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S. Lichtmannecker

S. Lichtmannecker contributes to research discovery and scholarly infrastructure.

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Published work

4 published item(s)

preprint2016arXiv

A few-emitter solid-state multi-exciton laser

We report a combined experimental and theoretical study of non-conventional lasing from higher multi-exciton states of a few quantum dot-photonic crystal nanocavity. We show that the photon output is fed from saturable quantum emitters rather than a non-saturable background despite being rather insensitive to the spectral position of the mode. Although the exciton transitions of each quantum dot are detuned by up to $160$ cavity linewidths, we observe that strong excitation populates a multitude of closely spaced multi-exciton states, which partly overlap spectrally with the mode. The limited number of emitters is confirmed by a complete saturation of the mode intensity at strong pumping, providing sufficient gain to reach stimulated emission, whilst being accompanied by a distinct lasing threshold. Detailed second-order photon-correlation measurements unambiguously identify the transition to lasing for strong pumping and, most remarkably, reveal super-thermal photon bunching with $g^{(2)}(0)>2$ below lasing threshold. Based on our microscopic theory, a pump-rate dependent $β$-factor $β(P)$ is needed to describe the nanolaser and account for the interplay of multi-exciton transitions in the few-emitter gain medium. Moreover, we theoretically predict that the super-thermal bunching is related to dipole-anticorrelated multi-exciton recombination channels via sub- and super-radiant coupling below and above lasing threshold, respectively. Our results provide new insights into the microscopic light-matter-coupling of spatially separated emitters coupled to a common cavity mode and, thus, provides a complete understanding of stimulated emission in nanolasers with discrete emitters.

preprint2014arXiv

A carrier relaxation bottleneck probed in single InGaAs quantum dots using integrated superconducting single photon detectors

Using integrated superconducting single photon detectors we probe ultra-slow exciton capture and relaxation dynamics in single self-assembled InGaAs quantum dots embedded in a GaAs ridge waveguide. Time-resolved luminescence measurements performed with on- and off-chip detection reveal a continuous decrease in the carrier relaxation time from 1.22 $\pm$ 0.07 ns to 0.10 $\pm$ 0.07 ns upon increasing the number of non-resonantly injected carriers. By comparing off-chip time-resolved spectroscopy with spectrally integrated on-chip measurements we identify the observed dynamics in the rise time ($τ_r$) as arising from a relaxation bottleneck at low excitation levels. From the comparison with the temporal dynamics of the single exciton transition with the on-chip emission signal, we conclude that the relaxation bottleneck is circumvented by the presence of charge carriers occupying states in the bulk material and the two-dimensional wetting layer continuum. A characteristic -2/3 power law dependence of the rise time is observed suggesting Auger-type scattering between carriers trapped in the quantum dot and the two-dimensional wetting layer continuum which circumvents the phonon relaxation bottleneck.

preprint2013arXiv

Emitters of $N$-photon bundles

We propose a scheme based on the coherent excitation of a two-level system in a cavity to generate an ultrabright CW and focused source of quantum light that comes in groups (bundles) of $N$ photons, for an integer $N$ tunable with the frequency of the exciting laser. We define a new quantity, the \emph{purity} of $N$-photon emission, to describe the percentage of photons emitted in bundles, thus bypassing the limitations of Glauber correlation functions. We focus on the case $1\le N\le3$ and show that close to 100% of two-photon emission and 90% of three-photon emission is within reach of state of the art cavity QED samples. The statistics of the bundles emission shows that various regimes---from $N$-photon lasing to $N$-photon guns---can be realized. This is evidenced through generalized correlation functions that extend the standard definitions to the multi-photon level.

preprint2011arXiv

A Correlation between the Emission Intensity of Self-Assembled Germanium Islands and the Quality Factor of Silicon Photonic Crystal Nanocavities

We present a comparative micro-photoluminescence study of the emission intensity of self-assembled germanium islands coupled to the resonator mode of two-dimensional silicon photonic crystal defect nanocavities. The emission intensity is investigated for cavity modes of L3 and Hexapole cavities with different cavity quality factors. For each of these cavities many nominally identical samples are probed to obtain reliable statistics. As the quality factor increases we observe a clear decrease in the average mode emission intensity recorded under comparable optical pumping conditions. This clear experimentally observed trend is compared with simulations based on a dissipative master equation approach that describes a cavity weakly coupled to an ensemble of emitters. We obtain evidence that reabsorption of photons emitted into the cavity mode is responsible for the observed trend. In combination with the observation of cavity linewidth broadening in power dependent measurements, we conclude that free carrier absorption is the limiting effect for the cavity mediated light enhancement under conditions of strong pumping.