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Researcher profile

S. Fratini

S. Fratini contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-scicond-mat.str-elcond-mat.othercond-mat.dis-nncond-mat.mes-hallcond-mat.softcond-mat.stat-mechcond-mat.supr-con

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Published work

14 published item(s)

preprint2022arXiv

A quantum theory of the nearly frozen charge glass

We study long-range interacting electrons on the triangular lattice using mixed quantum/classical simulations going beyond the usual classical descriptions of the lattice Coulomb fluid. Our results in the strong interaction limit indicate that the emergence and proliferation of quantum defects governs the low-temperature dynamics of this strongly frustrated system, in a way that crucially depends on the degree of anisotropy of the electronic structure. The present theoretical findings explain the phenomenology observed in the $θ$-ET$_2$X charge ordering materials as they fall out of equilibrium. The approach devised here can be easily generalized to address other systems where charge frustration is lifted by quantum fluctuations.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

On dynamical localization corrections to band transport

Bloch-Boltzmann transport theory fails to describe the carrier diffusion in current crystalline organic semiconductors, where the presence of large-amplitude thermal molecular motions causes substantial dynamical disorder. The charge transport mechanism in this original situation is now understood in terms of a transient localization of the carriers' wavefunctions, whose applicability is however limited to the strong disorder regime. In order to deal with the ever-improving performances of new materials, we develop here a unified theoretical framework that includes transient localization theory as a limiting case, and smoothly connects with the standard band description when molecular disorder is weak. The theory, which specifically adresses the emergence of dynamical localization corrections to semiclassical transport, is used to determine a "transport phase diagram" of high-mobility organic semiconductors.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Multiorbital kinetic effects on charge ordering of frustrated electrons on the triangular lattice

The role of the multiorbital effects on the emergence of frustrated electronic orders on the triangular lattice at half filling is investigated through an extended spinless fermion Hubbard model. By using two complementary approaches, unrestricted Hartree-Fock and exact diagonalizations, we unravel a very rich phase diagram controlled by the strength of both local and off-site Coulomb interactions and by the interorbital hopping anisotropy ratio $t'/t$. Three robust unconventional electronic phases, a pinball liquid, an inverse pinball liquid, and a large-unit-cell $\sqrt{12} \times \sqrt{12}$ droplet phase, are found to be generic in the triangular geometry, being controlled by the band structure parameters. The latter are also stabilized in the isotropic limit of our microscopic model, which recovers the standard SU(2) spinful extended single-band Hubbard model.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Anisotropic intrinsic spin relaxation in graphene due to flexural distortions

We propose an intrinsic spin scattering mechanism in graphene originated by the interplay of atomic spin-orbit interaction and the local curvature induced by flexural distortions of the atomic lattice. Starting from a multiorbital tight-binding Hamiltonian with spin-orbit coupling considered non-perturbatively, we derive an effective Hamiltonian for the spin scattering of the Dirac electrons due to flexural distortions. We compute the spin lifetime due to both flexural phonons and ripples and we find values in the microsecond range at room temperature. Interestingly, this mechanism is anisotropic on two counts. First, the relaxation rate is different for off-plane and in-plane spin quantization axis. Second, the spin relaxation rate depends on the angle formed by the crystal momentum with the carbon-carbon bond. In addition, the spin lifetime is also valley dependent. The proposed mechanism sets an upper limit for spin lifetimes in graphene and will be relevant when samples of high quality can be fabricated free of extrinsic sources of spin relaxation.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Electronic transport and quantum localization effects in organic semiconductors

We explore the charge transport mechanism in organic semiconductors based on a model that accounts for the thermal intermolecular disorder at work in pure crystalline compounds, as well as extrinsic sources of disorder that are present in current experimental devices. Starting from the Kubo formula, we develop a theoretical framework that relates the time-dependent quantum dynamics of electrons to the frequency-dependent conductivity. The electron mobility is then calculated through a relaxation time approximation that accounts for quantum localization corrections beyond Boltzmann theory, and allows us to efficiently address the interplay between highly conducting states in the band range and localized states induced by disorder in the band tails. The emergence of a "transient localization" phenomenon is shown to be a general feature of organic semiconductors, that is compatible with the bandlike temperature dependence of the mobility observed in pure compounds. Carrier trapping by extrinsic disorder causes a crossover to a thermally activated behavior at low temperature, which is progressively suppressed upon increasing the carrier concentration, as is commonly observed in organic field-effect transistors. Our results establish a direct connection between the localization of the electronic states and their conductive properties, formalizing phenomenological considerations that are commonly used in the literature.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Molecular fingerprints in the electronic properties of crystalline organic semiconductors: from experiment to theory

By comparing photoemission spectroscopy with a non-perturbative dynamical mean field theory extension to many-body ab initio calculations, we show in the prominent case of pentacene crystals that an excellent agreement with experiment for the bandwidth, dispersion and lifetime of the hole carrier bands can be achieved in organic semiconductors provided that one properly accounts for the coupling to molecular vibrational modes and the presence of disorder. Our findings rationalize the growing experimental evidence that even the best band structure theories based on a many-body treatment of electronic interactions cannot reproduce the experimental photoemission data in this important class of materials.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Band dispersion and electronic lifetimes in crystalline organic semiconductors

The consequences of several microscopic interactions on the photoemission spectra of crystalline organic semiconductors (OSC) are studied theoretically. It is argued that their relative roles can be disentangled by analyzing both their temperature and their momentum/energy dependence. Our analysis shows that the polaronic thermal band narrowing, that is the foundation of most theories of electrical transport in OSC, is inconsistent in the range of microscopic parameters appropriate for these materials. An alternative scenario is proposed to explain the experimental trends.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Geometrical frustration effects on charge-driven quantum phase transitions

The interplay of Coulomb repulsion and geometrical frustration on charge-driven quantum phase transitions is explored. The ground state phase diagram of an extended Hubbard model on an anisotropic triangular lattice relevant to quarter-filled layered organic materials contains homogeneous metal, 'pinball' and three-fold charge ordered metallic phases. The stability of the 'pinball' phase occurring for strong Coulomb repulsions is found to be strongly influenced by geometrical frustration. A comparison with a spinless model reproduces the transition from the homogeneous metallic phase to a pinball liquid, which indicates that the spin correlations should play a much smaller role than the charge correlations in the metallic phase close to the charge ordering transition. Spin degeneracy is, however, essential to describe the dependence of the system on geometrical frustration. Based on finite temperature Lanczos diagonalization we find that the effective Fermi temperature scale, T*, of the homogeneous metal vanishes at the quantum phase transition to the ordered metallic phase driven by the Coulomb repulsion. Above this temperature scale 'bad' metallic behavior is found which is robust against geometrical frustration in general. Quantum critical phenomena are not found whenever nesting of the Fermi surface is strong, possibly indicating a first order transition instead. 'Reentrant' behavior in the phase diagram is encountered whenever the 2kF-CDW instability competes with the Coulomb driven three-fold charge order transition. The relevance of our results to the family of quarter-filled materials: theta-(BEDT-TTF)2X is discussed.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Transient localization in crystalline organic semiconductors

A relation derived from the Kubo formula shows that optical conductivity measurements below the gap frequency in doped semiconductors can be used to probe directly the time-dependent quantum dynamics of charge carriers. This allows to extract fundamental quantities such as the elastic and inelastic scattering rates, as well as the localization length in disordered systems. When applied to crystalline organic semiconductors, an incipient electron localization caused by large dynamical lattice disorder is unveiled, implying a breakdown of semiclassical transport.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

On the interface polaron formation in organic field-effect transistors

A model describing the low density carrier state in an organic single crystal FET with high-$κ$ gate dielectrics is studied. The interplay between charge carrier coupling with inter-molecular vibrations in the bulk of the organic material and the long-range interaction induced at the interface with a polar dielectric is investigated. This interplay is responsible for the stabilization of a polaronic state with an internal structure extending on few lattice sites, at much lower coupling strengths than expected from the polar interaction alone. This effect could give rise to polaron self-trapping in high-$κ$ organic FET's without invoking unphysically large values of the carrier interface interaction.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

The importance of intra-molecular electron spin relaxation in small molecular semiconductors

Electron spin relaxation rate (eSR) is investigated on several organic semiconductors of different morphologies and molecular structures, using avoided level crossing muon spectroscopy as a local spin probe. We find that two functionalized acenes (polycrystalline tri(isopropyl)silyl-pentacene and amorphous 5,6,11,12-tetraphenyltetracene) exhibit eSRs with an Arrhenius-like temperature dependence, each with two characteristic energy scales similar to those expected from vibrations. Polycrystalline tris(8-hydroxyquinolate)gallium shows a similar behavior. The observed eSR for these molecules is no greater than 0.85 MHz at 300 K. The variety of crystal structures and transport regimes that these molecules possess, as well as the local nature of the probe, strongly suggest an intra-molecular phenomenon general to many organic semiconductors, contrasting the commonly assumed spin relaxation models based on inter-molecular charge carrier transport.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Band-like motion and mobility saturation in organic molecular semiconductors

We analyze a model that accounts for the inherently large thermal lattice fluctuations associated to the weak van der Waals inter-molecular bonding in crystalline organic semiconductors. In these materials the charge mobility generally exhibits a "metallic-like" power-law behavior, with no sign of thermally activated hopping characteristic of carrier self-localization, despite apparent mean-free-paths comparable or lower than the inter-molecular spacing. Our results show that such puzzling transport regime can be understood from the simultaneous presence of band carriers and incoherent states that are dynamically localized by the thermal lattice disorder.

0 citations0 reviewsNo code linkedOpen access
preprint2006arXiv

Tunable Frohlich Polarons in Organic Single-Crystal Transistors

In organic field effect transistors (FETs), charges move near the surface of an organic semiconductor, at the interface with a dielectric. In the past, the nature of the microscopic motion of charge carriers -that determines the device performance- has been related to the quality of the organic semiconductor. Recently, it has been appreciated that also the nearby dielectric has an unexpectedly strong influence. The mechanisms responsible for this influence are not understood. To investigate these mechanisms we have studied transport through organic single crystal FETs with different gate insulators. We find that the temperature dependence of the mobility evolves from metallic-like to insulating-like with increasing the dielectric constant of the insulator. The phenomenon is accounted for by a two-dimensional Frohlich polaron model that quantitatively describes our observations and shows that increasing the dielectric polarizability results in a crossover from the weak to the strong polaronic coupling regime.

0 citations0 reviewsNo code linkedOpen access
preprint2000arXiv

Is the Quantum Melting of a Polaron Wigner Crystal an Insulator-to-Superconductor transition ?

On examining the stability of a Wigner Crystal (WC) in an ionic dielectric, two competitive effects due to Polaron formation are found to be important: (i) the screening of the Coulomb forces which destabilizes the crystal, compensated by (ii) the increase of the carrier mass (polaron mass). The quantum melting of the Polaron Wigner Crystal (PWC) is examined. By calculating the quantum fluctuations of both the electrons and the polarization, we show that there is a competition between the dissociation of the Polarons at the insulator-to-metal transition (IMT), and a melting towards a polaron liquid. We find that at strong coupling ($α> α^*$), a liquid state of polarons cannot exist, and the IMT is driven by polaron dissociation. Next, we show that the dipolar interactions between localized polarons are responsible for a phonon instability of the PWC as the density increases. This provides a new mechanism for the IMT in doped dielectrics. Examining the sign of the dielectric constant of the PWC, we conjecture that such an instability could yield an Insulator-to-Superconductor transition.

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