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S. D. Harrington

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Published work

3 published item(s)

preprint2021arXiv

Realizing topologically ordered states on a quantum processor

The discovery of topological order has revolutionized the understanding of quantum matter in modern physics and provided the theoretical foundation for many quantum error correcting codes. Realizing topologically ordered states has proven to be extremely challenging in both condensed matter and synthetic quantum systems. Here, we prepare the ground state of the toric code Hamiltonian using an efficient quantum circuit on a superconducting quantum processor. We measure a topological entanglement entropy near the expected value of $\ln2$, and simulate anyon interferometry to extract the braiding statistics of the emergent excitations. Furthermore, we investigate key aspects of the surface code, including logical state injection and the decay of the non-local order parameter. Our results demonstrate the potential for quantum processors to provide key insights into topological quantum matter and quantum error correction.

preprint2015arXiv

Observation of a topologically non-trivial surface state in half-Heusler PtLuSb (001) thin films

The discovery of topological insulators (TIs), materials with bulk band gaps and protected cross-gap surface states, in compounds such as Bi2Se3 has generated much interest in identifying topological surface states (TSSs) in other classes of materials. In particular, recent theory calculations suggest that TSSs may be found in half-Heusler ternary compounds. If experimentally realizable, this would provide a materials platform for entirely new heterostructure spintronic devices that make use of the structurally-identical but electronically-varied nature of Heusler compounds. Here, we show the presence of a TSS in epitaxially grown thin films of the half-Heusler compound PtLuSb. Spin and angle-resolved photoemission spectroscopy (ARPES), complemented by theoretical calculations, reveals a surface state with linear dispersion and a helical tangential spin texture consistent with previous predictions. This experimental verification of TI behavior is a significant step forward in establishing half-Heusler compounds as a viable material system for future spintronics devices.

preprint2015arXiv

Surface reconstructions and transport of epitaxial PtLuSb (001) thin films grown by MBE

This work presents the surface reconstructions and transport properties of the topological insulator PtLuSb grown on Al0.1In0.9Sb/GaAs (001). Two stable surface reconstructions, (1x3) and c(2x2), were observed on PtLuSb (001) surfaces. Antimony-dimerization was determined to be the nature of the (1x3) surface reconstruction as evidenced by chemical binding energy shifts in the antimony 4d core-level for surface bonding components. The two surface reconstructions were studied as a function of Sb4 overpressure and substrate temperature to create a reconstruction phase diagram. From this reconstruction phase diagram, a growth window from 320 °C to 380 °C using an antimony overpressure was identified. Within this window, the highest quality films were grown at a growth temperature of 380 °C. These films exhibited lower p-type carrier concentrations as well as relatively high hole mobilities.