BZPEERReading, trust and collaboration for research
Menu

Discover

GraphFollow connections around a paper, topic or saved view.

Workspaces

HomePick up where your research flow left off.InboxHandle requests, replies and notifications from one place.CollectionsCurate reading lists, evidence sets and shareable dossiers.ResearchSee your private provenance graph, trail and imports.CollaborationMove from discovery into focused discussion rooms.PublishDraft, preview and publish full-text research articles.

Network

ExpertsFind specialists worth following or asking for help.CommunitiesJoin research circles organized around shared work.PartnersSee external organizations active around the same topics.

Opportunities

ListingsBrowse roles, calls and collaborations with clearer fit signals.

Account

Log inReturn to your reading and collaboration workspace.Create accountStart saving work, following people and joining teams.
Log inCreate account

Researcher profile

S. Heun

S. Heun contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-scicond-mat.supr-conphysics.chem-phquant-ph

Trust snapshot

Quick read

Trust 19 - UnverifiedVerification L1Unclaimed author
5works
0followers
5topics
4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Identity and collaboration

How to connect with this researcher

Claiming links this public author record to a researcher profile and unlocks direct collaboration workflows.

Log in to claim

Direct collaboration

Open a focused conversation when the fit is right

Claim this author entity first to unlock direct invitations.

Research graph

See the researcher in context

Open full explorer

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

5 published item(s)

preprint2022arXiv

Metamorphic InAs/InGaAs QWs with electron mobilities exceeding $7\times10^5cm^2/Vs$

We present a study on the influence of strain-relieving InAlAs buffer layers on metamorphic InAs/InGaAs quantum wells grown by molecular beam epitaxy on GaAs. Residual strain in the buffer layer, the InGaAs barrier and the InAs wells were assessed by X-ray diffraction and high-resolution transmission electron microscopy. By carefully choosing the composition profile and thicknesses of the buffer layer, virtually unstrained InGaAs barriers embedding an InAs quantum well with thickness up to 7nm can be grown. This allows reaching low-temperature electron mobilities much higher than previously reported for samples obtained by metamorphic growth on GaAs, and comparable to the values achieved for samples grown on InP substrates.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Theory of scanning gate microscopy imaging of the supercurrent distribution in a planar Josephson junction

We theoretically investigate the mapping of the supercurrent distribution in a planar superconductor-normal-superconductor junction in the presence of a perpendicular magnetic field via the scanning gate microscopy technique. We find that the distribution of counter-propagating supercurrents aligned in Josephson vortices can be mapped by the change of the critical current induced by the tip of the scanning probe, if the flux in the junction is set close to maxima of the Fraunhofer pattern. Instead, when the magnetic field drives the junction to a supercurrent minimum in the Fraunhofer pattern, the superconducting phase adapts, and the tip always increases the supercurrent. The perpendicular magnetic field leads to the formation of Josephson vortices, whose extension for highly transparent junctions depends on the current circulation direction. We show that this leads to an asymmetric supercurrent distribution in the junction and that this can be revealed by scanning gate microscopy. We explain our findings on the basis of numerical calculations for both short- and long-junction limits and provide a phenomenological model for the observed phenomena.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Increasing the active surface of titanium islands on graphene by nitrogen sputtering

Titanium-island formation on graphene as a function of defect density is investigated. When depositing titanium on pristine graphene, titanium atoms cluster and form islands with an average diameter of about 10nm and an average height of a few atomic layers. We show that if defects are introduced in the graphene by ion bombardment, the mobility of the deposited titanium atoms is reduced and the average diameter of the islands decreases to 5nm with monoatomic height. This results in an optimized coverage for hydrogen storage applications since the actual titanium surface available per unit graphene area is significantly increased.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Measurement of Topological Berry Phase in Highly Disordered Graphene

We have observed the quantum Hall effect (QHE) and Shubnikov-de Haas (SdH) oscillations in highly disordered graphene at magnetic fields up to 65 T. Disorder was introduced by hydrogenation of graphene up to a ratio H/C $\approx 0.1\%$. The analysis of SdH oscillations and QHE indicates that the topological part of the Berry phase, proportional to the pseudo-spin winding number, is robust against introduction of disorder by hydrogenation in large scale graphene.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Selective control of edge-channel trajectories by scanning gate microscopy

Electronic Mach-Zehnder interferometers in the Quantum Hall (QH) regime are currently discussed for the realization of quantum information schemes. A recently proposed device architecture employs interference between two co-propagating edge channels. Here we demonstrate the precise control of individual edge-channel trajectories in quantum point contact devices in the QH regime. The biased tip of an atomic force microscope is used as a moveable local gate to pilot individual edge channels. Our results are discussed in light of the implementation of multi-edge interferometers.

0 citations0 reviewsNo code linkedOpen access