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L. L. Li

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Published work

2 published item(s)

preprint2022arXiv

Model studies of V0 production ratios in $pp$ collisions at $\sqrt{\mathrm{s}}$ = 0.2, 0.9, and 7 TeV

A comparative study of $V^0$ ratios has been performed between HIJING, Sibyll and QGSJET model-based event generators in this paper. The ratios under study are {\alam}/{\lam}, {\alam}/{\ks} and {\xim}/{\lam} as a function of rapidity $y$, rapidity loss ($Δy$) and {\ppt} from $pp$ collisions at \sqrts~= 0.2, 0.9, and 7 TeV and these simulations are then compared with the STAR and LHCb fiducial phase spaces in different {\ppt} regions. Although the models could produce some of the ratios in a limited {\ppt} and/or $y$ region, none of them completely predicts the experimental results. The QGSJET has good predictions with the data in most of the cases but since the model does not include the $Ξ$ particle definition, therefore it does not give any predictions for $Ξ$/{\lam} ratios. The extrapolation to the highest possible energies can be studied by re-tune some of the basic parameters based on current and previous measurements. These kinds of systematic comparison studies are also useful to apply certain constraints on the pQCD and non-pQCD-based hadronic event generators to significantly improve the predictions of Standard Model physics at the RHIC and LHC experimental data for the understanding of underlying physics mechanisms in high energy collisions.

preprint2012arXiv

Polarization-driven topological insulator transition in a GaN/InN/GaN quantum well

Topological insulator (TI) states have been demonstrated in materials with narrow gap and large spin-orbit interactions (SOI). Here we demonstrate that nanoscale engineering can also give rise to a TI state, even in conventional semiconductors with sizable gap and small SOI. Based on advanced first-principles calculations combined with an effective low-energy k*p Hamiltonian, we show that the intrinsic polarization of materials can be utilized to simultaneously reduce the energy gap and enhance the SOI, driving the system to a TI state. The proposed system consists of ultrathin InN layers embedded into GaN, a layer structure that is experimentally achievable.