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Researcher profile

S. H. Rhim

S. H. Rhim contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-scicond-mat.supr-concond-mat.mes-hallcond-mat.str-el

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Published work

4 published item(s)

preprint2020arXiv

Enhanced voltage-controlled magnetic anisotropy via magneto-elasticity in FePt/MgO(001)

The interplay between magneto-electricity (ME) and magneto-elasticity (MEL) is studied in the context of voltage-controlled magnetic anisotropy (VCMA). Strain plays more than a role of changing lattice constant but that of the internal electric field in the heterostructure. As a prototype, FePt/MgO(001) is visited, where the behavior of two interfaces are drastically different: one exhibits switching the other does not. Whether an external electric field ($E_{ext}$) is present or not, we found VCMA coefficient larger than 1 pJ/V$\cdot$m, as a consequence of the rearrangement of $d$ orbitals with $m=\pm1$ and $\pm2$ in response to an external electric field. In addition, magneto-crystalline anisotropy (MA) is analyzed with strain taken into account, where non-linear feature is presented only accountable by invoking second-order MEL.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Role of spin-orbit coupling on the electronic structure and properties of SrPtAs

The effect of spin-orbit coupling on the electronic structure of the layered iron-free pnictide superconductor, SrPtAs, has been studied using the full potential linearized augmented plane wave method. The anisotropy in Fermi velocity, conductivity and plasma frequency stemming from the layered structure are found to be enhanced by spin-orbit coupling. The relationship between spin-orbit interaction and the lack of two-dimensional inversion in the PtAs layers is analyzed within a tight-binding Hamiltonian based on the first-principles calculations. Finally, the band structure suggests that electron doping could increase $T_c$.

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preprint2011arXiv

Hexagonal pnictide SrPtAs: superconductivity with locally broken inversion symmetry

Unlike other pnictides, SrPtAs has a hexagonal structure, containing layers with As-Pt atoms that form a honeycomb lattice. These layers lack inversion symmetry which allows for a spin-orbit coupling that we show has a dramatic effect on superconductivity in this material. In particular, for conventional s-wave superconductivity in SrPtAs, both the spin susceptibility and the paramagnetic limiting field are enhanced significantly with respect to that usually expected for s-wave superconductors. SrPtAs provides a prime example of a superconductor with locally broken inversion symmetry.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Epitaxial graphene on SiC(0001): More than just honeycombs

The potential of graphene to impact the development of the next generation of electronics has renewed interest in its growth and structure. The graphitization of hexagonal SiC surfaces provides a viable alternative for the synthesis of graphene, with wafer-size epitaxial graphene on SiC(0001) now possible. Despite this recent progress, the exact nature of the graphene-SiC interface and whether the graphene even has a semiconducting gap remain controversial. Using scanning tunneling microscopy with functionalized tips and density functional theory calculations, here we show that the interface is a warped carbon sheet consisting of three-fold hexagon-pentagon-heptagon complexes periodically inserted into the honeycomb lattice. These defects relieve the strain between the graphene layer and the SiC substrate, while still retaining the three-fold coordination for each carbon atom. Moreover, these defects break the six-fold symmetry of the honeycomb, thereby naturally inducing a gap: the calculated band structure of the interface is semiconducting and there are two localized states near K below the Fermi level, explaining the photoemission and carbon core-level data. Nonlinear dispersion and a 33 meV gap are found at the Dirac point for the next layer of graphene, providing insights into the debate over the origin of the gap in epitaxial graphene on SiC(0001). These results indicate that the interface of the epitaxial graphene on SiC(0001) is more than a dead buffer layer, but actively impacts the physical and electronic properties of the subsequent graphene layers.

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