BZPEERPapers, people, evidence and research paths
Menu

Discover

SearchFind papers, people, topics, institutions and opportunities from one place.GraphSee how papers, authors, topics and evidence connect.

Research tools

HomeContinue from the papers, people and topics that matter now.CollectionsTurn saved papers into reading lists, evidence maps and shareable context.ResearchReconstruct the path that led you from search to paper to question.CollaborationMove from a paper, topic or expert request into a focused thread.PublishCreate full-text research articles with metadata, formulas and versions.

Network

ExpertsFind specialists whose work and reviews explain why they can help.CommunitiesJoin research groups organized around papers, topics and shared evidence.

Opportunities

ListingsBrowse roles, calls and collaborations connected to real research context.

Account

Log inReturn to your saved papers, graph views and active threads.Create accountStart saving papers, building a research trail and joining teams.
Log inCreate account

Source author record

C. J. Palmstrøm

C. J. Palmstrøm appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record
cond-mat.mes-hallcond-mat.mtrl-scicond-mat.supr-concond-mat.dis-nncond-mat.str-elquant-ph

Catalog footprint

What is connected

11works
6topics
4close collaborators

Actions

Connect this record

Log in to claim
Open graphBrowse works

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

11 published item(s)

preprint2019arXiv

Conductance-matrix symmetries of a three-terminal hybrid device

We present conductance-matrix measurements of a three-terminal superconductor-semiconductor hybrid device consisting of two normal leads and one superconducting lead. Using a symmetry decomposition of the conductance, we find that the antisymmetric components of pairs of local and nonlocal conductances match at energies below the superconducting gap, consistent with expectations based on a non-interacting scattering matrix approach. Further, the local charge character of Andreev bound states is extracted from the symmetry-decomposed conductance data and is found to be similar at both ends of the device and tunable with gate voltage. Finally, we measure the conductance matrix as a function of magnetic field and identify correlated splittings in low-energy features, demonstrating how conductance-matrix measurements can complement traditional tunneling-probe measurements in the search for Majorana zero modes.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

On the limits to mobility in InAs quantum wells with nearly lattice-matched barriers

The growth and the density dependence of the low temperature mobility of a series of two-dimensional electron systems confined to un-intentionally doped, low extended defect density InAs quantum wells with Al$_{1-x}$Ga$_{x}$Sb barriers are reported. The electron mobility limiting scattering mechanisms were determined by utilizing dual-gated devices to study the dependence of mobility on carrier density and electric field independently. Analysis of the possible scattering mechanisms indicate the mobility was limited primarily by rough interfaces in narrow quantum wells and a combination of alloy disorder and interface roughness in wide wells at high carrier density within the first occupied electronic sub-band. At low carrier density the functional dependence of the mobility on carrier density provided evidence of coulombic scattering from charged defects. A gate-tuned electron mobility exceeding 750,000 cm$^{2}$/Vs was achieved at a sample temperature of 2 K.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Anisotropic spin relaxation in $n$-GaAs from strong inhomogeneous hyperfine fields produced by the dynamical polarization of nuclei

The hyperfine field from dynamically polarized nuclei in n-GaAs is very spatially inhomogeneous, as the nu- clear polarization process is most efficient near the randomly-distributed donors. Electrons with polarized spins traversing the bulk semiconductor will experience this inhomogeneous hyperfine field as an effective fluctuating spin precession rate, and thus the spin polarization of an electron ensemble will relax. A theory of spin relaxation based on the theory of random walks is applied to such an ensemble precessing in an oblique magnetic field, and the precise form of the (unequal) longitudinal and transverse spin relaxation analytically derived. To investigate this mechanism, electrical three-terminal Hanle measurements were performed on epitaxially grown Co$_2$MnSi/$n$-GaAs heterostructures fabricated into electrical spin injection devices. The proposed anisotropic spin relaxation mechanism is required to satisfactorily describe the Hanle lineshapes when the applied field is oriented at large oblique angles.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Observation of a topologically non-trivial surface state in half-Heusler PtLuSb (001) thin films

The discovery of topological insulators (TIs), materials with bulk band gaps and protected cross-gap surface states, in compounds such as Bi2Se3 has generated much interest in identifying topological surface states (TSSs) in other classes of materials. In particular, recent theory calculations suggest that TSSs may be found in half-Heusler ternary compounds. If experimentally realizable, this would provide a materials platform for entirely new heterostructure spintronic devices that make use of the structurally-identical but electronically-varied nature of Heusler compounds. Here, we show the presence of a TSS in epitaxially grown thin films of the half-Heusler compound PtLuSb. Spin and angle-resolved photoemission spectroscopy (ARPES), complemented by theoretical calculations, reveals a surface state with linear dispersion and a helical tangential spin texture consistent with previous predictions. This experimental verification of TI behavior is a significant step forward in establishing half-Heusler compounds as a viable material system for future spintronics devices.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Surface reconstructions and transport of epitaxial PtLuSb (001) thin films grown by MBE

This work presents the surface reconstructions and transport properties of the topological insulator PtLuSb grown on Al0.1In0.9Sb/GaAs (001). Two stable surface reconstructions, (1x3) and c(2x2), were observed on PtLuSb (001) surfaces. Antimony-dimerization was determined to be the nature of the (1x3) surface reconstruction as evidenced by chemical binding energy shifts in the antimony 4d core-level for surface bonding components. The two surface reconstructions were studied as a function of Sb4 overpressure and substrate temperature to create a reconstruction phase diagram. From this reconstruction phase diagram, a growth window from 320 °C to 380 °C using an antimony overpressure was identified. Within this window, the highest quality films were grown at a growth temperature of 380 °C. These films exhibited lower p-type carrier concentrations as well as relatively high hole mobilities.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Two-dimensional epitaxial superconductor-semiconductor heterostructures: A platform for topological superconducting networks

Progress in the emergent field of topological superconductivity relies on synthesis of new material combinations, combining superconductivity, low density, and spin-orbit coupling (SOC). For example, theory [1-4] indicates that the interface between a one-dimensional (1D) semiconductor (Sm) with strong SOC and a superconductor (S) hosts Majorana modes with nontrivial topological properties [5-8]. Recently, epitaxial growth of Al on InAs nanowires was shown to yield a high quality S-Sm system with uniformly transparent interfaces [9] and a hard induced gap, indicted by strongly suppressed sub gap tunneling conductance [10]. Here we report the realization of a two-dimensional (2D) InAs/InGaAs heterostructure with epitaxial Al, yielding a planar S-Sm system with structural and transport characteristics as good as the epitaxial wires. The realization of 2D epitaxial S-Sm systems represent a significant advance over wires, allowing extended networks via top-down processing. Among numerous potential applications, this new material system can serve as a platform for complex networks of topological superconductors with gate-controlled Majorana zero modes [1-4]. We demonstrate gateable Josephson junctions and a highly transparent 2D S-Sm interface based on the product of excess current and normal state resistance.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

An apparent metal insulator transition in high mobility 2D InAs heterostructures

We report on the first experimental observation of an apparent metal insulator transition in a 2D electron gas confined in an InAs quantum well. At high densities we find that the carrier mobility is limited by background charged impurities and the temperature dependence of the resistivity shows a metallic behavior with resistivity increasing with increasing temperature. At low densities we find an insulating behavior below a critical density of $n_{c} = 5 \times 10^{10}$ cm$^{-2}$ with the resistivity decreasing with increasing temperature. We analyze this transition using a percolation model arising from the failure of screening in random background charged impurities. We also examine the percolation transition experimentally by introducing remote ionized impurities at the surface. Using a bias during cool-down, we modify the screening charge at the surface which strongly affects the critical density. Our study shows that transition from a metallic to an insulating phase in our system is due to percolation transition.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Gating of high-mobility InAs metamorphic heterostructures

We investigate the performance of gate-defined devices fabricated on high mobility InAs metamorphic heterostructures. We find that heterostructures capped with In$_{0.75}$Ga$_{0.25}$As often show signs of parallel conduction due to proximity of their surface Fermi level to the conduction band minimum. Here, we introduce a technique that can be used to estimate the density of this surface charge that involves cool-downs from room temperature under gate bias. We have been able to remove the parallel conduction under high positive bias, but achieving full depletion has proven difficult. We find that by using In$_{0.75}$Al$_{0.25}$As as the barrier without an In$_{0.75}$Ga$_{0.25}$As capping, a drastic reduction in parallel conduction can be achieved. Our studies show that this does not change the transport properties of the quantum well significantly. We achieved full depletion in InAlAs capped heterostructures with non-hysteretic gating response suitable for fabrication of gate-defined mesoscopic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Tuning spin orbit interaction in high quality gate-defined InAs one-dimensional channels

Spin-orbit coupling in solids describes an interaction between an electron's spin, an internal quantum-mechanical degree of freedom, with its linear momentum, an external property. Spin-orbit interaction, due to its relativistic nature, is typically small in solids, and is often taken into account perturbatively. It has been recently realized, however, that materials with strong spin-orbit coupling can lead to novel states of matter such as topological insulators and superconductors. This exciting development might lead to a number of useful applications ranging from spintronics to quantum computing. In particular, theory predicts that narrow band gap semiconductors with strong spin-obit coupling are a suitable platform for the realization of Majorana zero-energy modes, predicted to obey exotic non-Abelian braiding statistics. The pursuit for realizing Majorana modes in condensed matter systems and investigating their exotic properties has been a subject of intensive experimental research recently. Here, we demonstrate the first realization of gate-defined wires where one-dimensional confinement is created using electrostatic potentials, on large area InAs two dimensional electron systems (2DESs). The electronic properties of the parent 2DES are fully characterized in the region that wires are formed. The strength of the spin-orbit interaction has been measured and tuned while the high mobility of the 2DES is maintained in the wire. We show that this scheme could provide new prospective solutions for scalable and complex wire networks.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Planar Superconducting Resonators with Internal Quality Factors above One Million

We describe the fabrication and measurement of microwave coplanar waveguide resonators with internal quality factors above 10 million at high microwave powers and over 1 million at low powers, with the best low power results approaching 2 million, corresponding to ~1 photon in the resonator. These quality factors are achieved by controllably producing very smooth and clean interfaces between the resonators' aluminum metallization and the underlying single crystal sapphire substrate. Additionally, we describe a method for analyzing the resonator microwave response, with which we can directly determine the internal quality factor and frequency of a resonator embedded in an imperfect measurement circuit.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Hyperfine Interactions and Spin Transport in Ferromagnet-Semiconductor Heterostructures

Measurements and modeling of electron spin transport and dynamics are used to characterize hyperfine interactions in Fe/GaAs devices with $n$-GaAs channels. Ga and As nuclei are polarized by electrically injected electron spins, and the nuclear polarization is detected indirectly through the depolarization of electron spins in the hyperfine field. The dependence of the electron spin signal on injector bias and applied field direction is modeled by a coupled drift-diffusion equation, including effective fields from both the electronic and nuclear polarizations. This approach is used to determine the electron spin polarization independently of the assumptions made in standard transport measurements. The extreme sensitivity of the electron spin dynamics to the nuclear spin polarization also facilitates the electrical detection of nuclear magnetic resonance.

0 citations0 reviewsNo code linkedOpen access