Researcher profile

S. Memaran

S. Memaran contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hall cond-mat.mtrl-sci cond-mat.str-el

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preprint2016arXiv

Uncovering the behavior of Hf2Te2P and the candidate Dirac metal Zr2Te2P

Results are reported for single crystal specimens of Hf$_2$Te$_2$P and compared to its structural analogue Zr$_2$Te$_2$P, which was recently proposed to be a potential reservoir for Dirac physics.[1] Both materials are produced using the iodine vapor transport method and the resulting crystals are exfoliable. The bulk electrical transport and thermodynamic properties indicate Fermi liquid behavior at low temperature for both compounds. Quantum oscillations are observed in magnetization measurements for fields applied parallel but not perpendicular to the $c$-axis, suggesting that the Fermi surfaces are quasi-two dimensional. Frequencies are determined from quantum oscillations for several parts of the Fermi surfaces. Lifshitz-Kosevich fits to the temperature dependent amplitudes of the oscillations reveal small effective masses, with a particularly small value $m^*$ $=$ 0.046$m_0$ for the α branch of Zr$_2$Te$_2$P. Electronic structure calculations are in good agreement with quantum oscillation results and illustrate the effect of a stronger spin-orbit interaction going from Zr to Hf. These results suggest that by using appropriate tuning parameters this class of materials may deepen the pool of novel Dirac phenomena.

preprint2015arXiv

Hall and field-effect mobilities in few layered $p$-WSe$_2$ field-effect transistors

Here, we present a temperature ($T$) dependent comparison between field-effect and Hall mobilities in field-effect transistors based on few-layered WSe$_2$ exfoliated onto SiO$_2$. Without dielectric engineering and beyond a $T$-dependent threshold gate-voltage, we observe maximum hole mobilities approaching 350 cm$^2$/Vs at $T$=300 K. The hole Hall mobility reaches a maximum value of 650 cm$^2$/Vs as $T$ is lowered below $\sim$ 150 K, indicating that insofar WSe$_2$-based field-effect transistors (FETs) display the largest Hall mobilities among the transition metal dichalcogenides. The gate capacitance, as extracted from the Hall-effect, reveals the presence of spurious charges in the channel, while the two-terminal sheet resistivity displays two-dimensional variable-range hopping behavior, indicating carrier localization induced by disorder at the interface between WSe$_2$ and SiO$_2$. We argue that improvements in the fabrication protocols as, for example, the use of a substrate free of dangling bonds are likely to produce WSe$_2$-based FETs displaying higher room temperature mobilities, i.e. approaching those of $p$-doped Si, which would make it a suitable candidate for high performance opto-electronics.