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S. Hassan

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Published work

2 published item(s)

preprint2022arXiv

Model studies of V0 production ratios in $pp$ collisions at $\sqrt{\mathrm{s}}$ = 0.2, 0.9, and 7 TeV

A comparative study of $V^0$ ratios has been performed between HIJING, Sibyll and QGSJET model-based event generators in this paper. The ratios under study are {\alam}/{\lam}, {\alam}/{\ks} and {\xim}/{\lam} as a function of rapidity $y$, rapidity loss ($Δy$) and {\ppt} from $pp$ collisions at \sqrts~= 0.2, 0.9, and 7 TeV and these simulations are then compared with the STAR and LHCb fiducial phase spaces in different {\ppt} regions. Although the models could produce some of the ratios in a limited {\ppt} and/or $y$ region, none of them completely predicts the experimental results. The QGSJET has good predictions with the data in most of the cases but since the model does not include the $Ξ$ particle definition, therefore it does not give any predictions for $Ξ$/{\lam} ratios. The extrapolation to the highest possible energies can be studied by re-tune some of the basic parameters based on current and previous measurements. These kinds of systematic comparison studies are also useful to apply certain constraints on the pQCD and non-pQCD-based hadronic event generators to significantly improve the predictions of Standard Model physics at the RHIC and LHC experimental data for the understanding of underlying physics mechanisms in high energy collisions.

preprint2015arXiv

Four-Terminal Mechanically Stacked GaAs/Si Tandem Solar Cells

This study investigates a four-terminal mechanically stacked double junction photovoltaic device based on GaAs as a top subcell and Si as a bottom subcell. Unlike two terminal monolithically series connected double junction photovoltaics, four-terminal mechanically stacked devices benefit from the ability to choose a combination of materials that are not constrained to lattice matching condition. GaAs top subcell is the best sensitive to visible light and Si bottom subcell is chosen to be grown on Si substrate which has relatively low cost. Moreover, the carriers generated by each subcell is collected independently to the external circuit. This electrical isolation of the subcells ensures higher efficiency, where no current matching nor tunnel junctions and related losses exist. A conversion efficiency of the device with a thickness in the order of 10 microns surpassed 27%.