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Researcher profile

S. Ciuchi

S. Ciuchi contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.str-elcond-mat.othercond-mat.stat-mechcond-mat.dis-nncond-mat.supr-connucl-th

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Published work

16 published item(s)

preprint2022arXiv

A quantum theory of the nearly frozen charge glass

We study long-range interacting electrons on the triangular lattice using mixed quantum/classical simulations going beyond the usual classical descriptions of the lattice Coulomb fluid. Our results in the strong interaction limit indicate that the emergence and proliferation of quantum defects governs the low-temperature dynamics of this strongly frustrated system, in a way that crucially depends on the degree of anisotropy of the electronic structure. The present theoretical findings explain the phenomenology observed in the $θ$-ET$_2$X charge ordering materials as they fall out of equilibrium. The approach devised here can be easily generalized to address other systems where charge frustration is lifted by quantum fluctuations.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Interplay between local response and vertex divergences in many-fermion systems with on-site attraction

We investigate the divergences appearing in the two-particle irreducible vertex functions of many-fermion systems with attractive on-site interactions. By means of dynamical mean-field theory calculations, we determine the location of singularity lines in the phase diagram of the attractive Hubbard model at half-filling, where the local Bethe-Salpeter equations are non invertible. We find that divergences appear both in the magnetic and in the density scattering channels. The former affect a sector of suppressed fluctuations and comply with the mapping of the physical susceptibilities of the repulsive case. At the same time, the appearance of singularities in the density channel of the attractive model demonstrates that vertex divergences can also plague the dominant scattering sectors associated with enhanced local susceptibilities. This constitutes a counterexample to previously proposed interpretations. Eventually, by exploiting the underlying physical symmetries and a spectral representation of the susceptibilities, we clarify the relation between vertex divergences and the local response of the system in different channels.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

On dynamical localization corrections to band transport

Bloch-Boltzmann transport theory fails to describe the carrier diffusion in current crystalline organic semiconductors, where the presence of large-amplitude thermal molecular motions causes substantial dynamical disorder. The charge transport mechanism in this original situation is now understood in terms of a transient localization of the carriers' wavefunctions, whose applicability is however limited to the strong disorder regime. In order to deal with the ever-improving performances of new materials, we develop here a unified theoretical framework that includes transient localization theory as a limiting case, and smoothly connects with the standard band description when molecular disorder is weak. The theory, which specifically adresses the emergence of dynamical localization corrections to semiclassical transport, is used to determine a "transport phase diagram" of high-mobility organic semiconductors.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Formation and observation of a quasi-two-dimensional $d_{xy}$ electron liquid in epitaxially stabilized Sr$_{2-x}$La$_{x}$TiO$_{4}$ thin films

We report the formation and observation of an electron liquid in Sr$_{2-x}$La$_{x}$TiO$_4$, the quasi-two-dimensional counterpart of SrTiO$_3$, through reactive molecular-beam epitaxy and {\it in situ} angle-resolved photoemission spectroscopy. The lowest lying states are found to be comprised of Ti 3$d_{xy}$ orbitals, analogous to the LaAlO$_3$/SrTiO$_3$ interface and exhibit unusually broad features characterized by quantized energy levels and a reduced Luttinger volume. Using model calculations, we explain these characteristics through an interplay of disorder and electron-phonon coupling acting co-operatively at similar energy scales, which provides a possible mechanism for explaining the low free carrier concentrations observed at various oxide heterostructures such as the LaAlO$_3$/SrTiO$_3$ interface.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Coupling of the A_{1g} As-phonon to magnetism in iron pnictides

Charge, spin and lattice degrees of freedom are strongly entangled in iron superconductors. A neat consequence of this entanglement is the behavior of the A_{1g} As-phonon resonance in the different polarization symmetries of Raman spectroscopy when undergoing the magneto-structural transition. In this work we show that the observed behavior could be a direct consequence of the coupling of the phonons with the electronic excitations in the anisotropic magnetic state. We discuss this scenario within a five orbital tight-binding model coupled to phonons via the dependence of the Slater-Koster parameters on the As position. We identify two qualitatively different channels of the electron-phonon interaction: a geometrical one related to the Fe-As-Fe angle and another one associated with the modification upon As displacement of the Fe-As energy integrals pdsigma and pdpi. While both mechanisms result in a finite B_{1g} response, the behavior of the phonon intensity in the A_{1g} and B_{1g} Raman polarization geometries is qualitatively different when the coupling is driven by the angle or by the energy integral dependence. We discuss our results in view of the experimental reports.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Divergent Precursors of the Mott-Hubbard Transition at the Two-Particle Level

Identifying the fingerprints of the Mott-Hubbard metal-insulator transition may be quite elusive in correlated metallic systems if the analysis is limited to the single particle level. However, our dynamical mean-field calculations demonstrate that the situation changes completely if the frequency dependence of the two-particle vertex functions is considered: The first non-perturbative precursors of the Mott physics are unambiguously identified well inside the metallic regime by the divergence of the local Bethe-Salpeter equation in the charge channel. At low temperatures this occurs in the region where incoherent high-energy features emerge in the spectral function, while at high temperatures it is traceable up to the atomic-limit.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Electronic transport and quantum localization effects in organic semiconductors

We explore the charge transport mechanism in organic semiconductors based on a model that accounts for the thermal intermolecular disorder at work in pure crystalline compounds, as well as extrinsic sources of disorder that are present in current experimental devices. Starting from the Kubo formula, we develop a theoretical framework that relates the time-dependent quantum dynamics of electrons to the frequency-dependent conductivity. The electron mobility is then calculated through a relaxation time approximation that accounts for quantum localization corrections beyond Boltzmann theory, and allows us to efficiently address the interplay between highly conducting states in the band range and localized states induced by disorder in the band tails. The emergence of a "transient localization" phenomenon is shown to be a general feature of organic semiconductors, that is compatible with the bandlike temperature dependence of the mobility observed in pure compounds. Carrier trapping by extrinsic disorder causes a crossover to a thermally activated behavior at low temperature, which is progressively suppressed upon increasing the carrier concentration, as is commonly observed in organic field-effect transistors. Our results establish a direct connection between the localization of the electronic states and their conductive properties, formalizing phenomenological considerations that are commonly used in the literature.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Molecular fingerprints in the electronic properties of crystalline organic semiconductors: from experiment to theory

By comparing photoemission spectroscopy with a non-perturbative dynamical mean field theory extension to many-body ab initio calculations, we show in the prominent case of pentacene crystals that an excellent agreement with experiment for the bandwidth, dispersion and lifetime of the hole carrier bands can be achieved in organic semiconductors provided that one properly accounts for the coupling to molecular vibrational modes and the presence of disorder. Our findings rationalize the growing experimental evidence that even the best band structure theories based on a many-body treatment of electronic interactions cannot reproduce the experimental photoemission data in this important class of materials.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Band dispersion and electronic lifetimes in crystalline organic semiconductors

The consequences of several microscopic interactions on the photoemission spectra of crystalline organic semiconductors (OSC) are studied theoretically. It is argued that their relative roles can be disentangled by analyzing both their temperature and their momentum/energy dependence. Our analysis shows that the polaronic thermal band narrowing, that is the foundation of most theories of electrical transport in OSC, is inconsistent in the range of microscopic parameters appropriate for these materials. An alternative scenario is proposed to explain the experimental trends.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Transient localization in crystalline organic semiconductors

A relation derived from the Kubo formula shows that optical conductivity measurements below the gap frequency in doped semiconductors can be used to probe directly the time-dependent quantum dynamics of charge carriers. This allows to extract fundamental quantities such as the elastic and inelastic scattering rates, as well as the localization length in disordered systems. When applied to crystalline organic semiconductors, an incipient electron localization caused by large dynamical lattice disorder is unveiled, implying a breakdown of semiclassical transport.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

On the interface polaron formation in organic field-effect transistors

A model describing the low density carrier state in an organic single crystal FET with high-$κ$ gate dielectrics is studied. The interplay between charge carrier coupling with inter-molecular vibrations in the bulk of the organic material and the long-range interaction induced at the interface with a polar dielectric is investigated. This interplay is responsible for the stabilization of a polaronic state with an internal structure extending on few lattice sites, at much lower coupling strengths than expected from the polar interaction alone. This effect could give rise to polaron self-trapping in high-$κ$ organic FET's without invoking unphysically large values of the carrier interface interaction.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Band-like motion and mobility saturation in organic molecular semiconductors

We analyze a model that accounts for the inherently large thermal lattice fluctuations associated to the weak van der Waals inter-molecular bonding in crystalline organic semiconductors. In these materials the charge mobility generally exhibits a "metallic-like" power-law behavior, with no sign of thermally activated hopping characteristic of carrier self-localization, despite apparent mean-free-paths comparable or lower than the inter-molecular spacing. Our results show that such puzzling transport regime can be understood from the simultaneous presence of band carriers and incoherent states that are dynamically localized by the thermal lattice disorder.

0 citations0 reviewsNo code linkedOpen access
preprint2006arXiv

Tunable Frohlich Polarons in Organic Single-Crystal Transistors

In organic field effect transistors (FETs), charges move near the surface of an organic semiconductor, at the interface with a dielectric. In the past, the nature of the microscopic motion of charge carriers -that determines the device performance- has been related to the quality of the organic semiconductor. Recently, it has been appreciated that also the nearby dielectric has an unexpectedly strong influence. The mechanisms responsible for this influence are not understood. To investigate these mechanisms we have studied transport through organic single crystal FETs with different gate insulators. We find that the temperature dependence of the mobility evolves from metallic-like to insulating-like with increasing the dielectric constant of the insulator. The phenomenon is accounted for by a two-dimensional Frohlich polaron model that quantitatively describes our observations and shows that increasing the dielectric polarizability results in a crossover from the weak to the strong polaronic coupling regime.

0 citations0 reviewsNo code linkedOpen access
preprint2005arXiv

Pairing and polarization in systems with retarded interactions

In a system where a boson (e.g, a phonon) of finite frequency $ω_0$ is coupled to electrons, two phenomena occur as the coupling is increased: electron pairing and polarization of the boson field. Within a path integral formalism and a Dynamical Mean-Field approach, we introduce {\it ad hoc} distribution function which allow us to pinpoint the two effects. When $ω_0$ is smaller than the bandwidth $D$, pairing and polarization occur for fairly similar couplings for all considered temperatures. When $ω_0 > D$, the two phenomena tend to coincide only for $T \gg ω_0$, but are no longer tied for low temperatures so that a state of paired particles without finite polarization is stabilized.

0 citations0 reviewsNo code linkedOpen access
preprint2000arXiv

Free energy of the Fröhlich polaron in two and three dimensions

We present a novel Path Integral Monte Carlo scheme to solve the Fröhlich polaron model. At intermediate and strong electron-phonon coupling, the polaron self-trapping is properly taken into account at the level of an effective action obtained by a preaveraging procedure with a retarded trial action. We compute the free energy at several couplings and temperatures in three and two dimensions. Our results show that the accuracy of the Feynman variational upper bound for the free energy is always better than 5% although the thermodynamics derived from it is not correct. Our estimates of the ground state energies demonstrate that the second cumulant correction to the variational upper bound predicts the self energy to better than 1% at intermediate and strong coupling.

0 citations0 reviewsNo code linkedOpen access