Researcher profile

A. Badolato

A. Badolato contributes to research discovery and scholarly infrastructure.

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Published work

5 published item(s)

preprint2014arXiv

Hybrid Quantum Dot-2D Electron Gas Devices for Coherent Optoelectronics

We present an inverted GaAs 2D electron gas with self-assembled InAs quantum dots in close proximity, with the goal of combining quantum transport with quantum optics experiments. We have grown and characterized several wafers -- using transport, AFM and optics -- finding narrow-linewidth optical dots and high-mobility, single subband 2D gases. Despite being buried 500 nm below the surface, the dots are clearly visible on AFM scans, allowing precise localization and paving the way towards a hybrid quantum system integrating optical dots with surface gate-defined nanostructures in the 2D gas.

preprint2011arXiv

A circular dielectric grating for vertical extraction of single quantum dot emission

We demonstrate a nanostructure composed of partially etched annular trenches in a suspended GaAs membrane, designed for efficient and moderately broadband (approx. 5 nm) emission extraction from single InAs quantum dots. Simulations indicate that a dipole embedded in the nanostructure center radiates upwards into free space with a nearly Gaussian far-field, allowing a collection efficiency > 80 % with a high numerical aperture (NA=0.7) optic, and with 12X Purcell radiative rate enhancement. Fabricated devices exhibit an approx. 10 % photon collection efficiency with a NA=0.42 objective, a 20X improvement over quantum dots in unpatterned GaAs. A fourfold exciton lifetime reduction indicates moderate Purcell enhancement.

preprint2011arXiv

A nanometer-scale optical electrometer

Self-assembled semiconductor quantum dots show remarkable optical and spin coherence properties, which have lead to a concerted research effort examining their potential as a quantum bit for quantum information science1-6. Here, we present an alternative application for such devices, exploiting recent achievements of charge occupation control and the spectral tunability of the optical emission of quantum dots by electric fields7 to demonstrate high-sensitivity electric field measurement. In contrast to existing nanometer-scale electric field sensors, such as single electron transistors8-11 and mechanical resonators12,13, our approach relies on homodyning light resonantly Rayleigh scattered from a quantum dot transition with the excitation laser and phase sensitive lock-in detection. This offers both static and transient field detection ability with high bandwidth operation and near unity quantum efficiency. Our theoretical estimation of the static field sensitivity for typical parameters, 0.5 V/m/ \surd Hz, compares favorably to the theoretical limit for single electron transistor-based electrometers. The sensitivity level of 5 V/m/ \surd Hz we report in this work, which corresponds to 6.4 * 10-6 e/ \surd Hz at a distance of 12 nm, is worse than this theoretical estimate, yet higher than any other result attained at 4.2 K or higher operation temperature.

preprint2009arXiv

Direct Measurement of Quantum Dot Spin Dynamics using Time-Resolved Resonance Fluorescence

We temporally resolve the resonance fluorescence from an electron spin confined to a single self-assembled quantum dot to measure directly the spin's optical initialization and natural relaxation timescales. Our measurements demonstrate that spin initialization occurs on the order of microseconds in the Faraday configuration when a laser resonantly drives the quantum dot transition. We show that the mechanism mediating the optically induced spin-flip changes from electron-nuclei interaction to hole-mixing interaction at 0.6 Tesla external magnetic field. Spin relaxation measurements result in times on the order of milliseconds and suggest that a $B^{-5}$ magnetic field dependence, due to spin-orbit coupling, is sustained all the way down to 2.2 Tesla.

preprint2009arXiv

Polarization memory in single Quantum Dots

We measured the polarization memory of excitonic and biexcitonic optical transitions from single quantum dots at either positive, negative or neutral charge states. Positive, negative and no circular or linear polarization memory was observed for various spectral lines, under the same quasi-resonant excitation below the wetting layer band-gap. We developed a model which explains both qualitatively and quantitatively the experimentally measured polarization spectrum for all these optical transitions. We consider quite generally the loss of spin orientation of the photogenerated electron-hole pair during their relaxation towards the many-carrier ground states. Our analysis unambiguously demonstrates that while electrons maintain their initial spin polarization to a large degree, holes completely dephase.