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A. J. Freeman

A. J. Freeman appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.supr-con

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Published work

7 published item(s)

preprint2016arXiv

Superconductivity in CuCl/Si: possible excitonic pairing?

The search for superconductivity with higher transition temperature ($T_C$) has long been a challenge in research efforts ever since its first discovery in 1911. The effort has led to the discovery of various kinds of superconductors and progress in the understanding of this intriguing phenomenon. The increase of $T_C$ has also evolved; however, the dream of realizing room-temperature superconductivity is far from reality. For superconductivity to emerge, the effective quasiparticle interaction should overcome the repulsive Coulomb interaction. This can be realized via lattice or spin degrees of freedom. An alternative pairing mechanism, the excitonic mechanism, was proposed 50 years ago, hoping to achieve higher $T_C$ than by phonon mediation. As none of physics principles has ever prevented excitonic pairing, the excitonic pairing mechanism is revisited here and we show that the effective quasiparticle interaction without lattice and spin can be attractive solely electronically.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Strain-induced Giant Second-harmonic Generation in Monolayered $2H$-MoX$_2$ (X=S,Se,Te)

Dynamic second-order nonlinear susceptibilities, $χ^{(2)}(2ω,ω,ω)\equiv χ^{(2)}(ω)$, are calculated here within a fully first-principles scheme for monolayered molybdenum dichalcogenides, $2H$-MoX$_2$ (X=S,Se,Te). The absolute values of $χ^{(2)}(ω)$ across the three chalcogens critically depend on the band gap energies upon uniform strain, yielding the highest $χ^{(2)}(0)\sim$ 140 pm/V for MoTe$_2$ in the static limit. Under this uniform in-plane stress, $2H$-MoX$_2$ can undergo direct-to-indirect transition of band gaps, which in turn substantially affects $χ^{(2)}(ω)$. The tunability of $χ^{(2)}(ω)$ by either compressive or tensile strain is demonstrated especially for two important experimental wavelengths, 1064 nm and 800 nm, where resonantly enhanced non-linear effects can be exploited: $χ^{(2)}$ of MoSe$_2$ and MoTe$_2$ approach $\sim$800 pm/V with -2\% strain at 1064 nm.

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preprint2012arXiv

Electronic Structure and Properties of SrAlGe and BaAlGe

The electronic structures of BaAlGe and SrAlGe which are superconductors with hexagonal honeycomb layers have been studied by using a first principles method. Energy bands, Fermi surafces, and density of states are presented. The two materials have topologically different Fermi surfaces. BaAlGe has two Fermi surfaces: One has a three dimensional spinning-top-like shape and the other has a cylindrical shape with two dimensional character. SrAlGe has only one connected Fermi surface. Two gap superconductivity for BaAlGe is suggested from the inherently different character of the two Fermi surfaces. The higher $T_c$ of SrAlGe than BaAlGe is related to the difference in both the topology of the Fermi surface and the band dispersions along the $z$ direction.

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preprint2012arXiv

Role of spin-orbit coupling on the electronic structure and properties of SrPtAs

The effect of spin-orbit coupling on the electronic structure of the layered iron-free pnictide superconductor, SrPtAs, has been studied using the full potential linearized augmented plane wave method. The anisotropy in Fermi velocity, conductivity and plasma frequency stemming from the layered structure are found to be enhanced by spin-orbit coupling. The relationship between spin-orbit interaction and the lack of two-dimensional inversion in the PtAs layers is analyzed within a tight-binding Hamiltonian based on the first-principles calculations. Finally, the band structure suggests that electron doping could increase $T_c$.

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preprint2007arXiv

Magneto-optical properties of (Ga,Mn)As: an ab--initio determination

The magneto-optical properties of (Ga,Mn)As have been determined within density functional theory using the highly precise full-potential linear augmented plane wave (FLAPW) method. A detailed investigation of the electronic and magnetic properties in connection to the magneto-optic effects is reported. The spectral features of the optical tensor in the 0-10 eV energy range are analyzed in terms of the band structure and density of states and the essential role of the dipole matrix elements is highlighted by means of Brillouin zone dissection. Using an explicit representation of the Kerr angle in terms of real and imaginary parts of the tensor components, a careful analysis of the Kerr spectra is also presented. The results of our study can be summarized as follows: i) different types of interband transitions do contribute in shaping the conductivity tensor; ii) the dipole matrix elements are important in obtaining the correct optical spectra; iii) different regions in the irreducible Brillouin zone contribute to the conductivity very differently; iv) a minimum in the Re $σ_{xx}$ spectra can give rise to a large Kerr rotation angle in the same energy region; and v) materials engineering via the magneto-optical Kerr effect is possible provided that the electronic structure of the material can be tuned in such a way as to \emph{enhance} the depth of the minima of Re $σ_{xx}$.

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preprint1997arXiv

Effects of epitaxial strain and ordering direction on the electronic properties of (GaSb)_1/(InSb)_1 and (InAs)_1/(InSb)_1 superlattices

The structural and electronic properties in common anion (GaSb)_1/(InSb)_1 and common cation (InAs)_1/(InSb)_1 [111] ordered superlattices have been determined using the local density total energy full potential linearized augmented plane wave method. The influence of the ordering direction, strain conditions and atomic substitution on the electronic properties of technological and experimental interest (such as energy band-gaps and charge carrier localization in the different sublattices) were determined. The results show an appreciable energy band-gap narrowing compared to the band-gap averaged over the constituent binaries, either in [001] ordered structures or (more markedly) in the [111] systems; moreover energy band-gaps show an increasing trend as the substrate lattice parameter is decreased. Finally, the systems examined offer interesting opportunities for band-gap tuning as a function of the growth condition (about 0.7 eV in (GaSb)_1/(InSb)_1 and 0.3 eV in (InAs)_1/(InSb)_1).

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preprint1997arXiv

Influence of growth direction and strain conditions on the band line-up at GaSb/InSb and InAs/InSb interfaces

First-principles full potential linearized augmented plane wave (FLAPW) calculations have been performed for lattice-mismatched common-atom III-V interfaces. In particular, we have examined the effects of epitaxial strain and ordering direction on the valence band offset in [001] and [111] GaSb/InSb and InAs/InSb superlattices, and found that the valence band maximum is always higher at the InSb side of the heterojunction, except for the common-anion system grown on an InSb substrate. The comparison between equivalent structures having the same substrate lattice constant, but different growth axis, shows that for comparable strain conditions, the ordering direction slightly influences the band line-up, due to small differences of the charge readjustment at the [001] and [111] interfaces. On the other hand, strain is shown to strongly affect the VBO; in particular, as the pseudomorphic growth conditions are varied, the bulk contribution to the band line-up changes markedly, whereas the interface term is almost constant. On the whole, our calculations yield a band line-up that decreases linearly as the substrate lattice constant is increased, showing its high tunability as a function of different pseudomorphic growth conditions. Finally, the band line-up at the lattice matched InAs/GaSb interface determined using the transitivity rule gave perfect agreement between predicted and experimental results.

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