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A. Badolato

A. Badolato appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallquant-phphysics.opticscond-mat.other

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Published work

12 published item(s)

preprint2014arXiv

Hybrid Quantum Dot-2D Electron Gas Devices for Coherent Optoelectronics

We present an inverted GaAs 2D electron gas with self-assembled InAs quantum dots in close proximity, with the goal of combining quantum transport with quantum optics experiments. We have grown and characterized several wafers -- using transport, AFM and optics -- finding narrow-linewidth optical dots and high-mobility, single subband 2D gases. Despite being buried 500 nm below the surface, the dots are clearly visible on AFM scans, allowing precise localization and paving the way towards a hybrid quantum system integrating optical dots with surface gate-defined nanostructures in the 2D gas.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Locating environmental charge impurities with confluent laser spectroscopy of multiple quantum dots

We used resonant laser spectroscopy of multiple confocal InGaAs quantum dots to spatially locate charge fluctuators in the surrounding semiconductor matrix. By mapping out the resonance condition between a narrow-band laser and the neutral exciton transitions of individual dots in a field effect device, we identified spectral discontinuities as arising from charging and discharging events that take place within the volume adjacent to the quantum dots. Our analysis suggests that residual carbon dopants are a major source of charge-fluctuating traps in quantum dot heterostructures.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

A circular dielectric grating for vertical extraction of single quantum dot emission

We demonstrate a nanostructure composed of partially etched annular trenches in a suspended GaAs membrane, designed for efficient and moderately broadband (approx. 5 nm) emission extraction from single InAs quantum dots. Simulations indicate that a dipole embedded in the nanostructure center radiates upwards into free space with a nearly Gaussian far-field, allowing a collection efficiency > 80 % with a high numerical aperture (NA=0.7) optic, and with 12X Purcell radiative rate enhancement. Fabricated devices exhibit an approx. 10 % photon collection efficiency with a NA=0.42 objective, a 20X improvement over quantum dots in unpatterned GaAs. A fourfold exciton lifetime reduction indicates moderate Purcell enhancement.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

A nanometer-scale optical electrometer

Self-assembled semiconductor quantum dots show remarkable optical and spin coherence properties, which have lead to a concerted research effort examining their potential as a quantum bit for quantum information science1-6. Here, we present an alternative application for such devices, exploiting recent achievements of charge occupation control and the spectral tunability of the optical emission of quantum dots by electric fields7 to demonstrate high-sensitivity electric field measurement. In contrast to existing nanometer-scale electric field sensors, such as single electron transistors8-11 and mechanical resonators12,13, our approach relies on homodyning light resonantly Rayleigh scattered from a quantum dot transition with the excitation laser and phase sensitive lock-in detection. This offers both static and transient field detection ability with high bandwidth operation and near unity quantum efficiency. Our theoretical estimation of the static field sensitivity for typical parameters, 0.5 V/m/ \surd Hz, compares favorably to the theoretical limit for single electron transistor-based electrometers. The sensitivity level of 5 V/m/ \surd Hz we report in this work, which corresponds to 6.4 * 10-6 e/ \surd Hz at a distance of 12 nm, is worse than this theoretical estimate, yet higher than any other result attained at 4.2 K or higher operation temperature.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Efficient quantum dot single photon extraction into an optical fiber using a nanophotonic directional coupler

We demonstrate a spectrally broadband and effcient technique for collecting photoluminescence from a single InAs quantum dot directly into a standard single mode optical fiber. In this approach, an optical fiber taper waveguide is placed in contact with a suspended GaAs nanophotonic waveguide with embedded quantum dots, forming an effcient and broadband directional coupler with standard optical fiber input and output. Effcient photoluminescence collection over a wavelength range of tens of nanometers is demonstrated, and a maximum collection effciency of 6.05 % (corresponding single photon rate of 3.0 MHz) into a single mode optical fiber was estimated for a single quantum dot exciton.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Laser spectroscopy of individual quantum dots charged with a single hole

We characterize the positively charged exciton (X1+) in single InGaAs quantum dots using resonant laser spectroscopy. Three samples with different dopant species (Be or C as acceptors, Si as a donor) are compared. The p-doped samples exhibit larger inhomogeneous broadening (x3) and smaller absorption contrast (x10) than the n-doped sample. For X1+ in the Be-doped sample, a dot dependent non-linear Fano effect is observed, demonstrating coupling to degenerate continuum states. However, for the C-doped sample the X1+ lineshape and saturation broadening follows isolated atomic transition behaviour. This C-doped device structure is useful for single hole spin initialization, manipulation, and measurement.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Probing single charge fluctuations in a semiconductor with laser spectroscopy on a quantum dot

We probe local charge fluctuations in a semiconductor via laser spectroscopy on a nearby self-assembled quantum dot. We demonstrate that the quantum dot is sensitive to changes in the local environment at the single charge level. By controlling the charge state of localized defects, we are able to infer the distance of the defects from the quantum dot with +-5 nm resolution. The results identify and quantify the main source of charge noise in the commonly-used optical field-effect devices. Based on this understanding we achieve routinely close-totransform-limited quantum dot optical linewidths.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Confluence of resonant laser excitation and bi-directional quantum dot nuclear spin polarization

Resonant laser scattering along with photon correlation measurements have established the atom-like character of quantum dots. Here, we present measurements which challenge this identification for a wide range of experimental parameters: the absorption lineshapes that we measure at magnetic fields exceeding 1 Tesla indicate that the nuclear spins polarize by an amount that ensures locking of the quantum dot resonances to the incident laser frequency. In contrast to earlier experiments, this nuclear spin polarization is bi-directional, allowing the electron+nuclear spin system to track the changes in laser frequency dynamically on both sides of the quantum dot resonance. Our measurements reveal that the confluence of the laser excitation and nuclear spin polarization suppresses the fluctuations in the resonant absorption signal. A master equation analysis shows narrowing of the nuclear Overhauser field variance, pointing to potential applications in quantum information processing.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Direct Measurement of Quantum Dot Spin Dynamics using Time-Resolved Resonance Fluorescence

We temporally resolve the resonance fluorescence from an electron spin confined to a single self-assembled quantum dot to measure directly the spin's optical initialization and natural relaxation timescales. Our measurements demonstrate that spin initialization occurs on the order of microseconds in the Faraday configuration when a laser resonantly drives the quantum dot transition. We show that the mechanism mediating the optically induced spin-flip changes from electron-nuclei interaction to hole-mixing interaction at 0.6 Tesla external magnetic field. Spin relaxation measurements result in times on the order of milliseconds and suggest that a $B^{-5}$ magnetic field dependence, due to spin-orbit coupling, is sustained all the way down to 2.2 Tesla.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Polarization memory in single Quantum Dots

We measured the polarization memory of excitonic and biexcitonic optical transitions from single quantum dots at either positive, negative or neutral charge states. Positive, negative and no circular or linear polarization memory was observed for various spectral lines, under the same quasi-resonant excitation below the wetting layer band-gap. We developed a model which explains both qualitatively and quantitatively the experimentally measured polarization spectrum for all these optical transitions. We consider quite generally the loss of spin orientation of the photogenerated electron-hole pair during their relaxation towards the many-carrier ground states. Our analysis unambiguously demonstrates that while electrons maintain their initial spin polarization to a large degree, holes completely dephase.

0 citations0 reviewsNo code linkedOpen access
preprint2005arXiv

Spin-selective optical absorption of singly charged excitons in a quantum dot

We investigate high resolution laser absorption spectroscopy of a single InGaAs/GaAs self-assembled quantum dot embedded in a field-effect structure. We show experimentally that the interband optical absorption to the lower Zeeman branch of the singly charged exciton is strongly inhibited due to spin (Pauli) blockade of the optical transition. At high magnetic fields the optical absorption to the upper Zeeman branch dominates the absorption spectrum. We find however that the spin blockade is not complete and a 10% leakage remains at high magnetic fields. Applying a gate voltage to empty the dot of its resident electron turns off the spin blockade. This effect is observed at 1.5 K and up to 9 Tesla.

0 citations0 reviewsNo code linkedOpen access