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Source author record

S. Margadonna

S. Margadonna appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record
cond-mat.supr-concond-mat.str-elcond-mat.mtrl-sci

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Published work

4 published item(s)

preprint2010arXiv

Antiferromagnetic fluctuations in the normal state of LiFeAs

We present a detailed study of 75As NMR Knight shift and spin-lattice relaxation rate in the normal state of stoichiometric polycrystalline LiFeAs. Our analysis of the Korringa relation suggests that LiFeAs exhibits strong antiferromagnetic fluctuations, if transferred hyperfine coupling is a dominant interaction between 75As nuclei and Fe electronic spins, whereas for an on-site hyperfine coupling scenario, these are weaker, but still present to account for our experimental observations. Density-functional calculations of electric field gradient correctly reproduce the experimental values for both 75As and 7Li sites.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Nd induced Mn spin-reorientation transition in NdMnAsO

A combination of synchrotron X-ray, neutron powder diffraction, magnetization, heat capacity and electrical resistivity measurements reveals that NdMnAsO is an antiferromagnetic semiconductor with large Neel temperature (TN = 359(2) K). At room temperature the magnetic propagation vector k = 0 and the Mn moments are directed along the crystallographic c-axis (mMn = 2.41(6) BM). Upon cooling a spin reorientation (SR) transition of the Mn moments into the ab-plane occurs (TSR = 23 K). This coincides with the long range ordering of the Nd moments, which are restricted to the basal plane. The magnetic propagation vector remains k = 0. At base temperature (1.6 K) the fitted moments are mab,Mn = 3.72(1) BM and mab,Nd = 1.94(1) BM. The electrical resistivity is characterized by a broad maximum at 250 K, below which it has a metallic temperature dependence but semiconducting magnitude (rho250K = 50 Ohm cm, residual resistivity ratio = 2), and a slight upturn at the SR transition.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Strong electron correlations in the normal state of FeSe0.42Te0.58

We investigate the normal state of the '11' iron-based superconductor FeSe0.42Te0.58 by angle resolved photoemission. Our data reveal a highly renormalized quasiparticle dispersion characteristic of a strongly correlated metal. We find sheet dependent effective carrier masses between ~ 3 - 16 m_e corresponding to a mass enhancement over band structure values of m*/m_band ~ 6 - 20. This is nearly an order of magnitude higher than the renormalization reported previously for iron-arsenide superconductors of the '1111' and '122' families but fully consistent with the bulk specific heat.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Pressure evolution of low-temperature crystal structure and bonding of 37 K $T_c$ FeSe superconductor

FeSe with the PbO structure is a key member of the family of new high-$T_c$ iron pnictide and chalcogenide superconductors, as while it possesses the basic layered structural motif of edge-sharing distorted FeSe$_4$ tetrahedra, it lacks interleaved ion spacers or charge-reservoir layers. We find that application of hydrostatic pressure first rapidly increases $T_c$ which attains a broad maximum of 37 K at $\sim$7 GPa (this is one of the highest $T_c$ ever reported for a binary solid) before decreasing to 6 K upon further compression to $\sim$14 GPa. Complementary synchrotron X-ray diffraction at 16 K was used to measure the low-temperature isothermal compressibility of $α$-FeSe, revealing an extremely soft solid with a bulk modulus, $K_0$ = 30.7(1.1) GPa and strong bonding anisotropy between inter- and intra-layer directions that transforms to the more densely packed $β$-polymorph above $\sim$9 GPa. The non-monotonic $T_c$($P$) behavior of FeSe coincides with drastic anomalies in the pressure evolution of the interlayer spacing, pointing to the key role of this structural feature in modulating the electronic properties.

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