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Researcher profile

S. J. Rezvani

S. J. Rezvani contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.str-elcond-mat.mes-hallcond-mat.mtrl-sci

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Published work

2 published item(s)

preprint2020arXiv

Strain induced orbital dynamics across the Metal Insulator transition in thin VO2/TiO2(001) films

VO2 is a strongly correlated material, which undergoes a reversible metal insulator transition (MIT) coupled to a structural phase transition upon heating (T= 67° C). Since its discovery the nature of the insulating state has long been debated and different solid-state mechanisms have been proposed to explain its nature: Mott-Hubbard correlation, Peierls distortion or a combination of both. Moreover, still now there is a lack of consensus on the interplay between the different degrees of freedom: charge, lattice, orbital and how they contribute to the MIT. In this manuscript we will investigate across the MIT the orbital evolution induced by a tensile strain applied to thin VO2 films. The strained films allowed to study the interplay between orbital and lattice degrees of freedom and to clarify MIT properties.

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preprint2020arXiv

Tunable electronic structure and stoichiometry dependent disorder in Nanostructured VO$_x$ films

We present and discuss an original method to synthesize disordered Nanostructured (NS) VO$_x$ films with controlled stoichiometry and tunable electronic structures. In these NS films, the original lattice symmetry of the bulk vanadium oxides is broken and atoms are arranged in a highly disordered structure . The stoichiometry-dependent disorder as a function of the oxygen concentration has been characterized by in-situ X-ray Absorption Near-Edge Structure (XANES) spectroscopy identifying the spectroscopic fingerprints. Results show structural rearrangements that deviate from the octahedral symmetry with different coexisting disordered phases. The modulation of the electronic structure of the NS films based on the resulted stoichiometry and the quantum confinement in the NS particles are also discussed. We demonstrate the possibility to modulate the electronic structure of VO$_x$ NS films accessing new disordered atomic configurations with a controlled stoichiometry that provides an extraordinary opportunity to match a wide number of technological applications.

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