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S. E. Beavan

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cond-mat.mes-hall physics.optics quant-ph

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preprint2014arXiv

Locating environmental charge impurities with confluent laser spectroscopy of multiple quantum dots

We used resonant laser spectroscopy of multiple confocal InGaAs quantum dots to spatially locate charge fluctuators in the surrounding semiconductor matrix. By mapping out the resonance condition between a narrow-band laser and the neutral exciton transitions of individual dots in a field effect device, we identified spectral discontinuities as arising from charging and discharging events that take place within the volume adjacent to the quantum dots. Our analysis suggests that residual carbon dopants are a major source of charge-fluctuating traps in quantum dot heterostructures.

preprint2014arXiv

Sub-Kelvin optical thermometry of an electron reservoir coupled to a self-assembled InGaAs quantum dot

We show how resonant laser spectroscopy of the trion optical transitions in a self-assembled quantum dot can be used to determine the temperature of a nearby electron reservoir. At finite magnetic field the spin-state occupation of the Zeeman-split quantum dot electron ground states is governed by thermalization with the electron reservoir via co-tunneling. With resonant spectroscopy of the corresponding excited trion states we map out the spin occupation as a function of magnetic field to establish optical thermometry for the electron reservoir. We demonstrate the implementation of the technique in the sub-Kelvin temperature range where it is most sensitive, and where the electron temperature is not necessarily given by the cryostat base temperature.

preprint2011arXiv

Photon echo quantum memories in inhomogeneously broadened two level atoms

Here we propose a solid-state quantum memory that does not require spectral holeburning, instead using strong rephasing pulses like traditional photon echo techniques. The memory uses external broadening fields to reduce the optical depth and so switch off the collective atom-light interaction when desired. The proposed memory should allow operation with reasonable efficiency in a much broader range of material systems, for instance Er3+ doped crystals which have a transition at 1.5 um. We present analytic theory supported by numerical calculations and initial experiments.