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Researcher profile

S. C. Chae

S. C. Chae contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-sci

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Published work

5 published item(s)

preprint2013arXiv

Evolution of the domain topology in a ferroelectric

Topological materials, including topological insulators, magnets with Skyrmions and ferroelectrics with topological vortices, have recently attracted phenomenal attention in the materials science community. Complex patterns of ferroelectric domains in hexagonal REMnO3 (RE: rare earths) turn out to be associated with the macroscopic emergence of Z2xZ3 symmetry. The results of our depth profiling of crystals with a self-poling tendency near surfaces reveal that the partial dislocation (i.e., wall-wall) interaction, not the interaction between vortices and antivortices, is primarily responsible for topological condensation through the macroscopic breaking of the Z2-symmetry.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Direct observation of the proliferation of ferroelectric loop domains and vortex-antivortex pairs

We discovered "stripe" patterns of trimerization-ferroelectric domains in hexagonal REMnO3 (RE=Ho, ---, Lu) crystals (grown below ferroelectric transition temperatures (Tc), reaching up to 1435 oC), in contrast with the vortex patterns in YMnO3. These stripe patterns roughen with the appearance of numerous loop domains through thermal annealing just below Tc, but the stripe domain patterns turn to vortex-antivortex domain patterns through a freezing process when crystals cross Tc even though the phase transition appears not to be Kosterlitz-Thouless-type. The experimental systematics are compared with the results of our six-state clock model simulation and also the Kibble-Zurek Mechanism for trapped topological defects.

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preprint2009arXiv

Large 1/f noise of unipolar resistance switching and its percolating nature

We investigated the 1/f noise of Pt/NiO/Pt capacitors that show unipolar resistance switching. When they were switched from the low to high resistance states, the power spectral density of the voltage fluctuation was increased by approximately five orders of magnitude. At 100 K, the relative resistance fluctuation, SR/R2, in the low resistance state displayed a power law dependence on the resistance R with exponent w = 1.6. This behavior can be explained by percolation theory; however, at higher temperatures or near the switching voltage, SR/R2 becomes enhanced further. This large 1/f noise can be therefore an important problem in the development of resistance random access memory devices.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Predictability of reset switching voltages in unipolar resistance switching

In unipolar resistance switching of NiO capacitors, Joule heating in the conducting channels should cause a strong nonlinearity in the low resistance state current-voltage (I-V) curves. Due to the percolating nature of the conducting channels, the reset current IR, can be scaled to the nonlinear coefficient Bo of the I-V curves. This scaling relationship can be used to predict reset voltages, independent of NiO capacitor size; it can also be applied to TiO2 and FeOy capacitors. Using this relation, we developed an error correction scheme to provide a clear window for separating reset and set voltages in memory operations.

0 citations0 reviewsNo code linkedOpen access
preprint2006arXiv

Magnetoelectric effects of nanoparticulate Pb(Zr0.52Ti0.48)O3-NiFe2O4 composite films

We fabricated Pb(Zr0.52Ti0.48)O3-NiFe2O4 composite films consisting of randomly dispersed NiFe2O4 nanoparticles in the Pb(Zr0.52Ti0.48)O3 matrix. The structural analysis revealed that the crystal axes of the NiFe2O4 nanoparticles are aligned with those of the ferroelectric matrix. The composite has good ferroelectric and magnetic properties. We measured the transverse and longitudinal components of the magnetoelectric voltage coefficient, which supports the postulate that the magnetoelectric effect comes from direct stress coupling between magnetostrictive NiFe2O4 and piezoelectric Pb(Zr0.52Ti0.48)O3 grains.

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