Researcher profile

S. Roorda

S. Roorda contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hall cond-mat.mtrl-sci cond-mat.str-el cond-mat.supr-con physics.optics quant-ph

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preprint2021arXiv

T centres in photonic silicon-on-insulator material

Global quantum networks will benefit from the reliable creation and control of high-performance solid-state telecom photon-spin interfaces. T radiation damage centres in silicon provide a promising photon-spin interface due to their narrow O-band optical transition near 1326 nm and long-lived electron and nuclear spin lifetimes. To date, these defect centres have only been studied as ensembles in bulk silicon. Here, we demonstrate the reliable creation of high concentration T centre ensembles in the 220 nm device layer of silicon-on-insulator (SOI) wafers by ion implantation and subsequent annealing. We then develop a method that uses spin-dependent optical transitions to benchmark the characteristic optical spectral diffusion within these T centre ensembles. Using this new technique, we show that with minimal optimization to the fabrication process high densities of implanted T centres localized $\lesssim$100 nm from an interface display ~1 GHz characteristic levels of total spectral diffusion.

preprint2013arXiv

Surfactant mediated growth of ferromagnetic Mn δ-doped Si

We present an investigation of Mn δ-doped layers in Si(001) grown by molecular beam epitaxy. We discovered that a Pb surfactant has significant effect on the structural and magnetic properties of the submonolayer of Mn, which depends on the Si capping layer growth temperature, T_Si, and the Mn coverage, θ_Mn. The results presented in this paper identify three regions in the growth-phase-diagram characterized by distinct magnetic behaviors and crystal structures. In one region, X-ray absorption fine structure (XAFS) and transmission electron microscopy (TEM) experiments indicate that MnSi nanocrystallites form with B2-like crystal type structures. At the optimal growth conditions, T_Si = 200 C and θ_Mn = 0.26 monolayer, a ferromagnetic phase develops with a Curie temperature T_C > 400 K and a saturation moment m_sat = 1.56 μ_B/Mn, whereas T_C drops to zero for a control sample prepared without Pb. For T_Si > 200 C, MnSi-B20 type precipitates form with a T_C ~ 170 K. Rutherford backscattering spectroscopy shows that the increase in the remanent magnetization in these two phases is possibly correlated with an increase in the Mn substitutional fraction, which suggests that a Si_{1-x}Mn_x dilute magnetic semiconductor may be forming in the matrix between the precipitates. Density functional calculations show that Pb changes the pathway by which the Mn atoms access the Si substitutional sites, Mn_Si. While the Pb increases the formation energy of Mn_Si at the Si surface, it enables substitutional incorporation by lowering the formation energy of Si vacancies by 0.92 eV.

preprint2010arXiv

Wilson ratio in Yb-substituted CeCoIn5

We have investigated the effect of Yb substitution on the Pauli limited, heavy fermion superconductor, CeCoIn$_5$. Yb acts as a non-magnetic divalent substituent for Ce throughout the entire doping range, equivalent to hole doping on the rare earth site. We found that the upper critical field in (Ce,Yb)CoIn$_5$ is Pauli limited, yet the reduced (H,T) phase diagram is insensitive to disorder, as expected in the purely orbitally limited case. We use the Pauli limiting field, the superconducting condensation energy and the electronic specific heat coefficient to determine the Wilson ratio ($R_{W}$), the ratio of the specific heat coefficient to the Pauli susceptibility in CeCoIn$_5$. The method is applicable to any Pauli limited superconductor in the clean limit.