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S. James Allen

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Published work

16 published item(s)

preprint2016arXiv

Coherent phenomena in terahertz 2D plasmonic structures: strong coupling, plasmonic crystals, and induced transparency by coupling of localized modes

The device applications of plasmonic systems such as graphene and two dimensional electron gases (2DEGs) in III-V heterostructures include terahertz detectors, mixers, oscillators and modulators. These two dimensional (2D) plasmonic systems are not only well-suited for device integration, but also enable the broad tunability of underdamped plasma excitations via an applied electric field. We present demonstrations of the coherent coupling of multiple voltage tuned GaAs/AlGaAs 2D plasmonic resonators under terahertz irradiation. By utilizing a plasmonic homodyne mixing mechanism to downconvert the near field of plasma waves to a DC signal, we directly detect the spectrum of coupled plasmonic micro-resonator structures at cryogenic temperatures. The 2DEG in the studied devices can be interpreted as a plasmonic waveguide where multiple gate terminals control the 2DEG kinetic inductance. When the gate tuning of the 2DEG is spatially periodic, a one-dimensional finite plasmonic crystal forms. This results in a subwavelength structure, much like a metamaterial element, that nonetheless Bragg scatters plasma waves from a repeated crystal unit cell. A 50% in situ tuning of the plasmonic crystal band edges is observed. By introducing gate-controlled defects or simply terminating the lattice, localized states arise in the plasmonic crystal. Inherent asymmetries at the finite crystal boundaries produce an induced transparency-like phenomenon due to the coupling of defect modes and crystal surface states known as Tamm states. The demonstrated active control of coupled plasmonic resonators opens previously unexplored avenues for sensitive direct and heterodyne THz detection, planar metamaterials, and slow-light devices.

preprint2016arXiv

Induced transparency by coupling of Tamm and defect states in tunable terahertz plasmonic crystals

Photonic crystals and metamaterials have emerged as two classes of tailorable materials that enable precise control of light. Plasmonic crystals, which can be thought of as photonic crystals fabricated from plasmonic materials, Bragg scatter incident electromagnetic waves from a repeated unit cell. However, plasmonic crystals, like metamaterials, are composed of subwavelength unit cells. Here, we study terahertz plasmonic crystals of several periods in a two dimensional electron gas. This plasmonic medium is both extremely subwavelength ($\approx λ/100$) and reconfigurable through the application of voltages to metal electrodes. Weakly localized crystal surface states known as Tamm states are observed. By introducing an independently controlled plasmonic defect that interacts with the Tamm states, we demonstrate a frequency agile electromagnetically induced transparency phenomenon. The observed 50% ${\it in-situ}$ tuning of the plasmonic crystal band edges should be realizable in materials such as graphene to actively control the plasmonic crystal dispersion in the infrared.

preprint2016arXiv

Inducing an Incipient Terahertz Finite Plasmonic Crystal in Coupled Two Dimensional Plasmonic Cavities

We measured a change in the current transport of an antenna-coupled, multi-gate, GaAs/AlGaAs field-effect transistor when terahertz electromagnetic waves irradiated the transistor and attribute the change to bolometric heating of the electrons in the two-dimensional electron channel. The observed terahertz absorption spectrum indicates coherence between plasmons excited under adjacent biased device gates. The experimental results agree quantitatively with a theoretical model we developed that is based on a generalized plasmonic transmission line formalism and describes an evolution of the plasmonic spectrum with increasing electron density modulation from homogeneous to the crystal limit. These results demonstrate an electronically induced and dynamically tunable plasmonic band structure.

preprint2016arXiv

Interferometric Measurement of Far Infrared Plasmons via Resonant Homodyne Mixing

We present an electrically tunable terahertz two dimensional plasmonic interferometer with an integrated detection element that down converts the terahertz fields to a DC signal. The integrated detector utilizes a resonant plasmonic homodyne mixing mechanism that measures the component of the plasma waves in-phase with an excitation field functioning as the local oscillator. Plasmonic interferometers with two independently tuned paths are studied. These devices demonstrate a means for developing a spectrometer-on-a-chip where the tuning of electrical length plays a role analogous to that of physical path length in macroscopic Fourier transform interferometers.

preprint2015arXiv

High-precision gigahertz-to-terahertz spectroscopy of aqueous salt solutions as a probe of the femtosecond-to-picosecond dynamics of liquid water

Because it is sensitive to fluctuations occurring over femtoseconds to picoseconds, gigahertz-to-terahertz dielectric relaxation spectroscopy can provide a valuable window into water's most rapid intermolecular motions. In response, we have built a vector network analyzer dielectric spectrometer capable of measuring absorbance and index of refraction in this frequency regime with unprecedented precision. Using this to determine the complex dielectric response of water and aqueous salt solutions from 5.9 GHz to 1.12 THz (which we provide in the SI), we have obtained strong new constraints on theories of water's collective dynamics. For example, while the salt-dependencies we observe for water's two slower relaxations (8 and 1 ps) are easily reconciled with suggestions that they arise due to rotations of fully and partially hydrogen bonded molecules, respectively, the salt-dependence of the fastest relaxation (180 fs) appears difficult to reconcile with its prior assignment to liberations of single hydrogen bonds.

preprint2014arXiv

Gaps and pseudo-gaps at the Mott quantum Critical point in the perovskite rare earth nickelates

We report on tunneling measurements that reveal for the first time the evolution of the quasi-particle state density across the bandwidth controlled Mott metal to insulator transition in the rare earth perovskite nickelates. In this, a canonical class of transition metal oxides, we study in particular two materials close to the T=0 metal-insulator transition: NdNiO3 , an antiferromagnetic insulator, and LaNiO3, a correlated metal. We measure a sharp gap in NdNiO3, which has an insulating ground state, of ~ 30 meV. Remarkably, metallic LaNiO3 exhibits a pseudogap of the same order that presages the metal insulator transition. The smallness of both the gap and pseudogap suggests they arise from a common origin: proximity to a quantum critical point at or near the T=0 metal-insulator transition. It also supports theoretical models of the quantum phase transition in terms of spin and charge instabilities of an itinerant Fermi surface.

preprint2014arXiv

High-density two-dimensional small polaron gas in a delta-doped Mott insulator

Heterointerfaces in complex oxide systems open new arenas in which to test models of strongly correlated material, explore the role of dimensionality in metal-insulator-transitions (MITs) and small polaron formation. Close to the quantum critical point Mott MITs depend on band filling controlled by random disordered substitutional doping. Delta-doped Mott insulators are potentially free of random disorder and introduce a new arena in which to explore the effect of electron correlations and dimensionality. Epitaxial films of the prototypical Mott insulator GdTiO3 are delta-doped by substituting a single (GdO)+1 plane with a monolayer of charge neutral SrO to produce a two-dimensional system with high planar doping density. Unlike metallic SrTiO3 quantum wells in GdTiO3 the single SrO delta-doped layer exhibits thermally activated DC and optical conductivity that agree in a quantitative manner with predictions of small polaron transport but with an extremely high two-dimensional density of polarons, ~ 7E14 cm-2

preprint2013arXiv

Subband structure of two-dimensional electron gases in SrTiO3

Tunneling between two parallel, two-dimensional electron gases (2DEGs) in a complex oxide heterostructure containing a large, mobile electron density of ~ 3x10^14 cm^-2 is used to probe the subband structure of the 2DEGs. Temperature-dependent current-voltage measurements are performed on SrTiO3/GdTiO3/SrTiO3 junctions, where GdTiO3 serves as the tunnel barrier, and each interface contains a high-density 2DEG. Resonant tunneling features in the conductance and its derivative occur when subbands on either side of the barrier align in energy as the applied bias is changed, and are used to analyze subband energy spacings in the two 2DEGs. We show that the results agree substantially with recent theoretical predictions for such interfaces.

preprint2012arXiv

Carrier-controlled ferromagnetism in SrTiO3

Magnetotransport and superconducting properties are investigated for uniformly La-doped SrTiO3 films and GdTiO3/SrTiO3 heterostructures, respectively. GdTiO3/SrTiO3 interfaces exhibit a high-density two-dimensional electron gas on the SrTiO3-side of the interface, while for the SrTiO3 films carriers are provided by the dopant atoms. Both types of samples exhibit ferromagnetism at low temperatures, as evidenced by a hysteresis in the magnetoresistance. For the uniformly doped SrTiO3 films, the Curie temperature is found to increase with doping and to coexist with superconductivity for carrier concentrations on the high-density side of the superconducting dome. The Curie temperature of the GdTiO3/SrTiO3 heterostructures scales with the thickness of the SrTiO3 quantum well. The results are used to construct a stability diagram for the ferromagnetic and superconducting phases of SrTiO3.

preprint2012arXiv

Quantum oscillations from a two-dimensional electron gas at a Mott/band insulator interface

We report on the magnetotransport properties of a prototype Mott insulator/band insulator perovskite heterojunction in magnetic fields up to 31 T and at temperatures between 360 mK and 10 K. Shubnikov-de Haas oscillations in the magnetoresistance are observed. The oscillations are two-dimensional in nature and are interpreted as arising from either a single, spin-split subband or two subbands. In either case, the electron system that gives rise to the oscillations represents only a fraction of the electrons in the space charge layer at the interface. The temperature dependence of the oscillations are used to extract an effective mass of ~ 1 me for the subband(s). The results are discussed in the context of the t2g-states that form the bottom of the conduction band of SrTiO3.

preprint2012arXiv

Spin Wave Scattering in Ferromagnetic Cross

Spin wave scattering in the right angle ferromagnetic cross was measured. Shape anisotropy defined magnetization ground states at zero biasing magnetic fields. Scattering of the spin waves in the center of ferromagnetic cross is strongly dependent on the amplitude and angle of the biasing magnetic field. Micromagnetic simulations indicate that low in-plane biasing magnetic fields rotate the magnetization of the cross center while the arms stay axially magnetized due to the shape anisotropy. We discuss effect of biasing magnetic fields on the spin wave scattering and approaches to an effective spin wave switch based on the fabricated structure.

preprint2012arXiv

Toward an artificial Mott insulator: Correlations in confined, high-density electron liquids in SrTiO3

We investigate correlation physics in high-density, two-dimensional electron liquids that reside in narrow SrTiO3 quantum wells. The quantum wells are remotely doped via an interfacial polar discontinuity and the three-dimensional (3D) carrier density is modulated by changing the width of the quantum well. It is shown that even at 3D densities well below one electron per site, short-range Coulomb interactions become apparent in transport, and an insulating state emerges at a critical density. We also discuss the role of disorder in the insulating state.

preprint2011arXiv

A heterojunction modulation-doped Mott transistor

A heterojunction Mott field effect transistor (FET) is proposed that consists of an epitaxial channel material that exhibits an electron-correlation-induced Mott metal-to-insulator transition. The Mott material is remotely (modulation) doped with a degenerately doped conventional band insulator. An applied voltage modulates the electron transfer from the doped band insulator to the Mott material and produces transistor action by inducing an insulator-to-metal transition. Materials parameters from rare-earth nickelates and SrTiO3 are used to assess the potential of the "modulation-doped Mott FET" (ModMottFET or MMFET) as a next-generation switch. It is shown that the MMFET is characterized by unique "charge gain" characteristics as well as competitive transconductance, small signal gain and current drive.

preprint2011arXiv

Electrostatic carrier doping of GdTiO3/SrTiO3 interfaces

Heterostructures and superlattices consisting of a prototype Mott insulator, GdTiO3, and the band insulator SrTiO3 are grown by molecular beam epitaxy and show intrinsic electronic reconstruction, approximately 1/2 electron per surface unit cell at each GdTiO3/SrTiO3 interface. The sheet carrier densities in all structures containing more than one unit cell of SrTiO3 are independent of layer thicknesses and growth sequences, indicating that the mobile carriers are in a high concentration, two-dimensional electron gas bound to the interface. These carrier densities closely meet the electrostatic requirements for compensating the fixed charge at these polar interfaces. Based on the experimental results, insights into interfacial band alignments, charge distribution and the influence of different electrostatic boundary conditions are obtained.

preprint2011arXiv

Probing the metal-insulator transition of NdNiO3 by electrostatic doping

Modulation of the charge carrier density in a Mott material by remote doping from a highly doped conventional band insulator is proposed to test theoretical predictions of band filling control of the Mott metal-insulator transition without introducing lattice distortions or disorder, as is the case for chemical doping. The approach is experimentally tested using ultrathin (2.5 nm) NdNiO3 films that are epitaxially grown on La-doped SrTiO3 films. We show that remote doping systematically changes the charge carrier density in the NdNiO3 film and causes a moderate shift in the metal-insulator transition temperature. These results are discussed in the context of theoretical models of this class of materials exhibiting a metal-insulator transition.

preprint1997arXiv

Sequential tunneling in doped superlattices: Fingerprints of impurity bands and photon-assisted tunneling

We report a combined theoretical and experimental study of electrical transport in weakly-coupled doped superlattices. Our calculations exhibit negative differential conductivity at sufficiently high electric fields for all dopings. In low-doped samples the presence of impurity bands modifies the current-voltage characteristics substantially and we find two different current peaks whose relative height is changing with the electron temperature. These findings can explain the observation of different peaks in the current-voltage characteristics with and without external THz irradiation in low-doped samples. From our microscopic transport model we obtain quantitative agreement with the experimental current-voltage characteristics without using any fitting parameters. Both our experimental data and our theory show that absolute negative conductance persists over a wide range of frequencies of the free-electron laser source.