and terahertz optical Hall effect instrument, covering an ultra wide spectral range from 3 cm $^{-1}$ to 7000 cm $^{-1}$ (0.1-210 THz or 0.4-870 meV). The instrument comprises four sub-systems, where the magneto-cryostat-transfer sub-system enables the usage of the magneto-cryostat sub-system with the mid-infrared ellipsometer sub-system, and the far-infrared/terahertz ellipsometer sub-system. Both ellipsometer sub-systems can be used as variable angle-of-incidence spectroscopic ellipsometers in reflection or transmission mode, and are equipped with multiple light sources and detectors. The ellipsometer sub-systems are operated in polarizer-sample-rotating-analyzer configuration granting access to the upper left $3\times 3$ block of the normalized $4\times 4$ Mueller matrix. The closed cycle magneto-cryostat sub-system provides sample temperatures between room temperature and 1.4 K and magnetic fields up to 8 T, enabling the detection of transverse and longitudinal magnetic field-induced birefringence. We discuss theoretical background and practical realization of the integrated mid-infrared, far-infrared and terahertz optical Hall effect instrument, as well as acquisition of optical Hall effect data and the corresponding model analysis procedures. Exemplarily, epitaxial graphene grown on 6H-SiC, a tellurium doped bulk GaAs sample and an AlGaN/GaN high electron mobility transistor structure are investigated. The selected experimental datasets display the full spectral, magnetic field and temperature range of the instrument and demonstrate data analysis strategies. Effects from free charge carriers in two dimensional confinement and in a volume material, as well as quantum mechanical effects (inter-Landau-level transitions) are observed and discussed exemplarily.

preprint2013arXiv

Electron effective mass in Al $_{0.72}$ Ga $_{0.28}$ N alloys determined by mid-infrared optical Hall effect

The effective electron mass parameter in Si-doped Al $_{0.72}$ Ga $_{0.28}$ N is determined to be $m^\ast=(0.336\pm0.020)\,m_0$ from mid-infrared optical Hall effect measurements. No significant anisotropy of the effective electron mass parameter is found supporting theoretical predictions. Assuming a linear change of the effective electron mass with the Al content in AlGaN alloys and $m^\ast=0.232\,m_0$ for GaN, an average effective electron mass of $m^\ast=0.376\,m_0$ can be extrapolated for AlN. The analysis of mid-infrared spectroscopic ellipsometry measurements further confirms the two phonon mode behavior of the E $_1$ (TO) and one phonon mode behavior of the A $_1$ (LO) phonon mode in high-Al-content AlGaN alloys as seen in previous Raman scattering studies.

preprint2013arXiv

Polarization selection rules for inter-Landau level transitions in epitaxial graphene revealed by infrared optical Hall effect

We report on polarization selection rules of inter-Landau level transitions using reflection-type optical Hall effect measurements from 600 to 4000 cm-1 on epitaxial graphene grown by thermal decomposition of silicon carbide. We observe symmetric and anti-symmetric signatures in our data due to polarization preserving and polarization mixing inter-Landau level transitions, respectively. From field-dependent measurements we identify that transitions in decoupled graphene mono-layers are governed by polarization mixing selection rules, whereas transitions in coupled graphene mono-layers are governed by polarization preserving selection rules. The selection rules may find explanation by different coupling mechanisms of inter-Landau level transitions with free charge carrier magneto-optic plasma oscillations.

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P. Kühne

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5 publications

Cavity-enhanced optical Hall effect in two-dimensional free charge carrier gases detected at terahertz frequencies

Infrared dielectric function, phonon modes and free-charge carrier properties of high-Al-content Al $_x$ Ga $_{1-x}$ N alloys determined by mid-infrared spectroscopic ellipsometry and optical Hall effect

An integrated mid-infrared, far-infrared and terahertz optical Hall effect instrument

Electron effective mass in Al $_{0.72}$ Ga $_{0.28}$ N alloys determined by mid-infrared optical Hall effect

Polarization selection rules for inter-Landau level transitions in epitaxial graphene revealed by infrared optical Hall effect

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P. Kühne

Research overview

Is this your work?

5 publications

Cavity-enhanced optical Hall effect in two-dimensional free charge carrier gases detected at terahertz frequencies

Infrared dielectric function, phonon modes and free-charge carrier properties of high-Al-content Alx_xx​Ga1−x_{1-x}1−x​N alloys determined by mid-infrared spectroscopic ellipsometry and optical Hall effect

An integrated mid-infrared, far-infrared and terahertz optical Hall effect instrument

Electron effective mass in Al0.72_{0.72}0.72​Ga0.28_{0.28}0.28​N alloys determined by mid-infrared optical Hall effect

Polarization selection rules for inter-Landau level transitions in epitaxial graphene revealed by infrared optical Hall effect

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Building this map preview

Infrared dielectric function, phonon modes and free-charge carrier properties of high-Al-content Al $_x$ Ga $_{1-x}$ N alloys determined by mid-infrared spectroscopic ellipsometry and optical Hall effect

Electron effective mass in Al $_{0.72}$ Ga $_{0.28}$ N alloys determined by mid-infrared optical Hall effect