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Researcher profile

S. Barisic

S. Barisic contributes to research discovery and scholarly infrastructure.

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Published work

4 published item(s)

preprint2013arXiv

Quantum transport equations for low-dimensional multiband electronic systems. I

A systematic method of calculating the dynamical conductivity tensor in a general multiband electronic model with strong boson-mediated electron-electron interactions is described. The theory is based on the exact semiclassical expression for the coupling between valence electrons and electromagnetic fields and on the self-consistent Bethe--Salpeter equations for the electron-hole propagators. The general diagrammatic perturbation expressions for the intraband and interband single-particle conductivity are determined. The relations between the intraband Bethe--Salpeter equation, the quantum transport equation and the ordinary transport equation are briefly discussed within the memory-function approximation. The effects of the Lorentz dipole-dipole interactions on the dynamical conductivity of low-dimensional $sp_α$ models are described in the same approximation. Such formalism proves useful in studies of different (pseudo)gapped states of quasi-one-dimensional systems with the metal-to-insulator phase transitions and can be easily extended to underdoped two-dimensional high-$T_c$ superconductors.

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preprint1995arXiv

Raman spectrum and charge fluctuations in the copper-oxide superconductors

The effect of the charge fluctuations on the electronic spectrum and the Raman spectrum of high temperature superconductors is examined within the slave boson approach. Instead of using the saddle point approximation for slave bosons, we confine ourselves to the non-crossing approximation (NCA) in summing the diagrams for the Green functions, thus obtaining the renormalized hole spectrum and its lifetime on equal footing. The electronic Raman spectrum is calculated, showing the characteristic featureless behaviour up to the frequency of the order of renormalized $Δ_{pd}$ parameter. The dependence on the polarization of the incident and the scattered light agrees with experiments.

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preprint1995arXiv

The effect of large $U_d$ on the Raman spectrum in the copper-oxide superconductors

The effect of the charge fluctuations on the electronic and Raman spectrum of high temperature superconductors is examined, using the slave boson approach to the large Coulomb repulsion $U_d$ on the copper site. Instead of the saddle point approximation $\srv{b}\ne 0$ for the slave boson, characteristic for various $N\ide\infty$ approaches, we confine ourselves to the non-crossing approximation (NCA) diagrams for the Green functions. In this way the effects of charge fluctuations and of the constraint of no double occupancy on the copper site on the shape of the electronic spectrum are studied primarily, while the slave boson diagrams responsible for copper-copper spin correlations are intentionally not included. The novel feature of the charge fluctuation dynamics shows up in the slave boson spectrum as the plateau extending over the range of 1eV below $ω=0$. This is further reflected in the electronic Raman spectrum that we calculate for various combinations of the polarization of the incoming and scattered light. The Raman spectrum shows the characteristic featureless behaviour up to frequencies of the order of 1eV while the polarization dependence is also in qualitative agreement with experiment.

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preprint1995arXiv

THE TIGHT-BINDING APPROACH TO THE DIELECTRIC RESPONSE IN THE MULTIBAND SYSTEMS

Starting from the random phase approximation for the weakly coupled multiband tightly-bounded electron systems, we calculate the dielectric matrix in terms of intraband and interband transitions. The advantages of this representation with respect to the usual plane-wave decomposition are pointed out. The analysis becomes particularly transparent in the long wavelength limit, after performing the multipole expansion of bare Coulomb matrix elements. For illustration, the collective modes and the macroscopic dielectric function for a general cubic lattice are derived. It is shown that the dielectric instability in conducting narrow band systems proceeds by a common softening of one transverse and one longitudinal mode. Furthermore, the self-polarization corrections which appear in the macroscopic dielectric function for finite band systems, are identified as a combined effect of intra-atomic exchange interactions between electrons sitting in different orbitals and a finite inter-atomic tunneling.

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