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S. H. Rhim

S. H. Rhim appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.supr-concond-mat.mes-hallcond-mat.str-el

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Published work

12 published item(s)

preprint2020arXiv

Enhanced voltage-controlled magnetic anisotropy via magneto-elasticity in FePt/MgO(001)

The interplay between magneto-electricity (ME) and magneto-elasticity (MEL) is studied in the context of voltage-controlled magnetic anisotropy (VCMA). Strain plays more than a role of changing lattice constant but that of the internal electric field in the heterostructure. As a prototype, FePt/MgO(001) is visited, where the behavior of two interfaces are drastically different: one exhibits switching the other does not. Whether an external electric field ($E_{ext}$) is present or not, we found VCMA coefficient larger than 1 pJ/V$\cdot$m, as a consequence of the rearrangement of $d$ orbitals with $m=\pm1$ and $\pm2$ in response to an external electric field. In addition, magneto-crystalline anisotropy (MA) is analyzed with strain taken into account, where non-linear feature is presented only accountable by invoking second-order MEL.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Density Functional Theory study on the electronic structure and thermoelectric properties of strained Mn4Si7

The strain effect on electronic structure and thermoelectric properties of Higher Manganese Silicides (HMSs) Mn4Si7 was studied using Density Functional Theory (DFT) and through solving Boltzman Transport Equation (BTE). We found that the tensile strain attempts to reduce the band gap while the compressive strain not much affect to band gap. The Seebeck coeficient was found to be increased with increasing temperature, which is very consistent to experiments. The electrical conductivity and power factor show highly degree of anisotropy, where in-plane direction is more dominant. The different behavior of electrical conductivity along in-plane and outof plane direction was explained due to the change of band dispersion in the valence band maximum (VBM).

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Superconductivity in CuCl/Si: possible excitonic pairing?

The search for superconductivity with higher transition temperature ($T_C$) has long been a challenge in research efforts ever since its first discovery in 1911. The effort has led to the discovery of various kinds of superconductors and progress in the understanding of this intriguing phenomenon. The increase of $T_C$ has also evolved; however, the dream of realizing room-temperature superconductivity is far from reality. For superconductivity to emerge, the effective quasiparticle interaction should overcome the repulsive Coulomb interaction. This can be realized via lattice or spin degrees of freedom. An alternative pairing mechanism, the excitonic mechanism, was proposed 50 years ago, hoping to achieve higher $T_C$ than by phonon mediation. As none of physics principles has ever prevented excitonic pairing, the excitonic pairing mechanism is revisited here and we show that the effective quasiparticle interaction without lattice and spin can be attractive solely electronically.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

External Modulation and Switching of Acoustic Phonons: Comparative Roles of Potential Distributions

Acoustic phonons can be coherently generated by ultrafast displacive screening of potential gradients, often enhanced by the strong built-in piezoelectric fields, in wurtzite semiconductors. In such structures, transverse symmetry within the c plane hinders both the generation and detection of the transverse acoustic (TA) modes, and only longitudinal acoustic (LA) mode is generated. We show that even for c-GaN, the application of asymmetric potential distributions in the c plane can break the symmetry and selection rules, thus switching on the normally forbidden TA mode. This is in contrast to the LA mode, the strength of which varies with the symmetric potential distributions. By comparing transient differential reflectivity spectra in structures with and without asymmetric potential distributions, the role of the electrically attained anisotropy was further revealed by the digitized appearance of the TA mode, in clear contrast to the monotonic LA mode, and by modulations in the propagation velocities, optical birefringence, and geometrically varying sensitivities, the underlying mechanisms of which are modeled by electric-field-dependent perturbations of the dielectric tensors, incorporating the results of elastic modulations.

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preprint2015arXiv

Jahn-Teller driven perpendicular magnetocrystalline anisotropy in metastable Ruthenium

A new metastable phase of the body-centered-tetragonal ruthenium ({\em bct}--Ru) is identified to exhibit a large perpendicular magnetocrystalline anisotropy (PMCA), whose energy, $E_{MCA}$, is as large as 150 $μ$eV/atom, two orders of magnitude greater than those of 3$d$ magnetic metals. Further investigation over the range of tetragonal distortion suggests that the appearance of the magnetism in the {\em bct}--Ru is governed by the Jahn-Teller spit $e_g$ orbitals. Moreover, from band analysis, MCA is mainly determined by an interplay between two $e_g$ states, $d_{x^2-y^2}$ and $d_{z^2}$ states, as a result of level reversal associated with tetragonal distortion.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

La displacement driven Double-exchange like mediation in Titanium $d_{xy}$ ferromagnetism at the LaAlO$_3$/SrTiO$_3$

The epitaxial atomistic interfaces of two insulating oxides, LaAlO$_3$ (LAO)/SrTiO$_3$ (STO), have attracted great interest owing to rich emergent phenomena \cite{hwang12:nmat,coey13:mrs,ohtomo04:} such as interface metallicity \cite{ohtomo04:,nakagawa06:}, thickness dependent insulator-metal transition \cite{huijben06:nmat}, superconductivity \cite{N.Reyren08312007}, ferromagnetism \cite{brinkman.07:natmat}, and even their coexistence \cite{bert11:nphys,li11:nphys,dikin11:prl}. However, the physics origin of ferromagnetic ordering in the $n$-type LAO/STO interface is in debate. Here we propose that the polar distortion of La atom can ignite the ferromagnetism at the interface even without oxygen vacancy. The induced hybridization between La $d_{z^2}$ and O $p_{x,y}$ states can mediate double-exchange like interaction between Ti $d_{xy}$ electrons. We further suggest that the structural and electrical modification of the outermost surface of LAO or switching the polarization direction of ferroelectric overlayers on LAO/STO can promote such La displacement.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Strain-induced Giant Second-harmonic Generation in Monolayered $2H$-MoX$_2$ (X=S,Se,Te)

Dynamic second-order nonlinear susceptibilities, $χ^{(2)}(2ω,ω,ω)\equiv χ^{(2)}(ω)$, are calculated here within a fully first-principles scheme for monolayered molybdenum dichalcogenides, $2H$-MoX$_2$ (X=S,Se,Te). The absolute values of $χ^{(2)}(ω)$ across the three chalcogens critically depend on the band gap energies upon uniform strain, yielding the highest $χ^{(2)}(0)\sim$ 140 pm/V for MoTe$_2$ in the static limit. Under this uniform in-plane stress, $2H$-MoX$_2$ can undergo direct-to-indirect transition of band gaps, which in turn substantially affects $χ^{(2)}(ω)$. The tunability of $χ^{(2)}(ω)$ by either compressive or tensile strain is demonstrated especially for two important experimental wavelengths, 1064 nm and 800 nm, where resonantly enhanced non-linear effects can be exploited: $χ^{(2)}$ of MoSe$_2$ and MoTe$_2$ approach $\sim$800 pm/V with -2\% strain at 1064 nm.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Surface-termination dependent magnetism and strong perpendicular magnetocrystalline anisotropy of a FeRh (001) thin film: A density-functional study

Magnetism of FeRh (001) films strongly depends on film thickness and surface terminations. While magnetic ground state of bulk FeRh is G-type antiferromagnetism, the Rh-terminated films exhibit ferromagnetism with strong perpendicular MCA whose energy +2.1 meV/$\Box$ is two orders of magnitude greater than 3$d$ magnetic metals, where $\Box$ is area of two-dimensional unit cell. While Goodenough-Kanamori-Anderson rule on the superexchange interaction is crucial in determining the magnetic ground phases of FeRh bulk and thin films, the magnetic phases are results of interplay and competition between three mechanisms - the superexchange interaction, the Zener direct-interaction, and magnetic energy gain.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Theory of perpendicular magnetocrystalline anisotropy in Fe/MgO (001)

The origin of large perpendicular magneto-crystalline anisotropy (PMCA) in Fe/MgO (001) is revealed by comparing Fe layers with and without the MgO. Although Fe-O $p$-$d$ hybridization is weakly present, it cannot be the main origin of the large PMCA as claimed in previous study. Instead, perfect epitaxy of Fe on the MgO is more important to achieve such large PMCA. As an evidence, we show that the surface layer in a clean free-standing Fe (001) dominantly contributes to $E_{MCA}$, while in the Fe/MgO, those by the surface and the interface Fe layers contribute almost equally. The presence of MgO does not change positive contribution from $\langle xz|\ell_Z|yz\rangle$, whereas it reduces negative contribution from $\langle z^2|\ell_X|yz\rangle$ and $\langle xy|\ell_X|xz,yz\rangle$.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Role of spin-orbit coupling on the electronic structure and properties of SrPtAs

The effect of spin-orbit coupling on the electronic structure of the layered iron-free pnictide superconductor, SrPtAs, has been studied using the full potential linearized augmented plane wave method. The anisotropy in Fermi velocity, conductivity and plasma frequency stemming from the layered structure are found to be enhanced by spin-orbit coupling. The relationship between spin-orbit interaction and the lack of two-dimensional inversion in the PtAs layers is analyzed within a tight-binding Hamiltonian based on the first-principles calculations. Finally, the band structure suggests that electron doping could increase $T_c$.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Hexagonal pnictide SrPtAs: superconductivity with locally broken inversion symmetry

Unlike other pnictides, SrPtAs has a hexagonal structure, containing layers with As-Pt atoms that form a honeycomb lattice. These layers lack inversion symmetry which allows for a spin-orbit coupling that we show has a dramatic effect on superconductivity in this material. In particular, for conventional s-wave superconductivity in SrPtAs, both the spin susceptibility and the paramagnetic limiting field are enhanced significantly with respect to that usually expected for s-wave superconductors. SrPtAs provides a prime example of a superconductor with locally broken inversion symmetry.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Epitaxial graphene on SiC(0001): More than just honeycombs

The potential of graphene to impact the development of the next generation of electronics has renewed interest in its growth and structure. The graphitization of hexagonal SiC surfaces provides a viable alternative for the synthesis of graphene, with wafer-size epitaxial graphene on SiC(0001) now possible. Despite this recent progress, the exact nature of the graphene-SiC interface and whether the graphene even has a semiconducting gap remain controversial. Using scanning tunneling microscopy with functionalized tips and density functional theory calculations, here we show that the interface is a warped carbon sheet consisting of three-fold hexagon-pentagon-heptagon complexes periodically inserted into the honeycomb lattice. These defects relieve the strain between the graphene layer and the SiC substrate, while still retaining the three-fold coordination for each carbon atom. Moreover, these defects break the six-fold symmetry of the honeycomb, thereby naturally inducing a gap: the calculated band structure of the interface is semiconducting and there are two localized states near K below the Fermi level, explaining the photoemission and carbon core-level data. Nonlinear dispersion and a 33 meV gap are found at the Dirac point for the next layer of graphene, providing insights into the debate over the origin of the gap in epitaxial graphene on SiC(0001). These results indicate that the interface of the epitaxial graphene on SiC(0001) is more than a dead buffer layer, but actively impacts the physical and electronic properties of the subsequent graphene layers.

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